ISK057N04LM6ATLA1 vs BSC028N06NSTATMA1 Comparação
Comparação detalhada lado a lado de ISK057N04LM6ATLA1 por Infineon e BSC028N06NSTATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | ISK057N04LM6ATLA1 | BSC028N06NSTATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,52 | $0,40 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | OptiMOS 5 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | Trench (OptiMOS 6) | MOSFET N-Channel (OptiMOS 5) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc | 64 A | — |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at TA=25C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| RDS(on) typical at VGS=10V | 5.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg total) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 39.1 W | — |
| Faixa de temperatura de operação | -55 °C to +150 °C | — |
| Encapsulamento / Caixa | PG-VSON-6-1 (PQFN 2x2) | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 | 1 |
| Packaging | Tape & Reel (TR) | — |
| DigiKey Part Number | 448-ISK057N04LM6ATLA1TR-ND | — |
| Part Number Base | — | BSC028N06NS |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V to 3.5 V |
| Total Gate Charge Qg | — | 37 nC @ VGS=10V |
| Input Capacitance Ciss | — | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] |
| Output Capacitance Coss | — | 825 pF |
| Reverse Transfer Capacitance Crss | — | 56 pF |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 100 W |
| Temperatura de junção de operação | — | -55C to +175C |
| Encapsulamento | — | PG-TDSON-8-7 (SuperSO8, 5x6 mm) |
| Livre de halogênio | — | Yes |
| AEC-Q101 Automotive Qualified | — | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] |