IRF7351TRPBF vs IRF7306TRPBF Comparação

Comparação detalhada lado a lado de IRF7351TRPBF por Infineon e IRF7306TRPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro IRF7351TRPBF IRF7306TRPBF
Marca Infineon Infineon
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,68 $0,55
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7351TRPBF —
Configuration Dual N-Channel MOSFET (Half-Bridge) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 8 A -3.6 A at 25°C
On-Resistance RDS(on) max 17.8 mOhm 100 mOhm at VGS = -10 V
On-Resistance RDS(on) typ (per digchips) 0.0137 ohm (13.7 mOhm) —
Total Gate Charge (Qg) 24 nC —
Power Dissipation (PD) 2 W —
Technology IR MOSFET (HEXFET trench) HEXFET Power MOSFET (Generation V)
Encapsulamento 8-SO (SO-8 / SOIC-8) Surface Mount 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width)
Tipo de montagem Surface Mount Surface Mount
Temperatura de operação -55C to +150C (junction) —
Typical Application Synchronous Rectifier for Isolated DC-DC Converters —
Status RoHS Compliant (PBF suffix = lead-free) —
Lead-Free Yes —
Nível MSL [DATA_NEEDED: MSL Level] 1 (per JEDEC J-STD-020)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
Polarity — P-Channel (dual)
Number of Channels — 2 (independent, in single package)
Drain-to-Source Voltage (VDS) — -30 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg total]
Maximum Power Dissipation — 2 W at TA = 25°C
Faixa de temperatura de operação — -55°C to +150°C (junction)
Packaging — Tape & Reel (TR)
RoHS Compliance — Yes (PBF suffix indicates Pb-free)
Qualification — Consumer market qualification standards (per IR/Infineon datasheet)
Avalanche Rated — Yes (ruggedized device per datasheet)

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