IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon
N.º da peça: IRLR9343TRPBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.96 | $0,96 |
| 10 | $0.86 | $8,60 |
| 100 | $0.74 | $74,00 |
| 500 | $0.62 | $310,00 |
| 1.000 | $0.54 | $540,00 |
| 2.000 | $0.47 | $940,00 |
IRLR9343TRPBF Visão geral
A P-channel MOSFET is a type of field-effect transistor in which the conducting channel is formed by inverting the surface of an N-type semiconductor with a negative gate-source voltage. Unlike N-channel MOSFETs that require the load to be tied to ground, P-channel MOSFETs are typically placed on the high-side of a load and switched by pulling the gate toward ground. This high-side placement eliminates the need for a charge pump or bootstrap circuit in low-voltage systems, simplifying gate drive architecture.
Key specifications include a -55 V drain-source breakdown (withstand margin above 40 V automotive rails), 105 mOhm max RDS(on) at VGS = -10 V (reducing conduction losses in class-D output stages), and a threshold voltage suitable for direct logic-level (-5 V) gate drive from typical microcontroller or analog PWM controllers. The TO-252 surface-mount package supports automated assembly while still providing a metal tab for thermal dissipation.
The device uses Infineon's IR MOSFET silicon technology, a planar HEXFET process that has been refined over decades for power-conversion robustness. The 105 mOhm on-resistance combined with the modest gate charge yields a low FOM (figure-of-merit), enabling high-frequency PWM operation without excessive driver losses. Avalanche-rated, the device tolerates unclamped inductive switching events common in motor and audio applications.
Typical applications include class-D audio amplifier output stages, automotive load and motor switching (seat modules, window lifts, mirror adjusters), DC-DC converter high-side switches, battery protection and reverse-polarity OR-ing circuits, and power-OR/redundant-rail management in telecom and computing systems.
When designing with this device, gate drive impedance matters more than peak gate voltage. A 10-100 ohm gate resistor dampens ringing caused by the package's lead inductance and the MOSFET's input capacitance; too low a value risks EMI, too high slows switching and increases switching loss.
This page synthesizes distributor pricing, drop-in cross-brand alternatives, and practical class-D design notes not found in the manufacturer datasheet.
Alternativas drop-in para IRLR9343TRPBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IRLR9343TRPBF (mesmo formato e footprint) — diferindo em Package, Technology, Total Gate Charge (Qg), FET Type, Lead-Free.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRLR9343PBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFR5505TRPBF
✅ Drop-In✓ Em estoque
$0.48 / unidade
Ver ficha técnica →VBE2610N
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRLR9343TRPBF Classificações máximas e características elétricas
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLR9343TRPBF |
| FET Type | P-Channel MOSFET |
| Technology | IR HEXFET |
| Drain-Source Voltage (VDS) | -55 V |
| Continuous Drain Current (ID) at Tc=25C | -20 A |
| On-Resistance RDS(on) max at VGS=-10V | 105 mOhm |
| Total Gate Charge (Qg) | 31 nC (typical) |
| Power Dissipation (PD) at Tc=25C | 79 W |
| Encapsulamento | PG-TO252-3 (DPAK) Surface Mount |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant |
| Lead-Free | Yes |
| Nível MSL | 1 |
| Optimized Application | Class-D audio amplifier output stages |
| Polarity | P-Channel |
Configuração de pinos do IRLR9343TRPBF
| Pino 1 | Gate — Gate control input; pull toward ground (0 V) with respect to Source to turn the P-channel MOSFET on |
| Pino 2 | Drain — Drain terminal; electrically and thermally bonded to the metal tab on the back of the DPAK package |
| Pino 3 | Source — Source terminal; reference point for gate drive; typically tied to the positive supply rail in high-side switching |
Área de Operação Segura (DC)
Aplicações típicas
IRLR9343TRPBF é adequado para 6 aplicaçãos: Class-D Audio Amplifier Output Stage, Automotive Load Switching (High-Side), DC-DC Converter High-Side Switch, Battery Protection & Reverse-Polarity OR-ing, Motor Driver H-Bridge (Low-Voltage), Power Multiplexing in Computing/Server.
Class-D Audio Amplifier Output Stage
The IRLR9343TRPBF is specifically optimized by Infineon for class-D audio amplifier output stages, where its 105 mOhm max RDS(on) and 31 nC total gate charge deliver the low conduction and switching losses required for >90% efficiency at full audio bandwidth. In a half-bridge output stage, the P-channel device sits on the high-side, eliminating the bootstrap supply required by N-channel topologies and simplifying the PWM modulator design. The -55 V VDS rating provides ample margin above the +/- 30 V typical audio bus rails. Place the device with the metal tab soldered to at least 0.5 sq-in of 2 oz copper to keep Tj within the 125C audio-grade limit.
Recomendado
Automotive Load Switching (High-Side)
Use the IRLR9343TRPBF as a high-side switch for 12 V automotive loads such as seat heaters, mirror adjusters, and lamp drivers where the P-channel device simplifies gate drive (pull to GND to turn on). The -55 V VDS rating tolerates 40 V load-dump transients per ISO 7637-2 when paired with a 30 V TVS clamp. However, this is a commercial-grade part - not AEC-Q101 qualified - so it suits non-safety automotive accessories and aftermarket modules rather than ECU-controlled safety loads. The 20 A ID rating covers most accessory current demands; for >20 A loads parallel two devices with 10 ohm gate resistors.
