IRFB4127PBF vs IRFB3207ZPBF Comparison

Detailed side-by-side comparison of IRFB4127PBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB4127PBF IRFB3207ZPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.68 $1.62
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRFB4127PBF IRFB3207ZPBF
Technology TrenchFET Gen 6 (HEXFET) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Channel Type N-Channel β€”
Drain-Source Voltage (Vdss) 200 V β€”
Continuous Drain Current (Id) at Tc 76 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Gate-Source Voltage (Vgs) max Β±20 V β€”
Drain-Source On-Resistance (Rds(on)) max 20 mOhm β€”
Total Gate Charge (Qg) 100 nC β€”
Power Dissipation (Pd) at Tc 375 W β€”
Operating Junction Temperature -55C to +175C -55 C to +175 C
Package / Case TO-220AB (through-hole) β€”
Mounting Type Through Hole Through Hole
RoHS Status Lead-Free (PBF suffix indicates RoHS compliance) β€”
Configuration Single β€”
Series β€” HEXFET
Drain-Source Voltage (VDS) β€” 75 V
Continuous Drain Current (ID) at TC=25C β€” 120 A
Silicon-Limited Drain Current β€” 170 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V β€” 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V β€” 4.1 mOhm
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg β€” [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C β€” 300 W
Package β€” TO-220AB (3-lead through-hole)
Lead-Free / RoHS β€” Yes (PBF suffix = lead-free)
MSL Level β€” N/A (through-hole)
Avalanche Rated β€” Yes (improved Z-variant ruggedness)

Datasheets & Resources

Browse All Products Create BOM Request Quote