IRLB8748PBF vs IRFB4110PBF Comparação
Comparação detalhada lado a lado de IRLB8748PBF por Infineon e IRFB4110PBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRLB8748PBF | IRFB4110PBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,68 | $1,55 |
| Drain-Source Voltage (VDS) | 30 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 92 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.8 mOhm | 4.5 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 15 nC typical | — |
| Power Dissipation (PD) at TC=25C | 75 W | — |
| Faixa de temperatura de operação | -55C to +175C (junction) | — |
| Package Type | TO-220AB through-hole | — |
| Tipo de montagem | Through Hole | Through Hole |
| Technology Family | StrongIRFET / HEXFET | — |
| Channel Type | N-Channel | — |
| Logic-Level Gate Drive | Yes (optimized for 5V VGS) | — |
| Status RoHS | Compliant (Pb-free PBF suffix) | Compliant (Pb-free suffix) |
| Qualification Standard | JEDEC (Industrial market per datasheet) | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| Temperatura de junção de operação | — | -55 °C to +175 °C |
| Encapsulamento | — | TO-220AB (through-hole) |
| Technology | — | HEXFET (planar DMOS) |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |