RTAX2000DL-CQ352B vs RTAX2000DL-CQ352V Comparação
Comparação detalhada lado a lado de RTAX2000DL-CQ352B por Microchip Technology e RTAX2000DL-CQ352V por Microchip Technology. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Microchip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ AtivoMicrochip Technology
RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352V ✓ AtivoComparação de especificações
| Parâmetro | RTAX2000DL-CQ352B | RTAX2000DL-CQ352V |
|---|---|---|
| Marca | Microchip Technology | Microchip Technology |
| Categoria | FPGA & CPLD | FPGA & CPLD |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,00 | $0,00 |
| Equivalent System Gates | 2,000,000 | 2,000,000 |
| Logic Cells | [DATA_NEEDED: Logic Cells] | 29,568 |
| CLBs | 19,712 | 19,712 |
| DSP Mathblocks | Up to 120 | Up to 120 (18-bit x 18-bit MAC, up to 125 MHz) |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Up to 540 kbits SRAM with optional EDAC |
| Programming Technology | Nonvolatile antifuse | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose (Parameter) | 200 krad (Si) | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Encapsulamento | 352-terminal ceramic CQFP, metal-sealed | CQFP-352, hermetically sealed ceramic, metal-sealed cofired |
| Terminal Pitch | 0.500 mm | 0.500 mm |
| Tipo de montagem | Surface Mount | Surface Mount |
| Temperatura de operação | [DATA_NEEDED: Operating Temperature Range] | -55C to +125C |
| Configuration | Live at power-up, no external boot PROM required | Live-at-power-up (antifuse, no external boot device) |
| Application Domain | Space flight systems | — |
| Technology | — | CMOS, antifuse (nonvolatile, one-time programmable) |
| Core Supply Voltage | — | 1.5 V nominal (1.425 V to 1.575 V) |
| Maximum Combinatorial Delay | — | 1.100 ns |
| Total Ionizing Dose (TID) | — | 300 krad (functional); 200 krad (per family data) |
| Family | — | RTAX-DSP (RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs) |