MW7IC18100GNR1 vs MW7IC18100NR1 Comparação
Comparação detalhada lado a lado de MW7IC18100GNR1 por NXP Semiconductors e MW7IC18100NR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
MW7IC18100GNR1 - 100W 1990MHz RF LDMOS Power Amplifier | NXP
MW7IC18100GNR1 ✓ AtivoComparação de especificações
| Parâmetro | MW7IC18100GNR1 | MW7IC18100NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | RF Amplifiers | RF Amplifiers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $99,50 | $61,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MW7IC18100GNR1 | — |
| Part Family | MW7IC18100N series | — |
| Device Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1805 MHz to 2050 MHz | 1.805 GHz to 2.05 GHz |
| Operating Voltage (VDD) | 24 V to 32 V (28 V typical) | — |
| Output Power (Pout) | 100 W CW (typical) | — |
| Power Gain | 27 dB to 30 dB (typical) | — |
| Power-Added Efficiency (PAE) | 48 % at 100 W CW | — |
| Supported Modulations | GSM, GSM EDGE, CDMA | — |
| Quiescent Current (IDQ1 / IDQ2) | 180 mA / 1000 mA | — |
| Technology | LDMOS (Laterally Diffused MOS) | — |
| Package / Outline | TO-270 WB-14 GULL (flanged ceramic) | — |
| Tipo de montagem | Flange-mount, bolt-down | Surface Mount (gull-wing flat leads) |
| Package Body Material | Plastic / Epoxy over ceramic carrier | — |
| Terminal Finish | Matte Tin (Sn) | — |
| On-Chip Matching | Yes (input matched; output partial) | — |
| Application | Cellular base-station PA, GSM/EDGE/CDMA | — |
| Status RoHS | Compliant (lead-free) | Compliant |
| Product Type | — | RF LDMOS Wideband Integrated Power Amplifier |
| Output Power (CW, typical) | — | 100 W (50 dBm) |
| Power Gain (typical) | — | 30 dB |
| P1dB (typical) | — | 25 W (44 dBm) CW |
| Supply Voltage (VDD) | — | 24 V to 32 V (28 V typical) |
| Supply Current (typical) | — | 1.18 A |
| RF Modulation Support | — | GSM, GSM EDGE, CDMA, W-CDMA |
| VSWR Ruggedness | — | 5:1 stable into mismatch |
| Spurious (100 mW to 5 W CW) | — | Below -60 dBc |
| Encapsulamento / Caixa | — | TO-270 WB-14 (Case 1618-02), plastic, flat leads |
| Lead Finish | — | e3 (matte tin) |
| Temperatura de operação | — | -40C to +85C (case) |
| Body Material | — | Plastic / Epoxy |