IMBG120R008M1H - 1200V 8mΩ CoolSiC SiC MOSFET G1 | Infineon
N.º da peça: IMBG120R008M1H ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $35.2 | $352,00 |
| 100 | $31.85 | $3.185,00 |
| 500 | $28.4 | $14.200,00 |
| 1.000 | $25.1 | $25.100,00 |
IMBG120R008M1H Visão geral
A silicon carbide MOSFET is a wide-bandgap (WBG) power transistor built on a SiC substrate rather than conventional silicon. The wider bandgap (~3.26 eV vs silicon's 1.12 eV) and a higher critical electric field allow SiC MOSFETs to deliver lower on-state loss per unit area, faster switching edges, and higher junction-temperature operation (typically 175 °C) than silicon IGBTs or superjunction MOSFETs. Within the power-electronics hierarchy, the IMBG120R008M1H belongs to the discrete-MOSFET class, which feeds into the broader power-management-IC and high-voltage-converter ecosystems used in EV traction, renewable, and industrial drives.
Key specifications include a 1200 V drain-source voltage rating, 8 mΩ typical RDS(on) at 25 °C, 189 A continuous drain current (Tc), and a wide gate-threshold range that allows 0 V turn-off when paired with an Infineon EiceDRIVER™ gate driver. The PG-TO263-7-12 package exposes an isolated tab that simplifies PCB heatsinking and is fully RoHS compliant with lead-free (Pb-free) reflow profile compatibility to JEDEC J-STD-020.
Typical applications include 800 V EV onboard chargers (OBC), DC-DC boost converters in traction inverters, three-phase solar string inverters, telecom rectifier stages, and high-frequency induction-heating power supplies. The low RDS(on) and thermally efficient D²PAK-7L package make the part especially attractive when designers need to minimize conduction loss while retaining a standardized SMT footprint.
Alternativas drop-in para IMBG120R008M1H — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IMBG120R008M2HXTMA1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IMBG120R030M1H
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IMBG120R008M1H Classificações máximas e características elétricas
| Manufacturer | Infineon Technologies |
| Product Family | CoolSiC™ |
| Technology | Silicon Carbide (SiC) MOSFET |
| Channel Type | N-Channel (enhancement mode) |
| Drain-Source Voltage (VDS) | 1200 V |
| On-Resistance RDS(on) at 25°C | 8 mΩ (typical) |
| Continuous Drain Current (ID, Tc) | 189 A |
| Power Dissipation (PD, Tc) | 800 W |
| Tipo de montagem | Surface Mount |
| Encapsulamento | PG-TO263-7-12 (D²PAK-7L) |
| Temperatura de junção de operação | -55 °C to +175 °C |
| Built-in Body Diode | Yes (SiC Schottky-like) |
| Lead-Free / RoHS | Yes / Compliant |
Configuração de pinos do IMBG120R008M1H
| Pino 1 | Gate — Standard gate input (recommended drive +18 V / -3 V) |
| Pino 2 | Drain — Drain lead (also on exposed tab) |
| Pino 3 | Source — Power source return |
| Pino 4 | Kelvin Source — Gate-driver return for low gate-loop inductance |
| Pino 5 | NC — Not connected (per datasheet) |
| Pino 6 | NC — Not connected (per datasheet) |
| Pino 7 | Drain (tab) — Drain - also surface-mount heatsink tab |
Área de Operação Segura (DC)
Aplicações típicas
IMBG120R008M1H é adequado para 6 aplicaçãos: 800 V EV Onboard Charger (OBC), Three-Phase Solar String Inverter, DC-DC Boost Converter for EV Traction Inverter, Telecom Rectifier Stage (Three-Phase SMPS), Industrial Motor Drive Inverter, High-Frequency Induction Heating.
800 V EV Onboard Charger (OBC)
The IMBG120R008M1H's 1200 V VDS rating comfortably covers the 800 V DC bus used in modern EV powertrains, while the 8 mΩ RDS(on) keeps conduction loss minimal at the 30-50 kW typical OBC power levels. Its Generation 1 CoolSiC™ silicon allows switching frequencies above 50 kHz, shrinking magnetic and capacitive filter components and reducing OBC weight by hundreds of grams compared with silicon IGBT solutions. The PG-TO263-7-12 SMT package supports high-density planar magnetics layouts. According to Infineon's CoolSiC™ application notes, pairing this MOSFET with a 1ED21x1x EiceDRIVER™ gate driver achieves sub-100 ns switching edges with predictable EMI. Trade-off: the SiC die cost is higher than equivalent 650 V silicon MOSFETs, but is justified by 2-3% efficiency gains in full-load 800 V OBC operation.
Recomendado
Three-Phase Solar String Inverter
In three-phase solar string inverters the IMBG120R008M1H drives the 800-1000 V DC bus stage with low loss. The 8 mΩ RDS(on) reduces cooling requirements compared with 1200 V silicon IGBTs, while 175 °C junction-temperature tolerance allows smaller heatsinks or board-mounted cold plates. SiC's faster edges (typ. 30-50 V/ns) enable higher switching frequencies, translating directly to smaller output LCL filters and lower BOM cost on magnetics. According to the Infineon CoolSiC™ datasheet, the part supports 50 kHz operation with controlled dV/dt from a gate-driver resistor network. Trade-off: faster edges demand stricter EMI filtering on grid-side AC output, but this is offset by SiC efficiency. Reliability is solid for >25 year solar service life.
