IMW120R045M1H - 1200V 45mOhm CoolSiC MOSFET | Infineon
N.º da peça: IMW120R045M1H ✓ Ativo| Qtd. | Preço unitário | Total |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
IMW120R045M1H Visão geral
A SiC power MOSFET is a voltage-controlled semiconductor switch built on silicon carbide rather than silicon. Because SiC has roughly ten times higher critical electric field strength than silicon, a SiC MOSFET can block 1200 V in a thin drift layer, yielding lower specific on-resistance, lower switching losses, and higher junction temperature capability than a comparable silicon superjunction MOSFET or IGBT. In the power-conversion hierarchy, it sits as the primary switch in hard- and soft-switching topologies such as LLC, phase-shifted full bridge, and 3-level NPC converters.
Key features of the IMW120R045M1H include very low switching losses for high-frequency operation, a benchmark gate threshold voltage of VGS(th) = 4.5 V, IGBT-compatible 15 V turn-on gate drive with 0 V turn-off, a temperature-independent turn-off switching loss characteristic, and a robust intrinsic body diode ready for synchronous rectification. Infineon also specifies fully controllable dv/dt, letting designers trade switching speed against EMI.
Technically, the trench-cell SiC structure provides a threshold-free on-state characteristic, meaning conduction begins without a sharply defined knee, which simplifies parallel operation and improves efficiency at moderate loads. Compared with silicon IGBTs at 1200 V, the absence of a fixed diode forward voltage at light load and the lack of tail current at turn-off can cut switching energy by an order of magnitude.
Typical applications include solar string and central inverters, energy storage converters, EV fast-charging infrastructure, industrial drives, and auxiliary power supplies, where 1200 V blocking, low switching loss, and reduced cooling effort directly raise efficiency and power density.
Design-wise, follow Infineon Application Note AN2018-09 when selecting positive and negative gate-source voltages, since the gate-drive window strongly influences long-term threshold-voltage stability.
This page synthesizes distributor pricing context, drop-in family alternatives, SOA guidance, and practical design notes not consolidated in the manufacturer datasheet.
Alternativas drop-in para IMW120R045M1H — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IMW120R045M1H (mesmo formato e footprint) — diferindo em Mounting Type, Package, Technology, Body Diode, Configuration.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IMW120R045M1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
AIMW120R045M1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IMW120R060M1H
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
IMW120R220M1H
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IMW120R045M1H Classificações máximas e características elétricas
| Technology | CoolSiC SiC Trench MOSFET |
| Drain-Source Voltage (VDS) | 1200 V |
| On-Resistance (RDS(on)) | 45 mOhm at Tj = 25C |
| Continuous Drain Current (ID) | 52 A at Tc = 25C |
| Dissipação de potência (Ptot) | 228 W at Tc = 25C |
| Gate Threshold Voltage (VGS(th)) | 4.5 V |
| Recommended Turn-On Gate Voltage | 15 V |
| Turn-Off Gate Voltage | 0 V |
| Configuration | Single N-channel with built-in body diode |
| Tipo de montagem | Through Hole |
| Encapsulamento | PG-TO247-3-41 (TO-247-3) |
| Qualification | Industrial grade |
| Gate Drive Compatibility | IGBT-compatible gate drive |
| dv/dt Control | Fully controllable via gate resistor |
| Body Diode | Robust, suitable for synchronous rectification |
| Turn-Off Switching Losses | Temperature independent |
| Manufacturer Recommended Operating Margin | Do not exceed 80% of maximum ratings for optimum lifetime |
Configuração de pinos do IMW120R045M1H
| Pino 1 | G — Gate - controls the MOSFET channel (drive 15 V on, 0 V off) |
| Pino 2 | D — Drain - high-voltage terminal, connected to mounting tab |
| Pino 3 | S — Source - power return terminal and gate-drive reference |
Aplicações típicas
IMW120R045M1H é adequado para 6 aplicaçãos: Solar String and Central Inverters, EV DC Fast Charging Infrastructure, Energy Storage System (ESS) Converters, Industrial Motor Drives, Auxiliary and Server Power Supplies, High-Voltage Test and Laboratory Power Systems.
Solar String and Central Inverters
Photovoltaic inverters convert DC panel or string voltage into grid-frequency AC, and the IMW120R045M1H fits the 1100 V-class DC bus directly with its 1200 V blocking rating. The 45 mOhm RDS(on) limits conduction loss in the H-bridge or 3-level legs, while near-zero tail-free switching lets designers raise switching frequency above what IGBTs allow, shrinking magnetics and heat sinks. Infineon's CoolSiC trench technology keeps turn-off losses temperature-independent, stabilizing efficiency across full outdoor operating ranges. Placed in a two-level bridge with 15 V/0 V drive and dv/dt controlled via gate resistance, it supports high power density grid-tie designs per Infineon's solar reference platforms.
Recomendado
EV DC Fast Charging Infrastructure
DC fast chargers rectify three-phase grid power and deliver hundreds of amperes at 200-1000 V to the vehicle, making the 1200 V IMW120R045M1H well suited to the power factor correction and DC/DC stages. Its 45 mOhm on-resistance limits I^2R loss at the high continuous currents typical of 150-350 kW chargers, and low switching losses enable LLC or CLLC resonant converters running in the 50-100 kHz range, reducing transformer size dramatically versus IGBT designs. The robust body diode handles dead-time commutation, and temperature-independent turn-off keeps losses predictable from cold start to full load in outdoor cabinet environments.
