MRF7S16150HSR3 vs MRF7S21150HSR3 비교

다음의 상세 나란히 비교: MRF7S16150HSR3 제조: NXP Semiconductors 및 MRF7S21150HSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF7S16150HSR3 MRF7S16150HSR3 - 32W RF Power LDMOS, 1.6GHz WIMAX | NXP

MRF7S16150HSR3 - 32W RF Power LDMOS, 1.6GHz WIMAX | NXP

MRF7S16150HSR3 ✓ 활성
NXP Semiconductors
MRF7S21150HSR3 MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP

MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP

MRF7S21150HSR3 Obsolete

사양 비교

파라미터 MRF7S16150HSR3 MRF7S21150HSR3
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 Obsolete
재고 상태 In Stock In Stock
단가 (USD) $24.50 $62.80
트랜지스터 유형 LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel LDMOS RF Power MOSFET
Technology RF Power Field-Effect Transistor (HV7 process) —
Drain-Source Voltage (VDS) Rated 65 V minimum —
Drain-Source Voltage (Test Condition) 28 V typical operating —
Continuous Drain Current 1.5 A —
Operating Frequency Range 1.6 GHz to 1.66 GHz —
Test Frequency 1.6 GHz —
Power Gain 19.7 dB 17.5 dB (typical at 2.14 GHz)
Output Power (Pout) 32 W —
Configuration Single (SINGLE) Single, push-pull final stage
패키지 / 케이스 NI-780S (ceramic, metal-sealed cofired, surface mount) —
실장 유형 Surface Mount / bolt-down flange Flange / bolt-down with ceramic body
Case Connection SOURCE (flange tied to source) —
Channel Temperature (Tch max) [DATA_NEEDED: maximum channel temperature] —
Storage Temperature [DATA_NEEDED: storage temperature range] —
RoHS 상태 [DATA_NEEDED: RoHS compliance] [DATA_NEEDED: RoHS status]
Lead / Terminal Finish [DATA_NEEDED: lead finish / plating] —
MSL 레벨 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: MSL rating]
Frequency Band — 2110 MHz to 2170 MHz
Test Voltage — 28 V
Rated Drain Voltage (Vds max) — 65 V
Average Output Power — 44 W (W-CDMA)
Peak Output Power — 150 W
Test Current — 1.35 A
패키지 — NI-780S (NI-780 HS variant)
Lead Configuration — High-source-leads (HS) variant
Operating Mode — Class AB / Doherty
Application — W-CDMA, LTE base station final-stage PA
JEDEC Qualification — JESD22 thermal/mechanical

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