MW7IC18100GNR1 vs MW7IC18100NR1 Vergleich
Detaillierter Direktvergleich von MW7IC18100GNR1 von NXP Semiconductors und MW7IC18100NR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MW7IC18100GNR1 - 100W 1990MHz RF LDMOS Power Amplifier | NXP
MW7IC18100GNR1 ✓ AktivSpezifikationsvergleich
| Parameter | MW7IC18100GNR1 | MW7IC18100NR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | RF Amplifiers | RF Amplifiers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $99,50 | $61,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MW7IC18100GNR1 | — |
| Part Family | MW7IC18100N series | — |
| Device Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1805 MHz to 2050 MHz | 1.805 GHz to 2.05 GHz |
| Operating Voltage (VDD) | 24 V to 32 V (28 V typical) | — |
| Output Power (Pout) | 100 W CW (typical) | — |
| Power Gain | 27 dB to 30 dB (typical) | — |
| Power-Added Efficiency (PAE) | 48 % at 100 W CW | — |
| Supported Modulations | GSM, GSM EDGE, CDMA | — |
| Quiescent Current (IDQ1 / IDQ2) | 180 mA / 1000 mA | — |
| Technology | LDMOS (Laterally Diffused MOS) | — |
| Package / Outline | TO-270 WB-14 GULL (flanged ceramic) | — |
| Montageart | Flange-mount, bolt-down | Surface Mount (gull-wing flat leads) |
| Package Body Material | Plastic / Epoxy over ceramic carrier | — |
| Terminal Finish | Matte Tin (Sn) | — |
| On-Chip Matching | Yes (input matched; output partial) | — |
| Application | Cellular base-station PA, GSM/EDGE/CDMA | — |
| RoHS-Status | Compliant (lead-free) | Compliant |
| Product Type | — | RF LDMOS Wideband Integrated Power Amplifier |
| Output Power (CW, typical) | — | 100 W (50 dBm) |
| Power Gain (typical) | — | 30 dB |
| P1dB (typical) | — | 25 W (44 dBm) CW |
| Supply Voltage (VDD) | — | 24 V to 32 V (28 V typical) |
| Supply Current (typical) | — | 1.18 A |
| RF Modulation Support | — | GSM, GSM EDGE, CDMA, W-CDMA |
| VSWR Ruggedness | — | 5:1 stable into mismatch |
| Spurious (100 mW to 5 W CW) | — | Below -60 dBc |
| Gehäuse / Bauform | — | TO-270 WB-14 (Case 1618-02), plastic, flat leads |
| Lead Finish | — | e3 (matte tin) |
| Betriebstemperatur | — | -40C to +85C (case) |
| Body Material | — | Plastic / Epoxy |