DRV3255-Q1 - 48V 3-Phase Automotive Gate Driver | TI
N.º da peça: DRV3255-Q1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.4 | $114,00 |
| 100 | $10.2 | $1.020,00 |
| 500 | $9.3 | $4.650,00 |
| 1.000 | $8.45 | $8.450,00 |
DRV3255-Q1 Visão geral
A gate driver unit is a power-management IC that translates low-voltage logic signals from a microcontroller into the high-current gate signals required to switch external power MOSFETs in a three-phase inverter. Within the power-electronics hierarchy, the GDU sits between the MCU and the MOSFET bridge, providing gate charge amplification, protection logic, and system diagnostics for brushless DC (BLDC) and PMSM motor drives.
Key features include high gate drive capability (3.5-A source / 4.5-A sink peak) enabling fast switching of large parallel MOSFET arrays, a highly efficient bootstrap architecture for the high-side supply, and 90-V transient overvoltage support that protects against load-dump-style events on 48-V rails. Digital I/O pins withstand up to 75-V absolute maximum ratings, protecting the device against 12-V supply overvoltage events.
The DRV3255-Q1 integrates a highly configurable Active Short Circuit (ASC) function that short-circuits selected external MOSFETs in response to system faults, eliminating external transistors and control logic. According to TI, it was the industry's first 48-V three-phase BLDC driver to integrate active shorting on both high and low sides. Wide monitoring and diagnostic capability supports robust, functional-safety-oriented motor drive system design, making it well suited to ASIL-oriented architectures in electrified powertrain systems.
Typical applications include 48-V belt starter generators (BSG), motor generators for mild-hybrid electric vehicles (MHEV), e-turbo and e-compressor drives, and 48-V high-power traction accessories. TI reference design SLVAF39A covers driving parallel MOSFETs with this device for 350-A class output stages.
Design consideration: verify bootstrap capacitor sizing against the total gate charge of the selected MOSFETs, and confirm that the ASC pin configuration matches the required short-circuit strategy before finalizing the PCB layout.
This page synthesizes verified distributor data, drop-in alternative guidance, and practical design notes not consolidated in the manufacturer datasheet, with pricing and stock signals as of 2026-08-30.
Alternativas drop-in para DRV3255-Q1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
DRV3256-Q1
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
DRV3255-Q1 Classificações máximas e características elétricas
| Product Type | Integrated 3-Phase Gate Driver Unit (GDU) |
| Applications Bus Voltage | 48 V |
| Peak Source Gate Drive Current | 3.5 A |
| Peak Sink Gate Drive Current | 4.5 A |
| MOSFET Transient Overvoltage Support | 90 V |
| Digital I/O Absolute Maximum Voltage | 75 V |
| Number of Phases | 3 |
| Output Stage Compatibility | External NMOS power MOSFETs |
| High-Side Supply Architecture | Bootstrap |
| Active Short Circuit (ASC) | Yes, configurable on high and low side |
| Protection and Diagnostics | Wide monitoring, diagnostics, and protection feature set |
| Encapsulamento | 64-HTQFP (10x10 mm, EAP) |
| Tipo de montagem | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified (Q1) |
Guia de Configuração de Pinos do DRV3255-Q1 64-htqfp (10x10 mm, eap)
Configuração de pinos para DRV3255-Q1 (pacote 64-htqfp (10x10 mm, eap)). Este dispositivo de potência possui terminais de gate, drain e source. Para pacotes não polarizados, consulte o datasheet do fabricante para a orientação exata do pino 1 e detalhes do footprint. Aplicações comuns incluem projeto de fontes de alimentação, acionamento de motores e comutação de cargas.
Nenhum dado detalhado de pinagem disponível para DRV3255-Q1.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
DRV3255-Q1 é adequado para 6 aplicaçãos: 48-V Belt Starter Generator (BSG), Mild-Hybrid Motor Generator (MHEV), E-Turbo / E-Compressor Drives, 48-V High-Power Traction Accessories, Parallel MOSFET High-Current Inverters, 48-V Industrial and Robotics Drives.
48-V Belt Starter Generator (BSG)
In a belt starter generator system for mild-hybrid vehicles, the DRV3255-Q1 drives the three-phase MOSFET inverter that runs the BSG machine in both motor and generator modes. The 3.5-A peak source and 4.5-A peak sink gate currents switch large parallel MOSFET banks fast enough to keep switching losses acceptable at the 8-15 kHz PWM frequencies typical of BSG drives, while 90-V transient overvoltage support absorbs regenerative and load-dump events on the 48-V rail. The integrated Active Short Circuit provides the rapid fault containment that a crank-relevant drivetrain function requires. TI reference design SLVAF39A demonstrates parallel-MOSFET layouts achieving 350-A class output with this device.
Recomendado
Mild-Hybrid Motor Generator (MHEV)
For 48-V motor generators in MHEV powertrains, the DRV3255-Q1 provides the monitoring, diagnostics, and configurable protection needed for functional-safety-oriented torque generation. Its wide diagnostic feature set reports MOSFET and system faults to the vehicle ECU, while the 75-V absolute maximum ratings on digital I/O pins protect the device against 12-V supply overvoltage conditions that can occur at the harness interface. The bootstrap architecture removes the need for isolated high-side supplies, reducing component count and improving system efficiency versus optocoupler- or transformer-based high-side schemes. Dual-side Active Short Circuit gives the safety strategy a deterministic secondary failure path.
