RTAX2000DL-CQ352V vs RTAX2000DL-CQ352B Comparaison
Comparaison détaillée côte à côte de RTAX2000DL-CQ352V par Microchip Technology et RTAX2000DL-CQ352B par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352V ✓ ActifMicrochip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ ActifComparaison des spécifications
| Paramètre | RTAX2000DL-CQ352V | RTAX2000DL-CQ352B |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Equivalent System Gates | 2,000,000 | 2,000,000 |
| Logic Cells | 29,568 | [DATA_NEEDED: Logic Cells] |
| CLBs | 19,712 | 19,712 |
| Technology | CMOS, antifuse (nonvolatile, one-time programmable) | — |
| Core Supply Voltage | 1.5 V nominal (1.425 V to 1.575 V) | — |
| DSP Mathblocks | Up to 120 (18-bit x 18-bit MAC, up to 125 MHz) | Up to 120 |
| Embedded Memory | Up to 540 kbits SRAM with optional EDAC | Up to 540 kbits with optional EDAC protection |
| Maximum Combinatorial Delay | 1.100 ns | — |
| Total Ionizing Dose (TID) | 300 krad (functional); 200 krad (per family data) | — |
| Boîtier | CQFP-352, hermetically sealed ceramic, metal-sealed cofired | 352-terminal ceramic CQFP, metal-sealed |
| Terminal Pitch | 0.500 mm | 0.500 mm |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | -55C to +125C | [DATA_NEEDED: Operating Temperature Range] |
| Configuration | Live-at-power-up (antifuse, no external boot device) | Live at power-up, no external boot PROM required |
| Family | RTAX-DSP (RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs) | — |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Programming Technology | — | Nonvolatile antifuse |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Application Domain | — | Space flight systems |