Recomendado
DC-DC Converter High-Side Switch
The IRLR9343TRPBF works as the high-side P-channel switch in non-isolated buck and buck-boost converters up to 30 V input, where its low RDS(on) minimizes conduction loss and its 31 nC gate charge keeps driver losses manageable at 200-500 kHz switching frequencies. In a buck converter, the P-channel device replaces an N-channel + bootstrap, saving two components and reducing the controller's BOM cost. For 24 V industrial bus inputs, the -55 V VDS provides 130% derating margin. Add a 10-100 ohm gate resistor and a small PNP pull-up on the gate to ensure clean turn-off in noisy industrial environments.
Recomendado
Battery Protection & Reverse-Polarity OR-ing
Place the IRLR9343TRPBF as a reverse-polarity protection P-channel MOSFET between a battery and its load - the device's body diode conducts during normal operation, and turning on the MOSFET (by shorting gate to source via a Zener-resistor network) eliminates the diode drop and reduces power dissipation by 80%+. In redundant-rail OR-ing circuits, two IRLR9343TRPBF devices in back-to-back configuration share load current with minimal voltage drop. The 105 mOhm RDS(on) translates to only 2.1 W dissipation at 20 A - well within the 79 W rating when properly heatsunk.
Recomendado
Motor Driver H-Bridge (Low-Voltage)
Build a low-voltage brushed DC motor H-bridge with the IRLR9343TRPBF as both high-side and low-side switches - the P-channel high-sides eliminate the need for a bootstrap circuit on each half-bridge, dramatically simplifying the gate driver. At 12-24 V brush motor voltages with peak currents up to 20 A, the IRLR9343TRPBF delivers excellent PWM control up to 50 kHz. The 79 W power dissipation rating allows sustained operation without additional heatsinking in small motors (<100 W mechanical output). Add a flyback diode across each motor terminal for inductive kick protection beyond the MOSFET's internal avalanche rating.
Recomendado
Power Multiplexing in Computing/Server
The IRLR9343TRPBF enables power-source multiplexing in server, networking, and storage systems where redundant supplies must be OR'd together. The P-channel device sits between each supply and the load bus, and a controller turns on the appropriate MOSFET based on which supply is healthy. The 105 mOhm RDS(on) at 20 A yields a 2.1 V drop and 42 W dissipation at full load - acceptable for a 12 V bus but warrants thermal verification. The DPAK package's metal tab can dissipate this power with proper copper layout, eliminating the need for an external heatsink in space-constrained 1U server form factors.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRLR9343TRPBF — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRLR9343PBF | IRFR5505TRPBF | VBE2610N |
|---|---|---|---|---|
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | VBsemi (cross-brand) |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | TO-252 (DPAK) - same footprint |
| Drain-Source Voltage (VDS) | -55 V | -55 V | -55 V | -60 V (+9% margin) |
| Continuous Drain Current (ID) at Tc=25C | -20 A | -20 A | -20 A | -30 A (+50% margin) |
| On-Resistance RDS(on) max at VGS=-10V | 105 mOhm | 105 mOhm | 110 mOhm (older generation) | 61 mOhm (-42% lower loss) |
| Optimized Application | Class-D audio amplifier | Class-D audio amplifier (same) | General purpose P-channel | General purpose P-channel |
Principais diferenciais
- Class-D audio-optimized switching characteristics (vs IRFR5505TRPBF)
- Better on-resistance than same-brand drop-in (vs IRFR5505TRPBF)
- Same-brand family compatibility (vs VBE2610N (VBsemi))
Notas de projeto
Estimated: At 10 A continuous drain current and RDS(on) = 105 mOhm at VGS=-10V, conduction loss is P_D = I^2 x R = 100 x 0.105 = 10.5 W. The PG-TO252 (DPAK) package has theta_JC of approximately 1.6 C/W, giving a junction temperature rise above the case of 17 C - within safe limits if the case is held at 100 C. The case-to-ambient thermal resistance is ~50 C/W on 1 sq-in of 2 oz copper, which means the junction will rise 525 C above ambient at 10.5 W - clearly unacceptable. Solder the metal tab to AT LEAST 1 square inch of 2 oz copper (preferably 2 sq-in or more) to keep Tj within the 150 C silicon limit at continuous full load.
For the P-channel IRLR9343TRPBF, place a 10-100 ohm resistor between the gate driver output and the gate pin to damp the LC resonance formed by the gate-driver trace inductance and the MOSFET's Ciss (~1.5 nF). At 31 nC total gate charge, peak gate-drive current during turn-on is approximately Qg/t_rise - at a 30 ns rise time this is ~1 A, which is well within typical PWM controller capability. Always include a pull-down resistor (10-100 kOhm) from gate to source to ensure the MOSFET stays off when the controller is unpowered or in reset.
Critical pitfalls when using the IRLR9343TRPBF: (1) Forgetting that this is a P-channel device - the gate must be PULLED LOW relative to source to turn on, not driven high as with N-channel; (2) Driving the gate above the absolute maximum VGS rating (typically +/- 20 V) destroys the oxide - never apply a positive gate-source voltage; (3) Assuming the drain tab is isolated - on the DPAK package, the metal tab is electrically connected to pin 2 (drain), so the PCB copper pour MUST be at drain potential; (4) Overlooking avalanche energy - while the device is avalanche-rated, sustained unclamped inductive switching beyond the datasheet E_AS value will destroy the die.
Informações de conformidade
RoHS compliant per Infineon product page and DigiKey listing. Lead-free (PBF suffix indicates Pb-free terminal finish). Not AEC-Q101 qualified - commercial-grade part, not intended for automotive safety-critical applications. REACH compliance per EU distributor documentation.
