K9JUGY8J5C-BCK0 vs K9LUGY8J7D-CCK0 Vergleich

Detaillierter Direktvergleich von K9JUGY8J5C-BCK0 von Samsung Electronics und K9LUGY8J7D-CCK0 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Samsung Electronics
K9JUGY8J5C-BCK0 K9JUGY8J5C-BCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-BCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-BCK0 ✓ Aktiv
Samsung Electronics
K9LUGY8J7D-CCK0 K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics

K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics

K9LUGY8J7D-CCK0 ✓ Aktiv

Spezifikationsvergleich

Parameter K9JUGY8J5C-BCK0 K9LUGY8J7D-CCK0
Marke Samsung Electronics Samsung Electronics
Kategorie Flash Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $0,00
Speichertyp NAND Flash (V-NAND TLC) NAND Flash (V-NAND)
Density 1 Tb [DATA_NEEDED: total density (bits)]
Cell Type Triple-Level Cell (TLC) —
Technology Samsung V-NAND (3D) V-NAND (vertical NAND)
Speicherorganisation [DATA_NEEDED: page/block organization] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Schnittstelle [DATA_NEEDED: async/DDR or Toggle DDR interface and mode] [DATA_NEEDED: interface type / toggle DDR mode]
Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] —
Program Time (typ) [DATA_NEEDED: tPROG] —
Read Time (typ) [DATA_NEEDED: tR] —
Gehäuse [DATA_NEEDED: FBGA ball count / package code] BGA (surface mount)
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range (C)]
Endurance (P/E cycles) [DATA_NEEDED: program/erase endurance] —
Data Retention [DATA_NEEDED: retention specification] [DATA_NEEDED: retention]
RoHS-Status Compliant [DATA_NEEDED: RoHS status]
Montageart Surface Mount Surface Mount
Manufacturer — Samsung Electronics
Memory Cell Type — TLC (Triple-Level Cell)
Versorgungsspannung — [DATA_NEEDED: supply voltage (V)]
Program/Erase Endurance — [DATA_NEEDED: P/E cycles]
Speed Grade Code — CCK0 (per Samsung part-number convention)

Datenblätter & Ressourcen

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