IRF7351TRPBF vs IRF7306TRPBF 비교

다음의 상세 나란히 비교: IRF7351TRPBF 제조: Infineon 및 IRF7306TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7351TRPBF IRF7306TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.68 $0.55
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7351TRPBF —
Configuration Dual N-Channel MOSFET (Half-Bridge) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 8 A -3.6 A at 25°C
On-Resistance RDS(on) max 17.8 mOhm 100 mOhm at VGS = -10 V
On-Resistance RDS(on) typ (per digchips) 0.0137 ohm (13.7 mOhm) —
Total Gate Charge (Qg) 24 nC —
Power Dissipation (PD) 2 W —
Technology IR MOSFET (HEXFET trench) HEXFET Power MOSFET (Generation V)
패키지 8-SO (SO-8 / SOIC-8) Surface Mount 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width)
실장 유형 Surface Mount Surface Mount
동작 온도 -55C to +150C (junction) —
Typical Application Synchronous Rectifier for Isolated DC-DC Converters —
RoHS 상태 Compliant (PBF suffix = lead-free) —
Lead-Free Yes —
MSL 레벨 [DATA_NEEDED: MSL Level] 1 (per JEDEC J-STD-020)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
Polarity — P-Channel (dual)
Number of Channels — 2 (independent, in single package)
Drain-to-Source Voltage (VDS) — -30 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg total]
Maximum Power Dissipation — 2 W at TA = 25°C
동작 온도 범위 — -55°C to +150°C (junction)
Packaging — Tape & Reel (TR)
RoHS Compliance — Yes (PBF suffix indicates Pb-free)
Qualification — Consumer market qualification standards (per IR/Infineon datasheet)
Avalanche Rated — Yes (ruggedized device per datasheet)

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