K9JUGY8J5C-BCK0 vs K9LUGY8J7D-CCK0 Comparação
Comparação detalhada lado a lado de K9JUGY8J5C-BCK0 por Samsung Electronics e K9LUGY8J7D-CCK0 por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Samsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ AtivoComparação de especificações
| Parâmetro | K9JUGY8J5C-BCK0 | K9LUGY8J7D-CCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoria | Flash | Memory ICs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,00 | $0,00 |
| Tipo de memória | NAND Flash (V-NAND TLC) | NAND Flash (V-NAND) |
| Density | 1 Tb | [DATA_NEEDED: total density (bits)] |
| Cell Type | Triple-Level Cell (TLC) | — |
| Technology | Samsung V-NAND (3D) | V-NAND (vertical NAND) |
| Organização da memória | [DATA_NEEDED: page/block organization] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Interface | [DATA_NEEDED: async/DDR or Toggle DDR interface and mode] | [DATA_NEEDED: interface type / toggle DDR mode] |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range] | — |
| Program Time (typ) | [DATA_NEEDED: tPROG] | — |
| Read Time (typ) | [DATA_NEEDED: tR] | — |
| Encapsulamento | [DATA_NEEDED: FBGA ball count / package code] | BGA (surface mount) |
| Temperatura de operação | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range (C)] |
| Endurance (P/E cycles) | [DATA_NEEDED: program/erase endurance] | — |
| Data Retention | [DATA_NEEDED: retention specification] | [DATA_NEEDED: retention] |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Tipo de montagem | Surface Mount | Surface Mount |
| Manufacturer | — | Samsung Electronics |
| Memory Cell Type | — | TLC (Triple-Level Cell) |
| Tensão de alimentação | — | [DATA_NEEDED: supply voltage (V)] |
| Program/Erase Endurance | — | [DATA_NEEDED: P/E cycles] |
| Speed Grade Code | — | CCK0 (per Samsung part-number convention) |