MRFE6S9200HR3 - 880MHz 58W RF Power LDMOS | NXP
N.º da peça: MRFE6S9200HR3 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $78.5 | $78,50 |
| 10 | $72.4 | $724,00 |
| 50 | $65.9 | $3.295,00 |
| 100 | $58.75 | $5.875,00 |
| 500 | $52.3 | $26.150,00 |
MRFE6S9200HR3 Visão geral
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a transistor technology optimized for high-power, high-frequency amplification. LDMOS sits in the broader taxonomy of power MOSFET -> discrete semiconductor -> RF transistor -> RF power amplifier device. Compared with bipolar power transistors, LDMOS offers higher gain, better thermal stability, easier broadband matching, and superior robustness into severe output mismatches (high VSWR), making it the workhorse technology for cellular base-station power amplifiers since the 1990s.
Key features include a 66 V drain-source voltage rating, 21 dB typical power gain, broadband response from HF through 1000 MHz, and an integrated ceramic NI-880H-2L flange package that bolts directly to a heatsink. The transistor's lateral structure minimizes parasitic feedback and supports high-efficiency Class AB, Class C, and Doherty amplifier implementations. Its 50 V gate breakdown and enhancement-mode threshold simplify bias network design.
Architecturally, the MRFE6S9200HR3 employs NXP's HV6E LDMOS process with a thin epitaxial drift region to balance breakdown voltage and on-resistance. This produces high drain efficiency (typically 30-35% in W-CDMA) and excellent linearity under digital modulation. The ceramic NI-880H package uses a direct copper-bonded flange with low thermal resistance, enabling continuous-wave and pulsed operation at full rated power.
Typical applications include 900 MHz GSM/EDGE and W-CDMA base-station final-stage power amplifiers, UHF TV transmitters, industrial RF heating, and military/aerospace L-band and UHF links. It is also widely deployed in two-way land-mobile radios and digital broadcast boosters operating in the 700-1000 MHz range.
When designing with the MRFE6S9200HR3, ensure the heatsink thermal design keeps junction below 200C at full power, and verify gate bias sequencing to avoid thermal runaway during turn-on. Source impedance matching at the fundamental and second harmonic is critical for adjacent-channel leakage ratio (ACLR) compliance in W-CDMA.
This page synthesizes distributor stock, application-circuit guidance, and same-package drop-in alternatives sourced from NXP cross-reference documentation - information not found in the manufacturer datasheet alone.
Alternativas drop-in para MRFE6S9200HR3 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com MRFE6S9200HR3 (mesmo formato e footprint) — diferindo em Mounting Type, Technology, Transistor Type, Lead Free Status, Operating Mode.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MRFE6S9200HSR3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRFE6S9201HR3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRFE6S9135HR3
✅ Drop-In✓ Em estoque
Consulte o preço
Ver ficha técnica →MRFE6S9125NR1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRFE6S9200HR3 Classificações máximas e características elétricas
| Tipo de transistor | N-Channel LDMOS (RF Power) |
| Technology | Enhancement-mode LDMOS (HV6E) |
| Frequency | 880 MHz (test), broadband up to 1000 MHz |
| Drain-Source Voltage (Vdss) Rated | 66 V |
| Test Supply Voltage | 28 V |
| Test Quiescent Current | 1.4 A |
| Output Power (Avg) | 58 W (W-CDMA) |
| Power Gain | 21 dB at 880 MHz |
| Encapsulamento | NI-880H-2L ceramic air-cavity |
| Tipo de montagem | Chassis / flange mount, SMD variant 5.08 mm height |
| Lead Free Status | Lead Free (per datasheet) |
| Input Capacitance (Ciss) | 557.27 pF at 28 V |
| Operating Mode | Class AB, Class C, Doherty |
| Target Application | W-CDMA base-station final stage |
| Status RoHS | Compliant |
Configuração de pinos do MRFE6S9200HR3
| Pino 1 | Gate (G) — RF input gate; DC bias feed for quiescent current setting |
| Pino 2 | Drain (D) — RF output drain; connects to 28 V supply through matching network |
| Pino Flange | Source (S) — Source contact on copper flange base; bolt to heatsink for thermal and electrical ground |
DC Área de Operação Segura
Aplicações típicas
MRFE6S9200HR3 é adequado para 6 aplicaçãos: W-CDMA Base-Station Final Stage, GSM/EDGE 900 MHz Power Amplifier, UHF Digital TV Transmitter, Industrial RF Heating, Two-Way Land Mobile Radio Repeater, Aerospace UHF/L-Band Data Link.
W-CDMA Base-Station Final Stage
The MRFE6S9200HR3 delivers 58 W average output power at 880 MHz with 21 dB gain from a 28 V rail, making it the canonical final-stage device for 900 MHz W-CDMA macro-cell base stations. Its 66 V Vdss rating and LDMOS enhancement-mode threshold simplify Doherty amplifier biasing, and the NI-880H-2L ceramic flange bolts directly to the PA heatsink for continuous duty under W-CDMA 3GPP ACLR masks. Compared with a driver-stage LDMOS, it absorbs the full PA output power and sets the system-level EVM budget.
