K9DUGY8S0M-BCK0 vs K9EUGY8S0M-CCK0 Comparación
Comparación detallada lado a lado de K9DUGY8S0M-BCK0 por Samsung Electronics y K9EUGY8S0M-CCK0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9DUGY8S0M-BCK0 - Samsung NAND Flash Memory IC | Samsung
K9DUGY8S0M-BCK0 ✓ ActivoComparación de especificaciones
| Parámetro | K9DUGY8S0M-BCK0 | K9EUGY8S0M-CCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Flash | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9 series NAND flash | — |
| Tipo de memoria | NAND Flash | — |
| Density | [DATA_NEEDED: memory density] | [DATA_NEEDED: total device density in Gb] |
| Organización de memoria | [DATA_NEEDED: organization (bit width)] | — |
| Tipo de interfaz | [DATA_NEEDED: interface type (async/ONFI/Toggle DDR)] | — |
| Tensión de alimentación | [DATA_NEEDED: supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Max Clock / Access Speed | [DATA_NEEDED: max clock frequency or access time] | — |
| Program Time (typ) | [DATA_NEEDED: typical page program time] | — |
| Erase Time (typ) | [DATA_NEEDED: typical block erase time] | — |
| Endurance (P/E cycles) | [DATA_NEEDED: program/erase endurance] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Encapsulado | [DATA_NEEDED: package type and pin count] | — |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Product Type | — | 3D TLC V-NAND Flash Memory |
| Cell Type | — | TLC (3 bits per cell) |
| V-NAND Layers | — | [DATA_NEEDED: layer count] |
| Interfaz | — | [DATA_NEEDED: interface type, e.g. Toggle DDR] |
| Supply Voltage VCC | — | [DATA_NEEDED: VCC core supply voltage] |
| Supply Voltage VCCQ | — | [DATA_NEEDED: VCCQ I/O supply voltage] |
| Package Type | — | [DATA_NEEDED: FBGA ball count and dimensions] |
| Grade Suffix | — | CCK0 (standard commercial grade) |