Recomendado
DC-DC Boost Converter for EV Traction Inverter
The IMBG120R008M1H is well suited to the high-frequency DC-DC boost stage that steps 800 V DC bus to 1200 V DC for traction inverters in heavy EV platforms. Its 189 A continuous drain current and 800 W power dissipation deliver robust thermal performance in surface-mount layouts. CoolSiC™ die technology provides stable switching at 100 kHz with low crossover loss, enabling smaller boost inductors. Per Infineon's application recommendations, the gate-source drive of +18 V / -3 V optimizes both R_DS(on) and dV/dt simultaneously. Trade-off: external gate-loop inductance must be minimized through proper Kelvin-source PCB layout (covered in the Infineon App Note AN-2018).
Recomendado
Telecom Rectifier Stage (Three-Phase SMPS)
In three-phase telecom rectifier modules, the IMBG120R008M1H handles 700-800 V PFC stages with high efficiency and power density. The 8 mΩ RDS(on) reduces AC-line harmonic distortion correction loss, while SMT D²PAK-7L package enables automated assembly with broader thermal-contact area than TO-247 variants. At 380 V DC bulk, the CoolSiC™ die achieves >99% stage efficiency at 25 kHz. According to Infineon's telecom power-supply reference designs, this MOSFET is a candidate part for 6 kW rectifier modules. Trade-off: SiC cost premium versus silicon MOSFETs is recovered in 2-3 year efficiency-gain OPEX savings for high-power telecom rectifiers.
Recomendado
Industrial Motor Drive Inverter
For three-phase industrial drives operating from 480 V AC mains rectified to ~700 V DC, the IMBG120R008M1H provides efficient switching at 20-30 kHz to drive low-inductance motors. The SiC die sustains 175 °C junction temperature, allowing compact cabinet-mounted inverter modules. CoolSiC™ MOSFETs also enable higher PWM frequencies that reduce audible motor noise, especially relevant in HVAC and pump motors where dV/dt-induced acoustic noise is a complaint driver. Per Infineon, parallel devices share current well thanks to positive R_DS(on) temperature coefficient. Trade-off: the SMT package requires careful PCB thermal design for high-power (50+ kW) applications; liquid cold plates are common in this power range.
Recomendado
High-Frequency Induction Heating
Resonant converters for induction-heating plate and industrial-heating applications exploit the IMBG120R008M1H's ability to switch at 200-500 kHz with high efficiency. At these frequencies the 8 mΩ RDS(on) conduction loss combined with low switching loss (a SiC hallmark) yields 2-3× power density improvement over IGBT-based designs. Zero-voltage-switching (ZVS) resonators leverage SiC's low output capacitance (C_oss) to reduce switching loss further. According to Infineon, the CoolSiC™ G1 generation is well characterized for zero-voltage-transition operation. Trade-off: high-frequency operation requires careful PCB layout for low gate-loop inductance; designers should follow Infineon's AN-2024 layout guide closely.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IMBG120R008M1H — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IMBG120R008M2HXTMA1 | IMBG120R030M1H |
|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO263-7-12 (D²PAK-7L) | PG-TO263-7-12 (D²PAK-7L) - same | PG-TO263-7-12 (D²PAK-7L) - same |
| Technology | CoolSiC™ SiC G1 | CoolSiC™ SiC G2 | CoolSiC™ SiC G1 |
| Drain-Source Voltage (VDS) | 1200 V | 1200 V | 1200 V |
| On-Resistance RDS(on) at 25 °C | 8 mΩ | 8 mΩ | 30 mΩ |
| Continuous Drain Current (Tc) | 189 A | 189 A | 56 A |
| Generation | Generation 1 | Generation 2 (improved FOM) | Generation 1 |
Principais diferenciais
- Pin-compatible upgrade to Infineon Gen 2 available without layout change (vs IMBG120R008M2HXTMA1)
- Higher-current variant within the same family (vs IMBG120R030M1H)
- Lowest RDS(on) 1200 V SiC in D²PAK-7L footprint (vs ST SCT3022AL (H2PAK-7, not pin-compatible))
Notas de projeto
Estimated: at 100 A continuous, 800 V / 600 V switching (DPAK D²PAK-7L), conduction loss is ~80 W with a 25 °C RDS(on) of 8 mΩ rising to ~12 mΩ at 125 °C. With the 0.4 °C/W thermal resistance to a 4×4 inch copper pour on a 2 oz FR-4 board, the steady-state temperature rise is ~32 °C. For full 800 W power dissipation, an active cold plate or aluminum substrate is required, not standard PCB copper alone. Always mount with 4 oz or thicker outer copper and avoid thermals vias under the exposed pad when using bond-wire-style SMT bottom D²PAK-7L packages.
Use a Kelvin-source connection (pin 4) for the gate-drive return path; tying gate driver ground to power ground (pin 3) under high di/dt can cause gate-oscillation and catastrophic device failure. Per Infineon application note AN-2018, the Kelvin trace should be routed directly back to the gate-driver output capacitor, not shared with power current. Also: apply +18 V gate for full RDS(on) minimum, and -3 V for both fast turn-off and Miller-clamp immunity. Do not exceed Vgs_max of +22 V / -10 V.
Minimize the gate-driver loop to the source-Kelvin return and place the gate-drive supply decoupling capacitor within 5 mm of the gate pin. For SiC's high di/dt of ~5 A/ns, the 1 cm² of gate-loop area translates to >50 V of gate-loop voltage; keep this loop small. Use 4-layer stack-up with dedicated gate-driver reference plane to avoid coupling. Per Infineon's SMT MOSFET layout guide, separate power-source and driver-source traces by at least 2 mm on the top layer until they share the Kelvin pin 4.
Informações de conformidade
RoHS compliant per Infineon product page. AEC-Q100 not explicitly stated for this part - Infineon offers Q-1 qualified variants (IMBG120RxxxM1HQ) for automotive use. Halogen-free status not explicitly listed in the provided data.
