K6F4016U6E-EF55 - 256Kx16 4Mb Low-Power SRAM 55ns | Samsung
N.º da peça: K6F4016U6E-EF55 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $3.45 | $3,45 |
| 10 | $3.05 | $30,50 |
| 100 | $2.45 | $245,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.75 | $1.750,00 |
K6F4016U6E-EF55 Visão geral
A Static RAM (SRAM) is a type of volatile semiconductor memory that stores each bit in a pair of cross-coupled inverters (a flip-flop) rather than a capacitor, giving it infinite read/write endurance and zero refresh requirement. The K6F4016U6E-EF55 belongs to the asynchronous SRAM category, where read/write operations are controlled by the chip enable (/CE), write enable (/WE), and output enable (/OE) signals without an internal clock. SRAM sits in the memory hierarchy between DRAM (higher density but needs refresh) and register files (faster but lower density), and is preferred in systems where deterministic access time, low power, and high reliability outweigh density cost.
Key features include a wide 2.7 V to 3.3 V Vcc operating range, low standby current typical of full-CMOS 6T cell design, three-state common I/O, fully static operation requiring no clock or refresh, and CMOS- and TTL-compatible I/O levels. Byte-wise control via upper-byte (/UB) and lower-byte (/LB) signals enables 8-bit and 16-bit access on the same device, while the 48-CSP package offers a small footprint suited to space-constrained handheld and embedded boards.
Typical applications include handheld and battery-operated terminals, industrial controllers and PLCs, metering and instrumentation data buffers, networking line cards, automotive infotainment buffers, and other embedded designs where 4 Mbit of non-volatile-friendly scratch memory is required. Designers choose the trio: 55 ns access makes the device compatible with most low-to-mid-speed microcontrollers without wait generation, and the wide 2.7 V to 3.3 V range allows direct connection to a single Li-ion or 3.3 V regulated rail.
When designing with this device, observe the derating for output loading (lumped vs distributed capacitive loads) and follow the recommended decoupling scheme. Place a 0.1 uF ceramic bypass capacitor as close as possible to the Vcc ball, and add a bulk 1 uF to 10 uF capacitor if multiple SRAMs share the supply rail. The chip-scale package also requires IPC-7351-compliant land pattern with NSMD pads for reliable assembly.
This page synthesizes distributor pricing, drop-in alternates, and practical design considerations that are not present in the bare Samsung datasheet, including a side-by-side same-family comparison and cross-brand SRAM substitutes.
Alternativas drop-in para K6F4016U6E-EF55 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K6F4016U6E-BF55
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K6F4016U6E-EF70
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
CY62146ELL-45ZXI
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
AS6C4016-55ZIN
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IS61WV6416DBLL-10TLI
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K6F4016U6E-EF55 Classificações máximas e características elétricas
| Tipo de memória | Asynchronous SRAM (Static RAM) |
| Memory Organization | 256K x 16 (4 Mbit) |
| Process Technology | Full CMOS |
| Supply Voltage (Vcc) | 2.7 V to 3.3 V |
| Access Time (tAA) | 55 ns / 70 ns |
| Temperatura de operação | Industrial (-40C to +85C) |
| Encapsulamento | 48-ball CSP / TFBGA |
| Largura do barramento de dados | 16-bit (common I/O, byte-controlled via /UB, /LB) |
| I/O Interface | CMOS / TTL compatible, three-state outputs |
| Refresh Requirement | None (fully static) |
| Endurance | Unlimited read/write cycles |
| Tipo de montagem | Surface Mount |
Guia de Configuração de Pinos do K6F4016U6E-EF55 48-ball csp / tfbga
Configuração de pinos para K6F4016U6E-EF55 (pacote 48-ball csp / tfbga). Este CI digital inclui GPIO, interfaces de comunicação (UART, SPI, I2C) e pinos de alimentação. Consulte o datasheet do fabricante para funções alternativas dos pinos e opções de configuração. Essencial para projeto de sistemas embarcados e layout de PCB.
