MRF377HR3 vs MRFE6S9160HSR3 对比

详细并排对比 MRF377HR3 出自 NXP Semiconductors 和 MRFE6S9160HSR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF377HR3 MRF377HR3 - 45W 470-860MHz RF Power MOSFET | NXP

MRF377HR3 - 45W 470-860MHz RF Power MOSFET | NXP

MRF377HR3 ✓ 量产中
NXP Semiconductors
MRFE6S9160HSR3 MRFE6S9160HSR3 - 160W RF Power LDMOS 880MHz | NXP

MRFE6S9160HSR3 - 160W RF Power LDMOS 880MHz | NXP

MRFE6S9160HSR3 ✓ 量产中

规格对比

参数 MRF377HR3 MRFE6S9160HSR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $68.50 $55.20
晶体管类型 N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel, Enhancement-Mode, Lateral
Technology Lateral RF Power MOSFET (Silicon) HV6E (6th gen high-voltage LDMOS)
Frequency Range 470 MHz to 860 MHz —
Drain-Source Voltage (V DSS) 65 V (max) —
Operating Drain Voltage 32 V (typical) —
Continuous Output Power (P out) 45 W (CW, push-pull) —
Power Gain (G ps) 18.2 dB (typical at 860 MHz) —
Drain Efficiency [DATA_NEEDED: drain efficiency %] 31% (typical at 35 W avg.)
Test Current 2 A —
Configuration Push-Pull (internally matched) —
封装 NI-860C3 (ceramic flange) NI-780S (NI780HS) ceramic, bolted flange
安装类型 Flange / Screw Mount (Surface Mount variant per HR3 suffix) Through-hole / chassis mount with flange
工作温度 -40 C to +200 C (junction) —
Storage Temperature [DATA_NEEDED: storage temperature range] —
Lead-Free / RoHS Lead Free / RoHS Compliant —
Case Connection Source —
Maximum Power Dissipation 648 W (per Partstack listing) —
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Number — MRFE6S9160HSR3
Drain-Source Voltage (VDSS) — 66 V (rated)
漏源击穿电压 — [DATA_NEEDED: V(BR)DSS minimum]
Operating Drain Voltage (VDD) — 28 V (typical bias)
Continuous Drain Current (ID) — 10 uA [leakage spec context, ID max [DATA_NEEDED]]
Quiescent Current (IDQ) — 1200 mA
Operating Frequency Range — 865 MHz to 960 MHz
Test Frequency — 880 MHz
Output Power (Pout) Avg. — 35 W (under N-CDMA drive, 9.8 dB PAR)
Output Power Peak — 160 W (peak envelope)
Power Gain — 21 dB (typical at 880 MHz)
ACPR at 750 kHz Offset — -46.8 dBc
RoHS 状态 — [DATA_NEEDED: confirm via latest distributor listing]

数据手册与资源

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