BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon
N.º da peça: BSR315PH6327XTSA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.49 | $0,49 |
| 10 | $0.42 | $4,20 |
| 100 | $0.34 | $34,00 |
| 500 | $0.27 | $135,00 |
| 1.000 | $0.22 | $220,00 |
BSR315PH6327XTSA1 Visão geral
A P-channel MOSFET is a type of metal-oxide-semiconductor field-effect transistor in which the channel is formed by hole conduction rather than electron conduction. In a typical enhancement-mode P-channel device the gate must be pulled below the source to turn the device on. P-channel MOSFETs occupy the same role as N-channel MOSFETs in circuit topology (low-side or high-side switches, load switches, level shifters) but they are particularly useful for high-side switching because they can be driven from a low-voltage gate signal referenced to the system ground, eliminating the need for a charge pump or bootstrap circuit. P-channel MOSFETs are widely used as load switches, in battery protection, USB power switching, and reverse-polarity protection.
The BSR315P offers a typical on-state resistance (RDS(on)) of approximately 800 mOhm at -620 mA and -10 V VGS, a gate threshold voltage in the ±20 V VGS range, and an input capacitance of about 176 pF at 25 V. The OptiMOS process achieves low on-resistance per silicon area and fast switching, suiting both linear and saturated switching applications. With a continuous drain current of 620 mA at 25 C ambient and a maximum junction temperature of 150 C, the part balances compact SOT-23-3 packaging with usable power handling when properly derated.
The PG-SC59 / SOT-23-3 footprint uses industry-standard 3-pin SMD pinout (GATE / SOURCE / DRAIN), so the part drops directly into standard P-channel SOT-23-3 land patterns designed for similar-rated devices. Tape-and-reel packaging (H6327 suffix) supports high-volume automated assembly. Operating temperature range is -55 C to +150 C junction.
Typical applications for the BSR315PH6327XTSA1 include high-side load switching in battery-powered portable equipment, USB power-distribution switches, reverse-polarity / reverse-discharge protection in charger circuits, power-rail OR-ing, and level translation. The 60 V rating provides substantial transient headroom for 12 V automotive and industrial buses.
When designing with this part, observe that RDS(on) is specified at -10 V VGS; the device does not fully enhance at logic levels (3.3 V or 5 V). Use a gate-driver transistor or pull the gate to a sufficiently negative rail to ensure low-loss operation, or add a small charge pump if a logic-level gate drive is required. Provide adequate copper pour at the SOURCE tab (pin 2) for thermal dissipation, and derate continuous drain current with ambient temperature per the SOA curve in the manufacturer datasheet.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the BSR315PH6327XTSA1 not found in the manufacturer datasheet alone, providing engineers with an at-a-glance comparison against same-brand and cross-brand drop-in equivalents.
Alternativas drop-in para BSR315PH6327XTSA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com BSR315PH6327XTSA1 (mesmo formato e footprint) — diferindo em Package, Qualification, Drain-Source Voltage (VDS), Operating Temperature Range, Part Number.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
BSR315PL6327HTSA1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSR316PH6327XTSA1
✅ Drop-In✓ Em estoque
$0.22 / unidade
Ver ficha técnica →BSP125H6327XTSA1
✅ Drop-In✓ Em estoque
$0.38 / unidade
Ver ficha técnica →NTR4101PT1G
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
DMP3098L-7
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
PMF780SN,115
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSR315PH6327XTSA1 Classificações máximas e características elétricas
| Manufacturer | Infineon Technologies |
| Part Number | BSR315PH6327XTSA1 |
| Series | OptiMOS P-Channel |
| FET Type | P-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) | -620 mA (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | 800 mOhm @ -620 mA, -10 V |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max VGS) |
| Input Capacitance (Ciss) | 176 pF @ 25 V |
| Total Gate Charge (Qg) | 6 nC @ 10 V |
| Faixa de temperatura de operação | -55 C to +150 C (TJ) |
| Encapsulamento | PG-SC59-3 / SOT-23-3 |
| Tipo de montagem | Surface Mount |
| Contagem de pinos | 3 |
| Packaging | Tape & Reel (TR) |
| Status RoHS | Compliant |
| Automotive Qualified | Yes (per Infineon product family marking) |
Configuração de pinos do BSR315PH6327XTSA1
| Pino 1 | GATE — Gate control input; drive negative relative to SOURCE to turn on |
| Pino 2 | SOURCE — Source terminal (typically tied to higher-voltage rail for high-side switch); thermal tab |
| Pino 3 | DRAIN — Drain terminal (typically the switched load side) |
Área de Operação Segura (DC)
Aplicações típicas
BSR315PH6327XTSA1 é adequado para 6 aplicaçãos: USB Power-Distribution High-Side Switch, Battery Reverse-Polarity / Reverse-Discharge Protection, 12 V Automotive Load Switch, Power-Rail OR-ing and Source Selection, Logic-Level to High-Side Level Translator, PoE (Power-over-Ethernet) Auxiliary Switch.
