MRF377HR3 vs MRFE6S9160HSR3 Comparação
Comparação detalhada lado a lado de MRF377HR3 por NXP Semiconductors e MRFE6S9160HSR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MRF377HR3 | MRFE6S9160HSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $68,50 | $55,20 |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Technology | Lateral RF Power MOSFET (Silicon) | HV6E (6th gen high-voltage LDMOS) |
| Frequency Range | 470 MHz to 860 MHz | — |
| Drain-Source Voltage (V DSS) | 65 V (max) | — |
| Operating Drain Voltage | 32 V (typical) | — |
| Continuous Output Power (P out) | 45 W (CW, push-pull) | — |
| Power Gain (G ps) | 18.2 dB (typical at 860 MHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | 31% (typical at 35 W avg.) |
| Test Current | 2 A | — |
| Configuration | Push-Pull (internally matched) | — |
| Encapsulamento | NI-860C3 (ceramic flange) | NI-780S (NI780HS) ceramic, bolted flange |
| Tipo de montagem | Flange / Screw Mount (Surface Mount variant per HR3 suffix) | Through-hole / chassis mount with flange |
| Temperatura de operação | -40 C to +200 C (junction) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Lead-Free / RoHS | Lead Free / RoHS Compliant | — |
| Case Connection | Source | — |
| Maximum Power Dissipation | 648 W (per Partstack listing) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRFE6S9160HSR3 |
| Drain-Source Voltage (VDSS) | — | 66 V (rated) |
| Tensão de ruptura dreno-fonte | — | [DATA_NEEDED: V(BR)DSS minimum] |
| Operating Drain Voltage (VDD) | — | 28 V (typical bias) |
| Continuous Drain Current (ID) | — | 10 uA [leakage spec context, ID max [DATA_NEEDED]] |
| Quiescent Current (IDQ) | — | 1200 mA |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Test Frequency | — | 880 MHz |
| Output Power (Pout) Avg. | — | 35 W (under N-CDMA drive, 9.8 dB PAR) |
| Output Power Peak | — | 160 W (peak envelope) |
| Power Gain | — | 21 dB (typical at 880 MHz) |
| ACPR at 750 kHz Offset | — | -46.8 dBc |
| Status RoHS | — | [DATA_NEEDED: confirm via latest distributor listing] |