MRFG35010AR5 - 3.5 GHz pHEMT RF Power FET, 10dB Gain | NXP
N.º da peça: MRFG35010AR5 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $59.95 | $59,95 |
| 10 | $54.2 | $542,00 |
| 100 | $47.85 | $4.785,00 |
| 500 | $42.1 | $21.050,00 |
| 1.000 | $38.4 | $38.400,00 |
MRFG35010AR5 Visão geral
A pHEMT (pseudomorphic High Electron Mobility Transistor) is a type of heterojunction field-effect transistor built on a GaAs substrate that delivers higher frequency operation, lower noise figure, and higher power density than conventional silicon MOSFETs. pHEMT devices sit within the broader RF power transistor hierarchy: RF power transistor -> GaAs FET -> pHEMT -> microwave power device. They are widely used in the final stage of RF power amplifiers where high linearity and frequency response above 2 GHz are required.
Key features include a 3.55 GHz typical operating frequency, 12 V typical bias operation, 10 dB associated gain, 140 mA quiescent drain current, and a high-efficiency GaAs pHEMT structure that minimizes thermal losses. The NI-360HF ceramic package provides a low-inductance, low-thermal-resistance path from the die to the PCB ground and heat-sink land, which is essential for stable Class-AB amplifier operation at microwave frequencies.
Architecturally, the MRFG35010AR5 uses a single-ended N-channel pHEMT die with via-source grounding, optimized for linear amplification in OFDM-based wireless systems. Its GaAs bandgap and high electron-mobility layer yield superior gain and efficiency compared with silicon LDMOS at the same frequency, at the cost of lower breakdown ruggedness.
Typical applications include 3.5 GHz WiMAX base-station power amplifiers, fixed-wireless access CPE transmitters, point-to-point microwave links operating in the 3.4-3.8 GHz band, and driver stages in higher-power GaAs amplifier chains. The part is also used as a reference design baseline by OEMs building customer-premises equipment for last-mile broadband.
When designing with this device, bias the gate at approximately -0.5 V below pinch-off and ramp the drain voltage with proper sequencing to avoid device stress. Always provide a substantial copper ground pour beneath the ceramic flange and a low-thermal-resistance heatsink; GaAs pHEMTs are more thermally sensitive than silicon devices.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers an actionable comparison resource for sourcing and second-source decisions.
Alternativas drop-in para MRFG35010AR5 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com MRFG35010AR5 (mesmo formato e footprint) — diferindo em Configuration, Manufacturer, Mounting Type, Transistor Type.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MRFG35010MT1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MRFG35010NT1
✅ Drop-In✓ Em estoque
$25.95 / unidade
Ver ficha técnica →MRFG35010AR5 Classificações máximas e características elétricas
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Tipo de transistor | pHEMT GaAs RF Power FET (N-Channel) |
| Frequency | 3.55 GHz (typical), 3.4-3.8 GHz band |
| Drain Voltage (Vds) Rated | 15 V |
| Drain Current Rating | 2.9 A (pulsed) |
| Quiescent Drain Current (Idq) | 140 mA |
| Output Power (Pout) | 1 W (CW) |
| Power Gain | 10 dB (typical at 3.55 GHz) |
| Technology | GaAs pseudomorphic HEMT |
| Encapsulamento | NI-360HF (ceramic flange, surface mount) |
| Tipo de montagem | Surface Mount (with bolted heatsink) |
| Operating Mode | Class AB (typical RF PA) |
| Configuration | Single N-channel die |
Configuração de pinos do MRFG35010AR5
| Pino 1 | RF IN — RF input lead - connect to driver stage via matching network |
| Pino 2 | GATE — DC gate bias lead - apply -0.5 V Vgs to set 140 mA quiescent |
| Pino 3 | DRAIN — DC drain bias lead - 12 V typical operation, 15 V maximum rated |
| Pino 4 | RF OUT — RF output lead - connect to antenna via matching network and filter |
| Pino FLANGE | SOURCE / GND — Ceramic flange serves as source, RF ground, and thermal path - bolt to heatsink |
Área de Operação Segura (DC) - MRFG35010AR5
Aplicações típicas
MRFG35010AR5 é adequado para 6 aplicaçãos: 3.5 GHz WiMAX Base-Station Power Amplifier, Fixed Wireless Access CPE Transmitter, Point-to-Point Microwave Link Driver, 3.5 GHz RFID and Sensor Network Transmitter, Public-Safety 3.5 GHz Band Radio, Industrial 3.5 GHz Telemetry Link.
