MRFE6S9200HR3 vs MRFE6S9135HR3 Comparação
Comparação detalhada lado a lado de MRFE6S9200HR3 por NXP Semiconductors e MRFE6S9135HR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L
MRFE6S9135HR3 ✓ AtivoComparação de especificações
| Parâmetro | MRFE6S9200HR3 | MRFE6S9135HR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $52,30 | $0,00 |
| Tipo de transistor | N-Channel LDMOS (RF Power) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Technology | Enhancement-mode LDMOS (HV6E) | RF Power LDMOS |
| Frequency | 880 MHz (test), broadband up to 1000 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 66 V | — |
| Test Supply Voltage | 28 V | — |
| Test Quiescent Current | 1.4 A | — |
| Output Power (Avg) | 58 W (W-CDMA) | — |
| Power Gain | 21 dB at 880 MHz | — |
| Encapsulamento | NI-880H-2L ceramic air-cavity | — |
| Tipo de montagem | Chassis / flange mount, SMD variant 5.08 mm height | Screw-mount / bolt-down flange |
| Lead Free Status | Lead Free (per datasheet) | — |
| Input Capacitance (Ciss) | 557.27 pF at 28 V | — |
| Operating Mode | Class AB, Class C, Doherty | — |
| Target Application | W-CDMA base-station final stage | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Drain-Source Voltage (Rated) | — | 66 V |
| Typical Operating Voltage | — | 28 V |
| Output Power (Pout) | — | 39 W (at 940 MHz, two-tone test) |
| Power Gain (Gps) | — | 21 dB (typical at 940 MHz) |
| Drain Efficiency | — | 63.3 % (typical at test conditions) |
| Test Current | — | 1 A |
| Operating Frequency Range | — | Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) |
| Test Frequency | — | 940 MHz |
| Package Type | — | NI-880H-2L (ceramic flange) |
| ESD Protection (HBM) | — | Class II (per JESD22-A114) |
| ESD Protection (MM) | — | Class A (per EIA/JESD22-A115) |
| ESD Protection (CDM) | — | Class IV (per JESD22-C101) |
| Lead Status | — | Lead-containing (per digchip listing) |
| Designed For | — | Broadband commercial and industrial applications up to 1000 MHz |