ISK057N04LM6ATLA1 vs BSC028N06NSTATMA1 Comparison
Detailed side-by-side comparison of ISK057N04LM6ATLA1 by Infineon and BSC028N06NSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISK057N04LM6ATLA1
ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon
ISK057N04LM6ATLA1 β ActiveInfineon
BSC028N06NSTATMA1
BSC028N06NSTATMA1 - 60V 2.8mΞ© N-Ch OptiMOS 5 MOSFET | Infineon
BSC028N06NSTATMA1 β ActiveSpecification Comparison
| Parameter | ISK057N04LM6ATLA1 | BSC028N06NSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.40 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | Trench (OptiMOS 6) | MOSFET N-Channel (OptiMOS 5) |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at Tc | 64 A | β |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at TA=25C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) max] | β |
| RDS(on) typical at VGS=10V | 5.7 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Gate Charge (Qg total) | [DATA_NEEDED: Qg total] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 39.1 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | β |
| Package / Case | PG-VSON-6-1 (PQFN 2x2) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Packaging | Tape & Reel (TR) | β |
| DigiKey Part Number | 448-ISK057N04LM6ATLA1TR-ND | β |
| Part Number Base | β | BSC028N06NS |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 24 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| On-Resistance RDS(on) max at VGS=10V | β | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 2.5 V to 3.5 V |
| Total Gate Charge Qg | β | 37 nC @ VGS=10V |
| Input Capacitance Ciss | β | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] |
| Output Capacitance Coss | β | 825 pF |
| Reverse Transfer Capacitance Crss | β | 56 pF |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 100 W |
| Operating Junction Temperature | β | -55C to +175C |
| Package | β | PG-TDSON-8-7 (SuperSO8, 5x6 mm) |
| Halogen-Free | β | Yes |
| AEC-Q101 Automotive Qualified | β | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] |