3.5 GHz WiMAX Base-Station Power Amplifier
The MRFG35010AR5's 3.55 GHz center frequency, 10 dB associated gain, and 1 W output power make it a strong fit for the final stage of small-cell or micro-cell WiMAX base-station power amplifiers operating in the 3.4-3.8 GHz band. The GaAs pHEMT technology provides the high linearity required for OFDM modulation, reducing ACLR (Adjacent Channel Leakage Ratio) versus silicon LDMOS in the same band. In a typical deployment the part sits after a digital predistortion (DPD) pre-driver, biased at 12 V Vds and -0.5 V Vgs to set 140 mA quiescent current. The NI-360HF ceramic flange couples efficiently to an aluminum heatsink, keeping the junction temperature within safe operating limits at 30-40% DC-to-RF efficiency.
Recomendado
Fixed Wireless Access CPE Transmitter
Customer-premises equipment for last-mile broadband typically uses a 1 W transmit chain in the 3.5 GHz band, exactly matching the MRFG35010AR5's output power and frequency profile. The pHEMT's high gain (10 dB) reduces the required drive level, simplifying the upstream modulator and DAC. Designed into a half-duplex TDD chain, the device pairs with a circulator or filter to isolate TX/RX paths. The low quiescent current of 140 mA also helps CPE designs meet stringent standby-power requirements imposed by service providers, while the single-die architecture minimizes BOM count compared with push-pull GaAs PAs.
Recomendado
Point-to-Point Microwave Link Driver
In 3.5 GHz point-to-point microwave links used by WISPs and cellular backhaul operators, the MRFG35010AR5 is well-positioned as a driver stage feeding a higher-power GaN or GaAs final amplifier. Its 1 W output comfortably excites 5-10 W final stages with margin, while the 10 dB gain reduces the required drive from the modem IC. The NI-360HF package's low-inductance source path preserves linearity under high PAPR (Peak-to-Average Power Ratio) loading typical of modern QAM modulations. Bolted to the chassis heatsink, the part maintains stable gain and phase across the -40 C to +85 C industrial temperature range.
Recomendado
3.5 GHz RFID and Sensor Network Transmitter
Long-range 3.5 GHz RFID readers and industrial sensor network gateways benefit from the MRFG35010AR5's combination of 1 W output, 10 dB gain, and GaAs efficiency. Compared with silicon solutions, the pHEMT delivers higher DC efficiency in linear operation, reducing heat dissipation in sealed enclosures. The NI-360HF package supports ruggedized IP67 housings when bolted to an external cold plate. With proper harmonic filtering (low-pass or bandpass on the output), the device meets typical ETSI EN 302 326 and FCC Part 90 mask requirements for unlicensed and lightly-licensed 3.5 GHz bands in many jurisdictions.
Recomendado
Public-Safety 3.5 GHz Band Radio
Several public-safety and utility networks in the US and EU are migrating to 3.5 GHz LTE/LMR hybrids, where the MRFG35010AR5's 1 W output and 3.4-3.8 GHz band coverage provide a useful building block for portable and vehicle-mounted radios. The pHEMT technology offers better tolerance to high VSWR mismatches than silicon LDMOS, important for hand-held antennas that are frequently detuned. Bias sequencing at 12 V Vds prevents in-rush current damage during key-down events, while the ceramic package withstands the shock and vibration typical of mobile deployments.
