IRFS7440TRLPBF vs IRFB4310PBF 对比

详细并排对比 IRFS7440TRLPBF 出自 Infineon 和 IRFB4310PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFS7440TRLPBF IRFS7440TRLPBF - 40V 120A StrongIRFET N-MOSFET | Infineon

IRFS7440TRLPBF - 40V 120A StrongIRFET N-MOSFET | Infineon

IRFS7440TRLPBF ✓ 量产中

规格对比

参数 IRFS7440TRLPBF IRFB4310PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.98 $1.95
Manufacturer Infineon Technologies —
Series StrongIRFET —
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Tc=25C 120 A 130 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Tc=25C 208 W —
On-Resistance (RDS(on)) max at VGS=10V 2.5 mOhm —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 90 nC (typical) 170 nC
Gate Drive Voltage (optimized) 10 V (normal level) —
Operating Frequency Range (optimized) <100 kHz —
封装 TO-263 (D2PAK), surface mount TO-220AB (through-hole)
安装类型 Surface Mount Through Hole
工作温度范围 [DATA_NEEDED: junction temperature range] -55C to +175C (junction)
RoHS 状态 Compliant (lead-free) Compliant
Qualification JEDEC standard —
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Maximum Power Dissition (PD) at Tc=25C — 300 W
On-Resistance RDS(on) max at VGS=10V — 7 mOhm
On-Resistance RDS(on) typical at VGS=10V — 5.6 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS maximum rating]
Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Avalanche Rated — Yes
Lead-Free — Yes (Pb-free PBF suffix)

数据手册与资源

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