USB Power-Distribution High-Side Switch
The BSR315PH6327XTSA1 is well-suited as a USB VBUS high-side switch in portable and hub applications. Its -60 V VDS rating provides substantial transient headroom beyond the 5 V USB rail, the -620 mA continuous ID comfortably exceeds USB 2.0's 500 mA port current, and the P-channel topology allows direct gate control from a 3.3 V GPIO without a charge pump - significantly simplifying the BOM versus N-channel high-side alternatives. RDS(on) of 800 mOhm at full load dissipates approximately 250 mW (I^2 * R = 0.5^2 * 0.8), which is manageable in the SOT-23-3 footprint with adequate source-tab copper. The 6 nC total gate charge also enables fast turn-off (<1 us typical) for USB current-limit response.
Recomendado
Battery Reverse-Polarity / Reverse-Discharge Protection
In single-cell Li-ion and multi-cell battery packs, the BSR315PH6327XTSA1 serves as a low-loss reverse-discharge blocker placed in series with the battery negative rail. With body-diode reverse blocking at -60 V and on-state RDS(on) of 800 mOhm at -10 V VGS, the part drops less than 0.5 V at 600 mA load - far better than the discrete Schottky alternative. The P-channel gate is pulled to GND through a resistor for normal operation and can be actively pulled to the source potential to disconnect the pack. The 500 mW power rating limits continuous current to ~700 mA without heatsinking, making the part ideal for low-power IoT and wearable battery paths rather than high-current e-mobility applications.
Recomendado
12 V Automotive Load Switch
The BSR315PH6327XTSA1 is automotive-grade per Infineon's OptiMOS small-signal family marking and handles the -60 V transient envelope found on 12 V automotive buses (including load-dump surges up to 35 V). Used as a high-side switch for lamps, solenoids, or sensor rails, the part provides clean enable/disable control from a 3.3 V or 5 V MCU GPIO without a charge pump. The 176 pF input capacitance keeps gate-drive energy under 1 uJ per switching cycle, and the SOT-23-3 footprint is compatible with automotive PCB density requirements. Design tip: for inductive loads (relays, solenoids), add a flyback diode across the load because the part's avalanche rating is modest.
Recomendado
Power-Rail OR-ing and Source Selection
In redundant-power designs the BSR315PH6327XTSA1 acts as a low-loss OR-ing element between two supply rails (e.g., USB and wall adapter). Two P-channel MOSFETs with sources tied to the load and drains to the respective supplies allow the higher-voltage rail to dominate while the lower rail's body diode blocks reverse conduction. The -60 V rating provides robust transient protection and the RDS(on) of 800 mOhm results in ~50 mV drop at 60 mA load. Compared to Schottky OR-ing diodes (300-500 mV drop), the BSR315PH6327XTSA1 cuts dissipation by 5-10x - a major benefit in thermally constrained wall adapters and USB-C PD sink designs.
Recomendado
Logic-Level to High-Side Level Translator
The BSR315PH6327XTSA1 enables a simple, single-transistor level translator from a 3.3 V MCU GPIO to a 12 V or 24 V load control line. The P-channel source is tied to the high-side rail, the drain to the load, and the gate is pulled down through a resistor and driven by the GPIO; when the GPIO is low (0 V) the VGS is negative and the FET conducts, energizing the load; when the GPIO is high (3.3 V) VGS is approximately zero and the FET turns off. This topology is widely used in industrial PLC digital outputs and HVAC relay drivers. RDS(on) of 800 mOhm yields ~0.5 W dissipation at 800 mA load - tolerable in SOT-23-3 with 1 square inch of source copper.