Recomendado
Industrial 3.5 GHz Telemetry Link
Industrial telemetry, SCADA, and remote-asset monitoring systems operating at 3.5 GHz use the MRFG35010AR5 to drive directional Yagi or patch antennas at ranges up to several kilometers. The 1 W output provides adequate link margin for NLOS (non-line-of-sight) deployments typical of urban industrial sites, while the 10 dB gain minimizes drive-circuit complexity. The GaAs pHEMT structure exhibits stable phase vs temperature, important for coherent demodulation in OFDM-based telemetry. The NI-360HF package's bolt-down flange simplifies integration into IP65 enclosures with external heatsink fins.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MRFG35010AR5 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MRFG35010MT1 | MRFG35010NT1 |
|---|---|---|---|
| Package | NI-360HF (ceramic flange) | NI-360HF (ceramic flange) - same | NI-360HF (ceramic flange) - same |
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors - same family | NXP Semiconductors - same family |
| Operating Frequency | 3.55 GHz (3.4-3.8 GHz band) | 3.55 GHz - same | 3.55 GHz - same |
| Output Power | 1 W CW | 1 W CW - same | 1 W CW - same |
| Power Gain | 10 dB typical | 10 dB typical - same | 10 dB typical - same |
| Drain Voltage Rated | 15 V max (12 V typical) | 15 V max (12 V typical) - same | 15 V max (12 V typical) - same |
| Quiescent Drain Current | 140 mA | 140 mA - same | 140 mA - same |
| Transistor Technology | GaAs pHEMT | GaAs pHEMT - same | GaAs pHEMT - same |
| Reel Quantity | 500 (AR5 suffix) | Different reel configuration | Different reel configuration |
Principais diferenciais
- Mature, well-characterized GaAs pHEMT technology at 3.5 GHz (vs MRFG35010MT1)
- Pin-compatible second source within the NXP family (vs MRFG35010NT1)
- Single-die architecture simplifies BOM and biasing (vs Push-pull GaAs PAs)
Notas de projeto
Estimated: at 12 V Vds and 1 W RF output with ~35% efficiency, the device dissipates approximately 2 W of heat. With NI-360HF ceramic package junction-to-case thermal resistance of approximately 4 C/W, junction temperature rise above the flange is about 8 C. Mount the flange to an aluminum heatsink with thermal compound (e.g., Dow Corning 340) and torque to 0.5-1.0 N-m to keep the case below +85 C in +25 C ambient. Insufficient heatsinking is the leading cause of premature failure in GaAs pHEMT designs.
Use a 4-layer FR-4 or RO4350B PCB with a continuous ground pour beneath the device and 50-ohm microstrip transmission lines on the top layer for RF input and output. Place input/output matching networks (typically 2-4 discrete L/C components each) within 3 mm of the RF leads to minimize parasitic inductance. Use ceramic COG/NP0 capacitors rather than X7R for the matching network to preserve Q at 3.5 GHz. Add a 1 kohm gate resistor and 10 kohm drain resistor for bias stability.
Do not exceed 15 V Vds - GaAs pHEMTs have lower breakdown voltage than silicon LDMOS and are easily damaged by transients on the drain supply. Sequence Vgs before Vds to prevent in-rush current; use a gate clamp to limit Vgs to -2 V maximum. Avoid reverse-biasing the gate beyond -5 V or the gate oxide can rupture. Always include an ESD protection circuit at the RF input (e.g., a shunt TVS diode) since pHEMT gates are ESD-sensitive.
Informações de conformidade
RoHS and lead-free status not explicitly stated in the retrieved data; verify with NXP or authorized distributor before use in RoHS-regulated end products. AEC-Q100 not applicable - this is a discrete RF power transistor for wireless infrastructure, not an automotive-qualified IC.
