IRLR9343TRPBF vs IRFR5505TRPBF Comparação
Comparação detalhada lado a lado de IRLR9343TRPBF por Infineon e IRFR5505TRPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRLR9343TRPBF | IRFR5505TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,47 | $0,48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLR9343TRPBF | — |
| FET Type | P-Channel MOSFET | — |
| Technology | IR HEXFET | IR MOSFET (HEXFET 5th generation) |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | -72 A |
| On-Resistance RDS(on) max at VGS=-10V | 105 mOhm | 110 mOhm |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: max VGS rating] | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | 31 nC (typical) | 21.3 nC |
| Power Dissipation (PD) at Tc=25C | 79 W | — |
| Encapsulamento | PG-TO252-3 (DPAK) Surface Mount | TO-252AA (DPAK), surface mount |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | [DATA_NEEDED: Tj min/max operating range] | — |
| Status RoHS | Compliant | Compliant (PBF suffix) |
| Lead-Free | Yes | Yes (PBF suffix) |
| Nível MSL | 1 | — |
| Optimized Application | Class-D audio amplifier output stages | — |
| Polarity | P-Channel | P-Channel |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -18 A |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Rise Time (tr) | — | [DATA_NEEDED: tr] |
| Fall Time (tf) | — | [DATA_NEEDED: tf] |
| Maximum Power Dissipation (PD) at TC=25C | — | 57 W |
| Temperatura de junção de operação | — | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | — | 2.2 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 50 C/W (typical, DPAK on 1 oz copper) |