RTAX2000DL-CQ352V vs RTAX2000DL-CQ352B Comparação

Comparação detalhada lado a lado de RTAX2000DL-CQ352V por Microchip Technology e RTAX2000DL-CQ352B por Microchip Technology. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Microchip Technology
RTAX2000DL-CQ352V RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-CQ352V ✓ Ativo
Microchip Technology
RTAX2000DL-CQ352B RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-CQ352B ✓ Ativo

Comparação de especificações

Parâmetro RTAX2000DL-CQ352V RTAX2000DL-CQ352B
Marca Microchip Technology Microchip Technology
Categoria FPGA & CPLD FPGA & CPLD
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,00 $0,00
Equivalent System Gates 2,000,000 2,000,000
Logic Cells 29,568 [DATA_NEEDED: Logic Cells]
CLBs 19,712 19,712
Technology CMOS, antifuse (nonvolatile, one-time programmable) —
Core Supply Voltage 1.5 V nominal (1.425 V to 1.575 V) —
DSP Mathblocks Up to 120 (18-bit x 18-bit MAC, up to 125 MHz) Up to 120
Embedded Memory Up to 540 kbits SRAM with optional EDAC Up to 540 kbits with optional EDAC protection
Maximum Combinatorial Delay 1.100 ns —
Total Ionizing Dose (TID) 300 krad (functional); 200 krad (per family data) —
Encapsulamento CQFP-352, hermetically sealed ceramic, metal-sealed cofired 352-terminal ceramic CQFP, metal-sealed
Terminal Pitch 0.500 mm 0.500 mm
Tipo de montagem Surface Mount Surface Mount
Temperatura de operação -55C to +125C [DATA_NEEDED: Operating Temperature Range]
Configuration Live-at-power-up (antifuse, no external boot device) Live at power-up, no external boot PROM required
Family RTAX-DSP (RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs) —
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Programming Technology — Nonvolatile antifuse
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parameter) — 200 krad (Si)
Core Supply Voltage (Nominal) — 1.5 V
Core Supply Voltage Range — 1.425 V to 1.575 V
Application Domain — Space flight systems

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