IRFS7440TRLPBF vs IRFB4310PBF Comparação

Comparação detalhada lado a lado de IRFS7440TRLPBF por Infineon e IRFB4310PBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro IRFS7440TRLPBF IRFB4310PBF
Marca Infineon Infineon
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,98 $1,95
Manufacturer Infineon Technologies —
Series StrongIRFET —
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Tc=25C 120 A 130 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Tc=25C 208 W —
On-Resistance (RDS(on)) max at VGS=10V 2.5 mOhm —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 90 nC (typical) 170 nC
Gate Drive Voltage (optimized) 10 V (normal level) —
Operating Frequency Range (optimized) <100 kHz —
Encapsulamento TO-263 (D2PAK), surface mount TO-220AB (through-hole)
Tipo de montagem Surface Mount Through Hole
Faixa de temperatura de operação [DATA_NEEDED: junction temperature range] -55C to +175C (junction)
Status RoHS Compliant (lead-free) Compliant
Qualification JEDEC standard —
Tipo de transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Maximum Power Dissition (PD) at Tc=25C — 300 W
On-Resistance RDS(on) max at VGS=10V — 7 mOhm
On-Resistance RDS(on) typical at VGS=10V — 5.6 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS maximum rating]
Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Avalanche Rated — Yes
Lead-Free — Yes (Pb-free PBF suffix)

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