MRF7S16150HSR3 vs MRF7S21150HSR3 Comparação
Comparação detalhada lado a lado de MRF7S16150HSR3 por NXP Semiconductors e MRF7S21150HSR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
MRF7S21150HSR3 ObsoleteComparação de especificações
| Parâmetro | MRF7S16150HSR3 | MRF7S21150HSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Obsolete |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $24,50 | $62,80 |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel LDMOS RF Power MOSFET |
| Technology | RF Power Field-Effect Transistor (HV7 process) | — |
| Drain-Source Voltage (VDS) Rated | 65 V minimum | — |
| Drain-Source Voltage (Test Condition) | 28 V typical operating | — |
| Continuous Drain Current | 1.5 A | — |
| Operating Frequency Range | 1.6 GHz to 1.66 GHz | — |
| Test Frequency | 1.6 GHz | — |
| Power Gain | 19.7 dB | 17.5 dB (typical at 2.14 GHz) |
| Output Power (Pout) | 32 W | — |
| Configuration | Single (SINGLE) | Single, push-pull final stage |
| Encapsulamento / Caixa | NI-780S (ceramic, metal-sealed cofired, surface mount) | — |
| Tipo de montagem | Surface Mount / bolt-down flange | Flange / bolt-down with ceramic body |
| Case Connection | SOURCE (flange tied to source) | — |
| Channel Temperature (Tch max) | [DATA_NEEDED: maximum channel temperature] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Lead / Terminal Finish | [DATA_NEEDED: lead finish / plating] | — |
| Nível MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL rating] |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Test Voltage | — | 28 V |
| Rated Drain Voltage (Vds max) | — | 65 V |
| Average Output Power | — | 44 W (W-CDMA) |
| Peak Output Power | — | 150 W |
| Test Current | — | 1.35 A |
| Encapsulamento | — | NI-780S (NI-780 HS variant) |
| Lead Configuration | — | High-source-leads (HS) variant |
| Operating Mode | — | Class AB / Doherty |
| Application | — | W-CDMA, LTE base station final-stage PA |
| JEDEC Qualification | — | JESD22 thermal/mechanical |