MRF5P21180HR5 vs MRF6P21190HR5 Vergleich

Detaillierter Direktvergleich von MRF5P21180HR5 von NXP Semiconductors und MRF6P21190HR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF5P21180HR5 MRF5P21180HR5 - 2170MHz, 38W W-CDMA RF LDMOS | NXP

MRF5P21180HR5 - 2170MHz, 38W W-CDMA RF LDMOS | NXP

MRF5P21180HR5 ✓ Aktiv
NXP Semiconductors
MRF6P21190HR5 MRF6P21190HR5 - 44W LDMOS RF Power Transistor 2.12GHz | NXP

MRF6P21190HR5 - 44W LDMOS RF Power Transistor 2.12GHz | NXP

MRF6P21190HR5 Obsolete

Spezifikationsvergleich

Parameter MRF5P21180HR5 MRF6P21190HR5
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $65,00 $65,00
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Family MRF5P21180 —
Transistortyp LDMOS (Laterally Diffused MOSFET), N-Channel LDMOS, N-Channel
Technology Lateral N-Channel RF Power MOSFET LDMOS (Laterally Diffused MOS)
Drain-Source Voltage (VDS) Rated 65 V —
Operating Drain Voltage (Test) 28 V —
Test Frequency 2.16 GHz —
Operating Frequency Range 2110 MHz to 2170 MHz (W-CDMA band) —
Output Power (Pout, CW or Avg) 38 W —
Power Gain 14 dB at 2.16 GHz 15.5 dB
Quiescent Current (Idq) at Test 1.6 A —
Current Rating (Datasheet Symbol) [DATA_NEEDED: continuous drain current] —
Gehäuse / Bauform NI-1230 (5-pin ceramic flange-mount) NI-1230 (ceramic, bolt-down flange)
Montageart Chassis / Flange Mount (bolt-down) Chassis-mount, bolt-down flange with PCB lead
Operating Mode Class AB, single-ended or Doherty —
Modulation Support W-CDMA, TDMA, CDMA, multicarrier —
Lead Free / RoHS Lead Free (per distributor listings) —
Application — RF Power Amplifier (W-CDMA / LTE base station)
Frequency — 2.12 GHz (operating range 1930-2120 MHz)
Test Supply Voltage (Vdd) — 28 V
Voltage - Rated (Vds max) — 68 V
Output Power (Pout) — 44 W (CW, at 2.12 GHz)
Test Current (Idq) — 1.9 A
Drain Efficiency (typical) — 33 %
Supplier Device Package — NI-1230
Betriebstemperatur — -40 C to +150 C (junction)
RoHS-Status — [DATA_NEEDED: RoHS status]
Lead-Free / Finish — Gold-plated leads (typical for NI-1230 family)
Polarity / Channel — N-Channel

Datenblätter & Ressourcen

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