RTAX2000D-1CQ352E vs RTAX2000D-1CQ352V Vergleich
Detaillierter Direktvergleich von RTAX2000D-1CQ352E von Microchip Technology und RTAX2000D-1CQ352V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX2000D-1CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip
RTAX2000D-1CQ352E ✓ AktivMicrochip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ AktivSpezifikationsvergleich
| Parameter | RTAX2000D-1CQ352E | RTAX2000D-1CQ352V |
|---|---|---|
| Marke | Microchip Technology | Microchip Technology |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3.650,00 | $3.950,00 |
| Equivalent System Gates | 2000000 gates | — |
| Logic Organization | 19712 CLBs | — |
| Technology | Digital CMOS FPGA, antifuse (nonvolatile) | Digital CMOS, antifuse (nonvolatile) |
| Gehäuse | CQFP352 (352-terminal Ceramic Quad Flat Pack) | CQFP-352 (CQ352), ceramic |
| Betriebstemperaturbereich | -55C to +125C | — |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | — |
| Total Ionizing Dose (Functional) | 300 krad | 300 krad (Si) |
| Total Ionizing Dose (Rated) | 200 krad | — |
| DSP Mathblocks | Up to 120 | Up to 120 |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Up to 540 kbits with optional EDAC protection |
| Programmability | One-time programmable (antifuse) | — |
| Versorgungsspannung | [DATA_NEEDED: core/supply voltage] | — |
| User I/O Terminals | [DATA_NEEDED: user I/O count for CQ352] | — |
| Max System Frequency | [DATA_NEEDED: max system frequency] | — |
| Radiation Environment Target | Space-based applications | — |
| Commercial Prototype Equivalent | Axcelerator family device | — |
| Equivalent Gates | — | 2,000,000 |
| Logic Cells | — | 29,568 |
| CLBs | — | 19,712 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (nominal 1.5 V) |
| Total Ionizing Dose | — | 200 krad (Si) |
| Configuration | — | Live at power-up, single-chip, no external configuration device |
| Speed Grade | — | -1 |
| Montageart | — | Surface Mount |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |
| Betriebstemperatur | — | [DATA_NEEDED: Operating Temperature] |
| RoHS-Status | — | [DATA_NEEDED: RoHS Status] |