MRF5P21180HR5 vs MRF6P21190HR5 Comparação

Comparação detalhada lado a lado de MRF5P21180HR5 por NXP Semiconductors e MRF6P21190HR5 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF5P21180HR5 MRF5P21180HR5 - 2170MHz, 38W W-CDMA RF LDMOS | NXP

MRF5P21180HR5 - 2170MHz, 38W W-CDMA RF LDMOS | NXP

MRF5P21180HR5 ✓ Ativo
NXP Semiconductors
MRF6P21190HR5 MRF6P21190HR5 - 44W LDMOS RF Power Transistor 2.12GHz | NXP

MRF6P21190HR5 - 44W LDMOS RF Power Transistor 2.12GHz | NXP

MRF6P21190HR5 Obsolete

Comparação de especificações

Parâmetro MRF5P21180HR5 MRF6P21190HR5
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Obsolete
Status do estoque In Stock In Stock
Preço unitário (USD) $65,00 $65,00
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Family MRF5P21180 —
Tipo de transistor LDMOS (Laterally Diffused MOSFET), N-Channel LDMOS, N-Channel
Technology Lateral N-Channel RF Power MOSFET LDMOS (Laterally Diffused MOS)
Drain-Source Voltage (VDS) Rated 65 V —
Operating Drain Voltage (Test) 28 V —
Test Frequency 2.16 GHz —
Operating Frequency Range 2110 MHz to 2170 MHz (W-CDMA band) —
Output Power (Pout, CW or Avg) 38 W —
Power Gain 14 dB at 2.16 GHz 15.5 dB
Quiescent Current (Idq) at Test 1.6 A —
Current Rating (Datasheet Symbol) [DATA_NEEDED: continuous drain current] —
Encapsulamento / Caixa NI-1230 (5-pin ceramic flange-mount) NI-1230 (ceramic, bolt-down flange)
Tipo de montagem Chassis / Flange Mount (bolt-down) Chassis-mount, bolt-down flange with PCB lead
Operating Mode Class AB, single-ended or Doherty —
Modulation Support W-CDMA, TDMA, CDMA, multicarrier —
Lead Free / RoHS Lead Free (per distributor listings) —
Application — RF Power Amplifier (W-CDMA / LTE base station)
Frequency — 2.12 GHz (operating range 1930-2120 MHz)
Test Supply Voltage (Vdd) — 28 V
Voltage - Rated (Vds max) — 68 V
Output Power (Pout) — 44 W (CW, at 2.12 GHz)
Test Current (Idq) — 1.9 A
Drain Efficiency (typical) — 33 %
Supplier Device Package — NI-1230
Temperatura de operação — -40 C to +150 C (junction)
Status RoHS — [DATA_NEEDED: RoHS status]
Lead-Free / Finish — Gold-plated leads (typical for NI-1230 family)
Polarity / Channel — N-Channel

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