Nenhum dado detalhado de pinagem disponível para K6F4016U6E-EF55.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
K6F4016U6E-EF55 é adequado para 6 aplicaçãos: Industrial PLC Working Memory, Handheld and Portable Terminal Buffer Memory, Metering and Instrumentation Data Logging, Networking Equipment Lookup Tables, Automotive Infotainment Buffer, Embedded Sensor Hub Memory.
Industrial PLC Working Memory
The K6F4016U6E-EF55 fits industrial PLC working memory because its 256Kx16 density provides 512 KB of scratch RAM for ladder-logic state, recipe data, and process-variable tables. The 2.7 V to 3.3 V supply matches typical 3.3 V PLC backplane rails directly without level shifters, while the 55 ns tAA comfortably satisfies MCU external-bus interfaces at peripheral speeds up to ~18 MHz with zero wait states. Per Samsung datasheet timing, the industrial -40C to +85C operating range covers factory-floor cabinet environments, and unlimited read/write endurance suits the high-cycle PLC scan loop.
Recomendado
Handheld and Portable Terminal Buffer Memory
The K6F4016U6E-EF55 suits handheld terminals because the 48-ball CSP package delivers a tiny footprint ideal for battery-powered barcode scanners, payment terminals, and portable data loggers. The 2.7 V to 3.3 V supply range overlaps the Li-ion cell voltage under load, eliminating the need for an extra regulator, while Samsung full-CMOS 6T cell technology keeps active and standby currents low for long battery life. The 55 ns access time enables responsive transaction logging; per the Samsung datasheet, /CE-based power-down places the device in microampere-class standby to extend idle shelf time.
Recomendado
Metering and Instrumentation Data Logging
The K6F4016U6E-EF55 is well suited to metering and instrumentation data logging where 4 Mbit of asynchronous buffer captures time-series samples before forwarding to a host. The 55 ns tAA keeps the buffer transparent to the ADC sampling pipeline without inserting wait states on the host bus, and the unlimited read/write endurance means log overwrite loops do not degrade cell lifetime. The wide 2.7 V to 3.3 V supply and CMOS-TTL I/O allow direct connection to 3.3 V precision ADCs and instrumentation MCUs; per Samsung datasheet, byte control via /UB and /LB supports 8-bit and 16-bit transfers in the same design.
Recomendado
Networking Equipment Lookup Tables
The K6F4016U6E-EF55 fits networking line cards and access equipment that store routing, MAC, or ACL lookup tables in fast local memory. The 55 ns access time keeps route lookups deterministic versus the cache-miss path on DRAM-backed TCAMs, while the 256Kx16 organization maps well to 32K-entry x 16-bit route tables common in small-office routers. Per the Samsung datasheet, full-CMOS 6T cells tolerate continuous read cycles at industrial temperatures; the 48-CSP package keeps board area low in dense line-card layouts.
Recomendado
Automotive Infotainment Buffer
The K6F4016U6E-EF55 is suitable for automotive infotainment buffers where head-unit MCUs require scratch memory for audio frame buffering, navigation tile caches, and display frame composition. The industrial temperature range of -40C to +85C tolerates cabin environments, while 2.7 V to 3.3 V operation matches 3.3 V regulated infotainment rails. Per the Samsung datasheet, unlimited read/write endurance handles the constant overwrite cycles typical of audio-video buffer pools, and the 55 ns access time keeps MCU bus utilization low even at peripheral speeds around 18 MHz.
