K9NUGY8R6B-CCQ0 vs K9LUGY8J7D-CCK0 Comparaison
Comparaison détaillée côte à côte de K9NUGY8R6B-CCQ0 par Samsung Electronics et K9LUGY8J7D-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9NUGY8R6B-CCQ0 - 1Tb TLC V-NAND Flash | Samsung | SSD Storage
K9NUGY8R6B-CCQ0 ✓ ActifSamsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9NUGY8R6B-CCQ0 | K9LUGY8J7D-CCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Type de mémoire | NAND Flash (V-NAND, 3D TLC) | NAND Flash (V-NAND) |
| Density | 1 Tb | [DATA_NEEDED: total density (bits)] |
| Cell Type | Triple-Level Cell (TLC) | — |
| Boîtier | 176-ball FBGA (176L) | BGA (surface mount) |
| Type de montage | Surface Mount (BGA) | Surface Mount |
| Tension d'alimentation | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage (V)] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Data Retention | [DATA_NEEDED: retention] | [DATA_NEEDED: retention] |
| Read Latency | [DATA_NEEDED: tR] | — |
| Interface | Asynchronous / Toggle-mode NAND (per Samsung V-NAND protocol) | [DATA_NEEDED: interface type / toggle DDR mode] |
| ECC Requirement | External controller LDPC ECC required | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range (C)] |
| Statut RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Application Class | Consumer / Client / Enterprise SSD raw NAND | — |
| Manufacturer | — | Samsung Electronics |
| Memory Cell Type | — | TLC (Triple-Level Cell) |
| Technology | — | V-NAND (vertical NAND) |
| Program/Erase Endurance | — | [DATA_NEEDED: P/E cycles] |
| Speed Grade Code | — | CCK0 (per Samsung part-number convention) |