Recomendado
Energy Storage System (ESS) Converters
Battery energy storage systems use bidirectional DC/DC and DC/AC converters linking a high-voltage battery (typically 800-1500 V) to a DC bus or grid inverter. The IMW120R045M1H provides 1200 V blocking with 45 mOhm conduction, enabling bidirectional buck-boost or dual-active-bridge stages with high efficiency in both charge and discharge directions. Synchronous rectification is directly supported by the datasheet-rated robust body diode, so the channel carries most of the current and conduction loss stays proportional to 45 mOhm. Controllable dv/dt via the gate resistor helps meet EMI limits in residential and commercial cabinets, while industrial qualification suits continuous-duty cycling.
Recomendado
Industrial Motor Drives
Variable-frequency drives for industrial motors benefit from the IMW120R045M1H where a 800-1000 V DC bus and high efficiency are required. Its 1200 V rating covers the DC link with margin for switching overshoot, and the 45 mOhm RDS(on) reduces heat in the inverter bridge, allowing smaller heat sinks in compact drive enclosures. The IGBT-compatible 15 V turn-on / 0 V turn-off gate drive means existing IGBT gate-driver infrastructure can often be reused, easing migration from silicon. Fully controllable dv/dt protects motor insulation by limiting voltage slope at the motor terminals, and temperature-independent switching losses simplify thermal verification across load cycles.
Recomendado
Auxiliary and Server Power Supplies
High-power auxiliary supplies, telecom rectifiers, and server PSU front ends on 800 V-class rectified mains use boost PFC plus LLC stages where the IMW120R045M1H raises efficiency and power density. Very low switching losses allow PFC switching at 65-100 kHz and LLC stages even higher, cutting boost-inductor and transformer volumes. The threshold-free on-state characteristic improves light-load efficiency, important for 80 PLUS Titanium-class targets, while the 45 mOhm RDS(on) keeps full-load conduction loss manageable. Industrial qualification and the TO-247 through-hole flange simplify thermal attachment to extruded heat sinks in fan-cooled power shelves.
Recomendado
High-Voltage Test and Laboratory Power Systems
Test benches, capacitor-charging supplies, and high-voltage laboratory converters exploit the IMW120R045M1H's 1200 V blocking and fast, clean switching to build compact resonant or hard-switched stages from rectified three-phase mains. Switching-energy stability across temperature means calibration and output ripple remain consistent during long test runs, and the 4.5 V threshold provides healthy noise margin in electrically noisy lab environments. Because the part is through-hole in TO-247, prototypes can be swapped on perf-boards or bus-bar assemblies during characterization. Follow Infineon AN2018-09 gate-voltage guidance to preserve long-term threshold stability under continuous high-voltage stress.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IMW120R045M1H — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IMW120R045M1 | AIMW120R045M1 | IMW120R060M1H | IMW120R220M1H |
|---|---|---|---|---|---|
| Package | PG-TO247-3-41 (TO-247-3) | PG-TO247-3-41 - same | PG-TO247-3 - same | PG-TO247-3-41 - same | PG-TO247-3-41 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| RDS(on) at 25C | 45 mOhm | 45 mOhm | 45 mOhm | 60 mOhm | 220 mOhm |
| Gate Drive Scheme | 15 V on / 0 V off | 15 V on / 0 V off | 15 V on / 0 V off | 15 V on / 0 V off | 15 V on / 0 V off |
| Qualification Target | Industrial | Industrial | Automotive (AIM prefix) | Industrial | Industrial |
Principais diferenciais
- Latest M1H generation switching behavior (vs IMW120R045M1)
- Lowest conduction loss in the 1200 V TO-247-3 M1H family (vs IMW120R060M1H)
- Automotive drop-in path (vs AIMW120R045M1)
Notas de projeto
Gate-drive design governs reliability and loss. Drive the gate with 15 V for turn-on; 0 V turn-off is acceptable per the datasheet, but adding a negative off bias (per Infineon AN2018-09) improves dv/dt immunity in bridge legs. Use an individual gate resistor split (on/off) to tune dv/dt against EMI; the datasheet advertises fully controllable dv/dt as a feature. Keep gate loop inductance low with a Kelvin-style source return where possible, since 52 A di/dt events across shared source inductance cause spurious turn-on. Estimated: at 30 A and 45 mOhm, conduction loss alone is 40.5 W, so budget switching loss and heat-sink capability accordingly.
The 228 W dissipation rating is specified at a maintained 25C case temperature, which presumes an ideal infinite heat sink. In practice, size the heatsink from the actual loss: Estimated: 50 W dissipation with a typical TO-247 junction-to-case resistance on the order of 0.5 C/W plus interface and heatsink resistance of 0.5-1.0 C/W gives a junction rise of 50-75 C, requiring forced air above roughly 40-50 W in a 40C ambient. Infineon recommends operating below 80% of maximum ratings for lifetime optimization - derate current, power, and junction temperature accordingly. Verify actual Rth(j-c) from the datasheet thermal section before final design.
Minimize power-loop inductance: place the DC-link capacitor directly across the half-bridge drain-source nodes, and keep the drain/source bus bars broad and overlapping to cancel flux. For the through-hole TO-247, bend leads close to the body and anchor the device mechanically before soldering to avoid cracking the package under vibration. Add a small gate-source resistor (10k typical) and, in parallel leg topologies, consider separate turn-on path gate resistors per device. Keep the body diode dead time short but sufficient - the datasheet body diode is robust for synchronous rectification, but excessive reverse-recovery time still inflates loss at high bus voltage.
Informações de conformidade
Industrial-qualified product per Infineon datasheet and product page. Verified web data did not include explicit RoHS/REACH/lead-free certificate values; confirm via Infineon product page compliance documents. For automotive, use the AIMW120R045M1 family member.
