RTAX2000D-1CQ352E vs RTAX2000D-1CQ352V Comparação

Comparação detalhada lado a lado de RTAX2000D-1CQ352E por Microchip Technology e RTAX2000D-1CQ352V por Microchip Technology. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Microchip Technology
RTAX2000D-1CQ352E RTAX2000D-1CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip

RTAX2000D-1CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip

RTAX2000D-1CQ352E ✓ Ativo
Microchip Technology
RTAX2000D-1CQ352V RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V ✓ Ativo

Comparação de especificações

Parâmetro RTAX2000D-1CQ352E RTAX2000D-1CQ352V
Marca Microchip Technology Microchip Technology
Categoria FPGA & CPLD FPGA & CPLD
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $3.650,00 $3.950,00
Equivalent System Gates 2000000 gates —
Logic Organization 19712 CLBs —
Technology Digital CMOS FPGA, antifuse (nonvolatile) Digital CMOS, antifuse (nonvolatile)
Encapsulamento CQFP352 (352-terminal Ceramic Quad Flat Pack) CQFP-352 (CQ352), ceramic
Faixa de temperatura de operação -55C to +125C —
Family RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs —
Total Ionizing Dose (Functional) 300 krad 300 krad (Si)
Total Ionizing Dose (Rated) 200 krad —
DSP Mathblocks Up to 120 Up to 120
DSP MAC Performance 125 MHz, 18-bit x 18-bit multiply-accumulate 125 MHz, 18-bit x 18-bit multiply-accumulate
Embedded Memory Up to 540 kbits with optional EDAC protection Up to 540 kbits with optional EDAC protection
Programmability One-time programmable (antifuse) —
Tensão de alimentação [DATA_NEEDED: core/supply voltage] —
User I/O Terminals [DATA_NEEDED: user I/O count for CQ352] —
Max System Frequency [DATA_NEEDED: max system frequency] —
Radiation Environment Target Space-based applications —
Commercial Prototype Equivalent Axcelerator family device —
Equivalent Gates — 2,000,000
Logic Cells — 29,568
CLBs — 19,712
Core Supply Voltage — 1.425 V to 1.575 V (nominal 1.5 V)
Total Ionizing Dose — 200 krad (Si)
Configuration — Live at power-up, single-chip, no external configuration device
Speed Grade — -1
Tipo de montagem — Surface Mount
Screening — RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test)
Temperatura de operação — [DATA_NEEDED: Operating Temperature]
Status RoHS — [DATA_NEEDED: RoHS Status]

Fichas técnicas e recursos

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