IRF7105TRPBF vs IRF7105PBF Comparação

Comparação detalhada lado a lado de IRF7105TRPBF por Infineon e IRF7105PBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro IRF7105TRPBF IRF7105PBF
Marca Infineon Infineon
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,30 $0,61
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Series IRF7105 (HEXFET Fifth Generation) —
Polarity / Configuration N-Channel + P-Channel, dual MOSFET in one package —
Drain-to-Source Voltage (Vds) 25 V —
Continuous Drain Current - N-channel (Id, N-ch) 3.5 A —
Continuous Drain Current - P-channel (Id, P-ch) 2.3 A —
Rds(on) Maximum 100 mOhm —
Technology HEXFET (IR MOSFET, fifth generation) HEXFET (Fifth Generation)
Encapsulamento 8-SO (SOIC-8) —
Total Package Power Dissipation (Pd) 2 W —
Tipo de montagem Surface Mount Surface Mount
Faixa de temperatura de operação [DATA_NEEDED: junction temperature range] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Packaging Form Tape & Reel (TR) —
Lead-Free / RoHS Status Pb-free (PBF suffix), RoHS compliant —
Contagem de pinos 8 8
Part Number — IRF7105PBF
FET Type — N-Channel and P-Channel (Dual, Complementary)
N-Channel VDS (Drain-Source Voltage) — 25 V
P-Channel VDS (Drain-Source Voltage) — 25 V
N-Channel Continuous Drain Current (ID) — 3.5 A
P-Channel Continuous Drain Current (ID) — 2.3 A
Total Package Power Dissipation (PD) — 2 W
Encapsulamento / Caixa — 8-SOIC (SO-8)
Lead-Free / Halogen-Free — Yes / Yes
RoHS Compliance — Compliant
MSL (Moisture Sensitivity Level) — MSL1
Qualification — Industrial
Soldering Compatibility — Vapor Phase, Infrared, Wave
dv/dt Rating — Dynamic (rated per datasheet)

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