IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon
MPN: IRLR9343TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.96 | $0.96 |
| 10 | $0.86 | $8.60 |
| 100 | $0.74 | $74.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.54 | $540.00 |
| 2,000 | $0.47 | $940.00 |
Drop-in alternatives for IRLR9343TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRLR9343PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFR5505TRPBF
β Drop-Inβ In Stock
$0.48 / Unit
View Datasheet βVBE2610N
β Drop-Inπ Reference alternative (not in catalog)
IRLR9343TRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLR9343TRPBF |
| FET Type | P-Channel MOSFET |
| Technology | IR HEXFET |
| Drain-Source Voltage (VDS) | -55 V |
| Continuous Drain Current (ID) at Tc=25C | -20 A |
| On-Resistance RDS(on) max at VGS=-10V | 105 mOhm |
| Total Gate Charge (Qg) | 31 nC (typical) |
| Power Dissipation (PD) at Tc=25C | 79 W |
| Package | PG-TO252-3 (DPAK) Surface Mount |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | 1 |
| Optimized Application | Class-D audio amplifier output stages |
| Polarity | P-Channel |
IRLR9343TRPBF Pin Configuration
| Pin 1 | Gate β Gate control input; pull toward ground (0 V) with respect to Source to turn the P-channel MOSFET on |
| Pin 2 | Drain β Drain terminal; electrically and thermally bonded to the metal tab on the back of the DPAK package |
| Pin 3 | Source β Source terminal; reference point for gate drive; typically tied to the positive supply rail in high-side switching |
Safe Operating Area (DC)
Typical Applications
IRLR9343TRPBF is suitable for 6 applications: Class-D Audio Amplifier Output Stage, Automotive Load Switching (High-Side), DC-DC Converter High-Side Switch, Battery Protection & Reverse-Polarity OR-ing, Motor Driver H-Bridge (Low-Voltage), Power Multiplexing in Computing/Server.
Class-D Audio Amplifier Output Stage
The IRLR9343TRPBF is specifically optimized by Infineon for class-D audio amplifier output stages, where its 105 mOhm max RDS(on) and 31 nC total gate charge deliver the low conduction and switching losses required for >90% efficiency at full audio bandwidth. In a half-bridge output stage, the P-channel device sits on the high-side, eliminating the bootstrap supply required by N-channel topologies and simplifying the PWM modulator design. The -55 V VDS rating provides ample margin above the +/- 30 V typical audio bus rails. Place the device with the metal tab soldered to at least 0.5 sq-in of 2 oz copper to keep Tj within the 125C audio-grade limit.
Recommended
Automotive Load Switching (High-Side)
Use the IRLR9343TRPBF as a high-side switch for 12 V automotive loads such as seat heaters, mirror adjusters, and lamp drivers where the P-channel device simplifies gate drive (pull to GND to turn on). The -55 V VDS rating tolerates 40 V load-dump transients per ISO 7637-2 when paired with a 30 V TVS clamp. However, this is a commercial-grade part - not AEC-Q101 qualified - so it suits non-safety automotive accessories and aftermarket modules rather than ECU-controlled safety loads. The 20 A ID rating covers most accessory current demands; for >20 A loads parallel two devices with 10 ohm gate resistors.
Recommended
DC-DC Converter High-Side Switch
The IRLR9343TRPBF works as the high-side P-channel switch in non-isolated buck and buck-boost converters up to 30 V input, where its low RDS(on) minimizes conduction loss and its 31 nC gate charge keeps driver losses manageable at 200-500 kHz switching frequencies. In a buck converter, the P-channel device replaces an N-channel + bootstrap, saving two components and reducing the controller's BOM cost. For 24 V industrial bus inputs, the -55 V VDS provides 130% derating margin. Add a 10-100 ohm gate resistor and a small PNP pull-up on the gate to ensure clean turn-off in noisy industrial environments.
Recommended
Battery Protection & Reverse-Polarity OR-ing
Place the IRLR9343TRPBF as a reverse-polarity protection P-channel MOSFET between a battery and its load - the device's body diode conducts during normal operation, and turning on the MOSFET (by shorting gate to source via a Zener-resistor network) eliminates the diode drop and reduces power dissipation by 80%+. In redundant-rail OR-ing circuits, two IRLR9343TRPBF devices in back-to-back configuration share load current with minimal voltage drop. The 105 mOhm RDS(on) translates to only 2.1 W dissipation at 20 A - well within the 79 W rating when properly heatsunk.