Recomendado
E-Turbo / E-Compressor Drives
Electric turbocharger and e-compressor motors are high-speed 48-V machines that demand fast, symmetric gate drive to minimize switching loss at elevated PWM frequencies. The DRV3255-Q1's 3.5-A/4.5-A peak currents and 90-V transient rating fit the dense, thermally constrained packaging of e-turbo units mounted on the engine or exhaust path, where elevated ambient temperatures and voltage transients are routine. The bootstrap high-side supply avoids bulky isolated DC-DC stages inside the compact actuator housing, and the integrated diagnostics allow the controller to detect gate-driver degradation before a catastrophic inverter failure damages the turbine assembly.
Recomendado
48-V High-Power Traction Accessories
Electric power steering pumps, coolant pumps, and active-suspension actuators moving to 48-V rails benefit from the DRV3255-Q1's combination of high gate-drive current and rich protection. The device's monitoring functions (per TI product documentation) let the ECU implement layered diagnostics for safety-relevant accessories, while Active Short Circuit provides a defined safe state if the inverter must shut down at speed. The 64-pin HTQFP with thermalpad-style heat spreading supports the continuous current levels these drives require when paired with parallel MOSFETs, as quantified in TI reference design SLVAF39A for 350-A class outputs on a 48-V bus.
Recomendado
Parallel MOSFET High-Current Inverters
When a single MOSFET per switch position cannot carry the required phase current, the DRV3255-Q1's very high 3.5-A source and 4.5-A sink gate currents allow multiple MOSFETs to be driven in parallel from one gate-driver channel without per-device gate resistors ballooning switching times. TI application note SLVAF39A ('Driving Parallel MOSFETs Using the DRV3255-Q1') documents layouts achieving 350-A class output for 48-V and up to 96-V DC-bus discussions. Key design work includes symmetric gate routing, per-branch gate resistors, and bootstrap capacitor sizing against the summed gate charge of the paralleled MOSFET array.
Recomendado
48-V Industrial and Robotics Drives
Beyond automotive, 48-V servo drives, collaborative-robot joint motors, and automated-guided-vehicle traction inverters can exploit the same core strengths: 3.5-A/4.5-A peak gate drive for low-loss switching, 90-V headroom for regenerative bus pumping, and integrated short-circuit management. Note that the DRV3255-Q1 is qualified to the automotive Q1 grade, which exceeds typical industrial requirements and simplifies dual-sourcing across automotive-industrial platforms. Its diagnostic reporting supports predictive maintenance schemes in industrial controllers, and the 64-HTQFP surface-mount package fits standard SMT assembly processes without specialized power-module handling.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para DRV3255-Q1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | DRV3256-Q1 |
|---|---|---|
| Package | 64-HTQFP (10x10 mm, EAP) | 64-HTQFP (10x10 mm) - same family package |
| Brand | Texas Instruments | Texas Instruments |
| Peak Source Gate Drive Current | 3.5 A | 3.5 A |
| Peak Sink Gate Drive Current | 4.5 A | 4.5 A |
| MOSFET Transient Overvoltage Support | 90 V | 90 V |
| Automotive Qualification | AEC-Q100 (Q1) | AEC-Q100 (Q1) |
| High-Side Supply Architecture | Bootstrap | Bootstrap |
Principais diferenciais
- Industry-first integrated dual-side Active Short Circuit (vs DRV8353SRTAR-Q1)
- Very high peak gate drive for parallel MOSFET arrays (vs DRV3201-Q1)
- Robust 90-V transient and 75-V I/O overvoltage tolerance (vs DRV3256-Q1)
Notas de projeto
Size the bootstrap capacitor against the total gate charge of the MOSFET array being driven. With parallel MOSFET banks, summed gate charge can exceed several hundred nanocoulombs per switching event, so an undersized bootstrap cap will cause high-side undervoltage lockout and erratic switching at high duty cycles. Verify bootstrap refresh behavior at near-100% duty-cycle operating points typical of BSG launch torque, per TI application guidance.
Use symmetric, short gate traces to each MOSFET in parallel arrays and place individual gate resistors per MOSFET branch to damp gate-ring oscillation. Follow TI reference design SLVAF39A, which demonstrates 350-A class parallel-MOSFET layouts with the DRV3255-Q1. Keep the gate-driver return path tightly coupled to the power loop to minimize gate-source voltage ringing during 4.5-A sink events.
Confirm the ASC (Active Short Circuit) pin configuration matches the intended short-circuit strategy before layout freeze - the wrong configuration can short phases unintentionally during fault events. Also note the 75-V absolute maximum on digital I/O pins: this provides 12-V overvoltage tolerance, but does not substitute for proper transient suppression on the low-voltage harness interface.
Estimated: gate-driver dissipation is dominated by gate-charge losses, approximately P = Qg_total * Vgs * fPWM per phase. For example, 600 nC total gate charge, 10 V gate drive, and 20 kHz PWM gives roughly 0.12 W per phase of gate-drive loss, plus quiescent and level-shifter losses. Use an adequate thermal pad connection on the 64-HTQFP (EAP) to the PCB ground plane and verify junction temperature against the datasheet thermal metrics for your airflow condition.
Informações de conformidade
TI -Q1 designation indicates automotive AEC-Q100 qualification. RoHS/REACH/lead-free/halogen-free statuses to be confirmed on the official TI product page at time of ordering.