Recomendado
PoE (Power-over-Ethernet) Auxiliary Switch
In PoE powered-device (PD) front-end designs the BSR315PH6327XTSA1 serves as an auxiliary low-side or high-side switch for housekeeping loads such as LED indicators, isolated DC-DC enable lines, or auxiliary 3.3 V rail switching. The -60 V rating far exceeds PoE's 48 V nominal / 57 V maximum, providing robust transient margin against cable discharges and ESD events. The 500 mW dissipation limit suits sub-200 mA loads like status LEDs and housekeeping rails. Note that the main PoE hot-swap FET typically requires an N-channel 100 V+ part; the BSR315PH6327XTSA1 complements, rather than replaces, the main hot-swap element.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para BSR315PH6327XTSA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | BSR315PL6327HTSA1 | BSR316PH6327XTSA1 | NTR4101PT1G | DMP3098L-7 | PMF780SN,115 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Diodes Incorporated | Nexperia |
| Package | PG-SC59-3 / SOT-23-3 | PG-SC59-3 / SOT-23-3 (same) | PG-SC59-3 / SOT-23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) |
| Drain-Source Voltage (VDS) | -60 V | -60 V | -60 V | -60 V | -30 V | -60 V |
| Continuous Drain Current (ID) | -620 mA | -620 mA | -1.4 A | -1.6 A | -4.0 A | -1.0 A |
| On-State Resistance (RDS(on)) | 800 mOhm @ -10 V | 800 mOhm @ -10 V | 500 mOhm @ -10 V | 250 mOhm @ -10 V | 50 mOhm @ -10 V | 780 mOhm @ -10 V |
| Gate Threshold (max VGS) | ±20 V | ±20 V | ±20 V | ±20 V | ±20 V | ±20 V |
| Power Dissipation (PD) | 500 mW | 500 mW | 500 mW | 400 mW | 830 mW | 500 mW |
Principais diferenciais
- Wide 60 V VDS rating provides robust transient headroom for 12 V and 24 V buses (vs DMP3098L-7)
- P-channel topology enables direct GPIO drive without charge pump (vs NTR4101PT1G)
- Lower gate charge than higher-current P-channel alternatives (vs BSR316PH6327XTSA1)
Notas de projeto
Estimated: at ID = -620 mA and VGS = -10 V, RDS(on) = 800 mOhm yields ~308 mW conduction loss (I^2*R), well within the 500 mW dissipation rating at 25 C ambient. At 85 C ambient the dissipation derates by approximately 50%, so continuous ID should be limited to ~310 mA or the source tab should be tied to >= 50 mm^2 of copper pour on a 1 oz PCB. Junction-to-ambient thermal resistance theta_JA for SC-59 / SOT-23-3 on a standard JEDEC 1S2P test board is approximately 280 C/W, so the 500 mW rating corresponds to a 140 C junction-temperature rise above ambient at 25 C.
For optimal thermal performance the SOURCE pin (pin 2) copper pad should be expanded to >= 30 mm^2 on top copper and stitched with thermal vias to inner copper planes. Place input and output bypass capacitors within 5 mm of the device to minimize parasitic inductance. Standard SOT-23-3 land pattern per IPC-7351 (SOT23-3 standard density, ~1.0 mm lead pitch) is compatible with the Infineon PG-SC59 package - no footprint change is required when migrating from other vendors' SOT-23-3 parts.
The BSR315PH6327XTSA1 is NOT a logic-level MOSFET. RDS(on) is specified at VGS = -10 V; at 3.3 V or 5 V gate drive the device is only partially enhanced and effective on-resistance can be 5-10x higher than the datasheet 800 mOhm figure. To achieve specified performance either drive the gate from a -10 V or larger rail (rare in 5 V systems) or use a small inverting bipolar stage / charge pump to generate the negative gate drive. Also note that for inductive loads (relays, solenoids) a flyback diode across the load is mandatory because the device's avalanche energy rating is limited.
The 176 pF input capacitance combined with 6 nC total gate charge means gate-rise time is dominated by the driver's source/sink current capability. For 1 us gate transition, the driver must source/sink approximately 6 mA. A standard 3.3 V GPIO (4 mA drive) is marginal; an external gate-driver transistor (e.g., a small NPN / N-channel FET) is recommended for sub-microsecond switching to control EMI in PWM or load-dump recovery applications.
Informações de conformidade
RoHS and REACH compliance confirmed per Infineon product family documentation. AEC-Q100 automotive qualification status is part-family dependent; verify specific lot qualification before automotive designs. Halogen-free status not stated in verified distributor data - marked unknown.