Recommended
Motor Driver H-Bridge (Low-Voltage)
Build a low-voltage brushed DC motor H-bridge with the IRLR9343TRPBF as both high-side and low-side switches - the P-channel high-sides eliminate the need for a bootstrap circuit on each half-bridge, dramatically simplifying the gate driver. At 12-24 V brush motor voltages with peak currents up to 20 A, the IRLR9343TRPBF delivers excellent PWM control up to 50 kHz. The 79 W power dissipation rating allows sustained operation without additional heatsinking in small motors (<100 W mechanical output). Add a flyback diode across each motor terminal for inductive kick protection beyond the MOSFET's internal avalanche rating.
Recommended
Power Multiplexing in Computing/Server
The IRLR9343TRPBF enables power-source multiplexing in server, networking, and storage systems where redundant supplies must be OR'd together. The P-channel device sits between each supply and the load bus, and a controller turns on the appropriate MOSFET based on which supply is healthy. The 105 mOhm RDS(on) at 20 A yields a 2.1 V drop and 42 W dissipation at full load - acceptable for a 12 V bus but warrants thermal verification. The DPAK package's metal tab can dissipate this power with proper copper layout, eliminating the need for an external heatsink in space-constrained 1U server form factors.
Recommended
Recommended Products Summary
Engineering reference data for IRLR9343TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLR9343PBF | IRFR5505TRPBF | VBE2610N |
|---|---|---|---|---|
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | VBsemi (cross-brand) |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | TO-252 (DPAK) - same footprint |
| Drain-Source Voltage (VDS) | -55 V | -55 V | -55 V | -60 V (+9% margin) |
| Continuous Drain Current (ID) at Tc=25C | -20 A | -20 A | -20 A | -30 A (+50% margin) |
| On-Resistance RDS(on) max at VGS=-10V | 105 mOhm | 105 mOhm | 110 mOhm (older generation) | 61 mOhm (-42% lower loss) |
| Total Gate Charge (Qg) | 31 nC | 31 nC | 38 nC (older, slower) | [DATA_NEEDED: VBE2610N Qg] |
| Power Dissipation (PD) at Tc=25C | 79 W | 79 W | 79 W | [DATA_NEEDED: VBE2610N PD] |
| Optimized Application | Class-D audio amplifier | Class-D audio amplifier (same) | General purpose P-channel | General purpose P-channel |
Key Differentiators
- Class-D audio-optimized switching characteristics (vs IRFR5505TRPBF)
- Better on-resistance than same-brand drop-in (vs IRFR5505TRPBF)
- Same-brand family compatibility (vs VBE2610N (VBsemi))
Design Notes
Estimated: At 10 A continuous drain current and RDS(on) = 105 mOhm at VGS=-10V, conduction loss is P_D = I^2 x R = 100 x 0.105 = 10.5 W. The PG-TO252 (DPAK) package has theta_JC of approximately 1.6 C/W, giving a junction temperature rise above the case of 17 C - within safe limits if the case is held at 100 C. The case-to-ambient thermal resistance is ~50 C/W on 1 sq-in of 2 oz copper, which means the junction will rise 525 C above ambient at 10.5 W - clearly unacceptable. Solder the metal tab to AT LEAST 1 square inch of 2 oz copper (preferably 2 sq-in or more) to keep Tj within the 150 C silicon limit at continuous full load.
For the P-channel IRLR9343TRPBF, place a 10-100 ohm resistor between the gate driver output and the gate pin to damp the LC resonance formed by the gate-driver trace inductance and the MOSFET's Ciss (~1.5 nF). At 31 nC total gate charge, peak gate-drive current during turn-on is approximately Qg/t_rise - at a 30 ns rise time this is ~1 A, which is well within typical PWM controller capability. Always include a pull-down resistor (10-100 kOhm) from gate to source to ensure the MOSFET stays off when the controller is unpowered or in reset.
Critical pitfalls when using the IRLR9343TRPBF: (1) Forgetting that this is a P-channel device - the gate must be PULLED LOW relative to source to turn on, not driven high as with N-channel; (2) Driving the gate above the absolute maximum VGS rating (typically +/- 20 V) destroys the oxide - never apply a positive gate-source voltage; (3) Assuming the drain tab is isolated - on the DPAK package, the metal tab is electrically connected to pin 2 (drain), so the PCB copper pour MUST be at drain potential; (4) Overlooking avalanche energy - while the device is avalanche-rated, sustained unclamped inductive switching beyond the datasheet E_AS value will destroy the die.
Compliance Information
RoHS compliant per Infineon product page and DigiKey listing. Lead-free (PBF suffix indicates Pb-free terminal finish). Not AEC-Q101 qualified - commercial-grade part, not intended for automotive safety-critical applications. REACH compliance per EU distributor documentation.
