IRFB4310PBF vs IRFS7440TRLPBF Comparação

Comparação detalhada lado a lado de IRFB4310PBF por Infineon e IRFS7440TRLPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro IRFB4310PBF IRFS7440TRLPBF
Marca Infineon Infineon
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $1,95 $0,98
Tipo de transistor N-Channel MOSFET —
Technology HEXFET (IR MOSFET) MOSFET (Metal Oxide Semiconductor)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc=25C 130 A 120 A
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissition (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max at VGS=10V 7 mOhm —
On-Resistance RDS(on) typical at VGS=10V 5.6 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] —
Total Gate Charge (Qg) 170 nC 90 nC (typical)
Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Faixa de temperatura de operação -55C to +175C (junction) [DATA_NEEDED: junction temperature range]
Encapsulamento TO-220AB (through-hole) TO-263 (D2PAK), surface mount
Tipo de montagem Through Hole Surface Mount
Avalanche Rated Yes —
Status RoHS Compliant Compliant (lead-free)
Lead-Free Yes (Pb-free PBF suffix) —
Manufacturer — Infineon Technologies
Series — StrongIRFET
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 40 V
Power Dissipation (PD) at Tc=25C — 208 W
On-Resistance (RDS(on)) max at VGS=10V — 2.5 mOhm
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Drive Voltage (optimized) — 10 V (normal level)
Operating Frequency Range (optimized) — <100 kHz
Qualification — JEDEC standard

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