Recomendado
Embedded Sensor Hub Memory
The K6F4016U6E-EF55 fits embedded sensor hub designs where multiple sensors stream into a buffer before the host MCU processes the data. The 4 Mbit density accommodates 64K samples of 16-bit sensor data, while 55 ns tAA keeps the memory transparent to the bus at typical sensor-hub peripheral speeds. Per the Samsung datasheet, the industrial -40C to +85C temperature range and CMOS TTL-compatible I/O enable direct connection to 3.3 V sensor-hub MCUs; the 48-CSP package suits space-constrained wearables and IoT sensor boards.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K6F4016U6E-EF55 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K6F4016U6E-BF55 | K6F4016U6E-EF70 | CY62146ELL-45ZXI | AS6C4016-55ZIN | IS61WV6416DBLL-10TLI |
|---|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Infineon | Alliance Memory | ISSI |
| Package | 48-CSP / TFBGA | 48-CSP / TFBGA (same) | 48-CSP / TFBGA (same) | TSOP-44 | TSOP-44 | TSOP-44 |
| Density | 4 Mbit (256Kx16) | 4 Mbit (256Kx16) | 4 Mbit (256Kx16) | 4 Mbit (256Kx16) | 4 Mbit (256Kx16) | 4 Mbit (64Kx16, 16-bit wide alternative) |
| Access Time (tAA) | 55 ns | 55 ns | 70 ns | 45 ns | 55 ns | 10 ns |
| Supply Voltage | 2.7 V to 3.3 V | 2.7 V to 3.3 V | 2.7 V to 3.3 V | 2.2 V to 3.6 V | 2.7 V to 3.6 V | 2.4 V to 3.6 V |
| Operating Temperature | Industrial (-40C to +85C) | Industrial (-40C to +85C) | Industrial (-40C to +85C) | Industrial (-40C to +85C) | Industrial (-40C to +85C) | Industrial (-40C to +85C) |
| Process Technology | Full CMOS | Full CMOS | Full CMOS | CMOS | CMOS | CMOS |
| Refresh Requirement | None (static) | None (static) | None (static) | None (static) | None (static) | None (static) |
Principais diferenciais
- Industrial temperature range in a small 48-CSP package (vs CY62146ELL-45ZXI)
- Wide 2.7 V to 3.3 V supply directly compatible with 3.3 V MCUs (vs AS6C4016-55ZIN)
- Samsung full-CMOS 6T cell design with proven low standby current (vs IS61WV6416DBLL-10TLI)
Notas de projeto
The K6F4016U6E-EF55 ships in a 48-ball Chip Scale Package that demands a JEDEC-compliant NSMD land pattern per IPC-7351. Place a 0.1 uF X7R ceramic bypass capacitor as close as possible to each Vcc ball, and add a 1 uF to 10 uF bulk capacitor on the same supply rail. For multi-SB designs, isolate Vcc to each SRAM with a ferrite bead to prevent switching noise coupling between devices. Estimated: with 0.1 uF within 2 mm of the Vcc ball, target impedance at 100 MHz is below 0.5 ohm on a 4-layer PCB.
Match the trace lengths of the 16-bit /IO bus to within +/- 5 mm to minimize skew on parallel reads, and add a 22 ohm to 33 ohm series resistor near the SRAM output if the bus length exceeds 50 mm. The /CE, /OE, and /WE control signals should be terminated at the MCU side to prevent ringing. Per the Samsung datasheet, tOH (output hold time) is short, so the MCU must latch data on the same rising edge for reliable 55 ns operation. Estimated: at 50 mm FR4 trace, propagation delay is approximately 0.5 ns per mm.
Do not leave any I/O pin floating when /CE is high - per the Samsung datasheet, floating I/O can draw additional supply current through the input stage. Tie unused /UB or /LB to active level when only 16-bit or only 8-bit access is used in the design. Also note that the -EF55 suffix denotes 55 ns speed; selecting the wrong speed grade (e.g., -EF70) introduces 27% longer tAA and may violate MCU wait-state budgets. The 48-CSP package is moisture-sensitive and requires MSL handling per JEDEC J-STD-033 before reflow.
Informações de conformidade
Compliance details not present in web snippets; consult the manufacturer datasheet and lot certificate for definitive values.
