IRFB4127PBF vs IRFB3207ZPBF Comparação

Comparação detalhada lado a lado de IRFB4127PBF por Infineon e IRFB3207ZPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro IRFB4127PBF IRFB3207ZPBF
Marca Infineon Infineon
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $1,68 $1,62
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRFB4127PBF IRFB3207ZPBF
Technology TrenchFET Gen 6 (HEXFET) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Channel Type N-Channel —
Drain-Source Voltage (Vdss) 200 V —
Continuous Drain Current (Id) at Tc 76 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (Vgs) max ±20 V —
Drain-Source On-Resistance (Rds(on)) max 20 mOhm —
Total Gate Charge (Qg) 100 nC —
Power Dissipation (Pd) at Tc 375 W —
Temperatura de junção de operação -55C to +175C -55 C to +175 C
Encapsulamento / Caixa TO-220AB (through-hole) —
Tipo de montagem Through Hole Through Hole
Status RoHS Lead-Free (PBF suffix indicates RoHS compliance) —
Configuration Single —
Series — HEXFET
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Encapsulamento — TO-220AB (3-lead through-hole)
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Nível MSL — N/A (through-hole)
Avalanche Rated — Yes (improved Z-variant ruggedness)

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