K9DUGY8S0M-BCK0 vs K9EUGY8S0M-CCK0 Comparação

Comparação detalhada lado a lado de K9DUGY8S0M-BCK0 por Samsung Electronics e K9EUGY8S0M-CCK0 por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Samsung Electronics
K9DUGY8S0M-BCK0 K9DUGY8S0M-BCK0 - Samsung NAND Flash Memory IC | Samsung

K9DUGY8S0M-BCK0 - Samsung NAND Flash Memory IC | Samsung

K9DUGY8S0M-BCK0 ✓ Ativo
Samsung Electronics
K9EUGY8S0M-CCK0 K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung

K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung

K9EUGY8S0M-CCK0 ✓ Ativo

Comparação de especificações

Parâmetro K9DUGY8S0M-BCK0 K9EUGY8S0M-CCK0
Marca Samsung Electronics Samsung Electronics
Categoria Flash Memory ICs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,00 $0,00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9 series NAND flash —
Tipo de memória NAND Flash —
Density [DATA_NEEDED: memory density] [DATA_NEEDED: total device density in Gb]
Organização da memória [DATA_NEEDED: organization (bit width)] —
Tipo de interface [DATA_NEEDED: interface type (async/ONFI/Toggle DDR)] —
Tensão de alimentação [DATA_NEEDED: supply voltage] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Max Clock / Access Speed [DATA_NEEDED: max clock frequency or access time] —
Program Time (typ) [DATA_NEEDED: typical page program time] —
Erase Time (typ) [DATA_NEEDED: typical block erase time] —
Endurance (P/E cycles) [DATA_NEEDED: program/erase endurance] —
Temperatura de operação [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Encapsulamento [DATA_NEEDED: package type and pin count] —
Tipo de montagem Surface Mount Surface Mount (BGA)
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance status]
Product Type — 3D TLC V-NAND Flash Memory
Cell Type — TLC (3 bits per cell)
V-NAND Layers — [DATA_NEEDED: layer count]
Interface — [DATA_NEEDED: interface type, e.g. Toggle DDR]
Supply Voltage VCC — [DATA_NEEDED: VCC core supply voltage]
Supply Voltage VCCQ — [DATA_NEEDED: VCCQ I/O supply voltage]
Package Type — [DATA_NEEDED: FBGA ball count and dimensions]
Grade Suffix — CCK0 (standard commercial grade)

Fichas técnicas e recursos

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