K9NUGY8R6B-CCQ0 vs K9LUGY8J7D-CCK0 Comparação
Comparação detalhada lado a lado de K9NUGY8R6B-CCQ0 por Samsung Electronics e K9LUGY8J7D-CCK0 por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Samsung Electronics
K9NUGY8R6B-CCQ0 - 1Tb TLC V-NAND Flash | Samsung | SSD Storage
K9NUGY8R6B-CCQ0 ✓ AtivoSamsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ AtivoComparação de especificações
| Parâmetro | K9NUGY8R6B-CCQ0 | K9LUGY8J7D-CCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoria | Memory ICs | Memory ICs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,00 | $0,00 |
| Tipo de memória | NAND Flash (V-NAND, 3D TLC) | NAND Flash (V-NAND) |
| Density | 1 Tb | [DATA_NEEDED: total density (bits)] |
| Cell Type | Triple-Level Cell (TLC) | — |
| Encapsulamento | 176-ball FBGA (176L) | BGA (surface mount) |
| Tipo de montagem | Surface Mount (BGA) | Surface Mount |
| Tensão de alimentação | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage (V)] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Data Retention | [DATA_NEEDED: retention] | [DATA_NEEDED: retention] |
| Read Latency | [DATA_NEEDED: tR] | — |
| Interface | Asynchronous / Toggle-mode NAND (per Samsung V-NAND protocol) | [DATA_NEEDED: interface type / toggle DDR mode] |
| ECC Requirement | External controller LDPC ECC required | — |
| Temperatura de operação | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range (C)] |
| Status RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Application Class | Consumer / Client / Enterprise SSD raw NAND | — |
| Manufacturer | — | Samsung Electronics |
| Memory Cell Type | — | TLC (Triple-Level Cell) |
| Technology | — | V-NAND (vertical NAND) |
| Program/Erase Endurance | — | [DATA_NEEDED: P/E cycles] |
| Speed Grade Code | — | CCK0 (per Samsung part-number convention) |