Recomendado
GSM/EDGE 900 MHz Power Amplifier
In GSM/EDGE base-station final stages, the MRFE6S9200HR3 provides 58 W average CW-class output at 880-915 MHz with the high gain (21 dB) required to drop driver-stage gain. The lateral LDMOS structure delivers the linear Class AB response needed for 8-PSK EDGE modulation, and the ceramic flange allows direct chassis mounting in macro-cell radio units. Its 66 V Vdss rating provides headroom over the 28 V nominal rail for transient spike tolerance.
Recomendado
UHF Digital TV Transmitter
DVB-T and ATSC transmitters operating in the UHF band (470-860 MHz) use the MRFE6S9200HR3 as a final-stage PA in medium-power transmitter heads. Its broadband response up to 1000 MHz simplifies band-dependent tuning, and the 58 W average rating supports DVB-T coverage of small-region transmitter footprints. The 21 dB gain reduces the driver-stage count, lowering BOM cost and improving overall transmitter efficiency.
Recomendado
Industrial RF Heating
Industrial RF heating systems at 13.56, 27.12, 40.68 MHz and ISM-band 902-928 MHz use LDMOS like the MRFE6S9200HR3 for high-CW-power generators where bipolar transistors fail prematurely. The 58 W average and 200 W+ peak capability covers plastic-welding and food-processing heating heads. The ceramic NI-880H flange withstands continuous CW operation at full rated dissipation when properly heatsunk.
Two-Way Land Mobile Radio Repeater
Land-mobile radio repeaters for public safety (450-470 MHz) and commercial 800/900 MHz bands use the MRFE6S9200HR3 as a final-stage PA in high-power repeater stations. Its 66 V breakdown and 21 dB gain support the high-CW-duty cycle of FM and P25 modulation, while the ceramic package provides the vibration tolerance required for vehicle-mounted repeater installations. Designers pair it with a driver-stage MRFE6S9135HR3 for full repeater-amplification.
Recomendado
Aerospace UHF/L-Band Data Link
Military and aerospace UHF data links in the 800-1000 MHz range use the MRFE6S9200HR3 in ruggedized PA assemblies for UAV ground stations and tactical radios. Its LDMOS technology survives high-VSWR antenna mismatches that would destroy bipolar amplifiers, and the ceramic NI-880H package tolerates the thermal cycling of airborne and field-deployed equipment. The 28 V nominal rail matches standard military power bus architectures.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MRFE6S9200HR3 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MRFE6S9200HSR3 | MRFE6S9201HR3 | MRFE6S9135HR3 | MRFE6S9125NR1 |
|---|---|---|---|---|---|
| Package | NI-880H-2L ceramic flange | NI-880H-2L SMT variant | NI-880H-2L ceramic flange | NI-880 ceramic flange | NI-880 ceramic family |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Avg, W-CDMA) | 58 W | 58 W | 100 W | 35 W | 27 W |
| Power Gain | 21 dB | 21 dB | 20 dB | 21 dB | 20 dB |
| Drain-Source Voltage (Vdss) | 66 V | 66 V | 66 V | 66 V | 66 V |
| Test Frequency | 880 MHz | 880 MHz | 880 MHz | 880 MHz | 880 MHz |
| Mounting Style | Flange bolt-down | Surface mount | Flange bolt-down | Flange bolt-down | Ceramic bolt-down |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Principais diferenciais
- Higher power in the same flange footprint (vs MRFE6S9135HR3)
- Identical die in SMT-friendly variant (vs MRFE6S9200HSR3)
- Upgrade headroom in same package (vs MRFE6S9201HR3)
Notas de projeto
Estimated: at 58 W output and ~30% drain efficiency, the MRFE6S9200HR3 dissipates roughly 130 W of heat into the flange. The NI-880H-2L package has a typical junction-to-flange thermal resistance of about 0.25 C/W, so a heatsink capable of holding the flange below 70C (junction < 175C derated, 200C absolute max) is required. Apply a thin, uniform layer of thermal compound (e.g., zinc-oxide or silver-loaded) and torque the mounting screws evenly to 1.5-2.0 in-lb to avoid ceramic cracking.
Place input and output matching networks on Rogers RO4003C or equivalent low-loss substrate (not FR-4) for 880 MHz operation. Keep gate and drain traces short and use 50 ohm microstrip with controlled impedance; add a series gate resistor of 10-50 ohm for stability and a ferrite bead on the drain supply line to suppress VHF parasitic oscillation. Ground the source flange with multiple vias to a continuous ground plane on the bottom layer, and place a 10 nF + 100 pF + 10 uF decoupling network directly at the drain lead.
Estimated: do not exceed Vds = 66 V (absolute max) under any transient condition - use a 56 V TVS diode across the drain supply. Avoid paralleling MRFE6S9200HR3 devices without matched gate-bias resistors (use individual gate resistors, not a shared divider) to suppress odd-mode oscillation. Verify bias sequencing: gate voltage must reach threshold before drain voltage ramps up; a slow drain rise can cause thermal runaway. Always include a circulator or isolator at the output to protect against antenna VSWR transients.
Informações de conformidade
RoHS compliant and lead-free per NXP datasheet marking. Not AEC-Q100 qualified (RF power transistor for industrial/aerospace, not automotive). Conflict-minerals compliance per NXP corporate policy.
