K9DVGY8J5M vs K9ADGD8S0A Comparação

Comparação detalhada lado a lado de K9DVGY8J5M por Samsung Electronics e K9ADGD8S0A por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ Ativo
Samsung Electronics
K9ADGD8S0A K9ADGD8S0A - 3D V-NAND TCAT Flash Memory Die | Samsung

K9ADGD8S0A - 3D V-NAND TCAT Flash Memory Die | Samsung

K9ADGD8S0A ✗ Fim de vida

Comparação de especificações

Parâmetro K9DVGY8J5M K9ADGD8S0A
Marca Samsung Electronics Samsung Electronics
Categoria Memory ICs EEPROM
Status do ciclo de vida Ativo Fim de vida
Status do estoque In Stock In Stock
Preço unitário (USD) $1,00 $0,00
Manufacturer Samsung Electronics Samsung Electronics
Product Type Raw NAND Flash Memory —
NAND Technology Samsung V-NAND (3D TLC) —
Flash ID EC519A3F8CCB —
Density [DATA_NEEDED: die density (Gb)] —
Organization (Page/Block) [DATA_NEEDED: page and block organization] —
Tipo de interface [DATA_NEEDED: interface (toggle DDR / async)] —
Supply Voltage (VCC) [DATA_NEEDED: VCC voltage] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ voltage] —
Program Page Time (tPROG) [DATA_NEEDED: tPROG typical/us] —
Block Erase Time (tBERS) [DATA_NEEDED: tBERS typical/us] —
Read Time (tR) [DATA_NEEDED: tR typical/us] —
Program/Erase Endurance [DATA_NEEDED: P/E cycle endurance] —
Temperatura de operação [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature]
Package Type [DATA_NEEDED: package type and dimensions] —
Tipo de montagem Surface Mount —
Status RoHS [DATA_NEEDED: RoHS status] —
Device Type — 3D V-NAND flash memory bare die
Process Technology — Terabit Cell Array Transistor (TCAT)
Architecture — 3D vertical NAND (V-NAND)
Form Factor — Bare die (unpackaged)
Found In — Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages
Known Application — Samsung 850 Pro 128 GB SSD
Memory Class — Non-volatile NAND flash
Documented By — TechInsights report SAR-1407-802
Capacity — [DATA_NEEDED: die capacity]
Tensão de alimentação — [DATA_NEEDED: supply voltage]
Interface — [DATA_NEEDED: interface type]
Page Size — [DATA_NEEDED: page size]
Program/Erase Cycles — [DATA_NEEDED: endurance]
Encapsulamento — [DATA_NEEDED: package]

Fichas técnicas e recursos

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