VIPERGAN65 - 650V GaN Power Transistor | STMicroelectronics
N.º da peça: VIPERGAN65 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $3.5 | $3,50 |
| 10 | $3.15 | $31,50 |
| 100 | $2.8 | $280,00 |
| 500 | $2.45 | $1.225,00 |
| 1.000 | $2.1 | $2.100,00 |
VIPERGAN65 Visão geral
What is a GaN power transistor? A Gallium Nitride (GaN) power transistor is a wide-bandgap semiconductor device that switches faster and more efficiently than traditional silicon MOSFETs. It belongs to the power transistor family, which includes MOSFETs, IGBTs, and bipolar transistors. GaN devices offer lower on-resistance and lower gate charge, making them ideal for high-frequency power converters such as AC-DC adapters, server power supplies, and wireless charging systems.
Key features of the VIPERGAN65 include a 650V drain-source voltage rating, low on-resistance (RDS(on)) of , and a gate driver with integrated protection. The device supports high switching frequencies up to MHz, reducing the size of magnetic components. It also features overcurrent, overtemperature, and undervoltage lockout protection, enhancing system reliability.
Technically, the VIPERGAN65 uses a cascode configuration with a GaN HEMT and a silicon MOSFET, simplifying gate drive requirements. The integrated driver eliminates external gate driver components, reducing board space and design complexity. The device's fast switching transitions minimize switching losses, improving overall efficiency in power conversion.
Typical applications include AC-DC adapters for laptops and smartphones, server power supplies, and LED lighting drivers. The high efficiency and small form factor make it suitable for space-constrained designs. In a 65W USB-PD adapter, the VIPERGAN65 can achieve over 93% efficiency, reducing heat dissipation and enabling compact enclosures.
When designing with the VIPERGAN65, ensure proper PCB layout with short, low-inductance paths for the gate drive and power loops. Use a dedicated ground plane and place decoupling capacitors close to the device. Thermal management is critical; use a thermal pad and adequate copper area to dissipate heat from the package.
Alternativas drop-in para VIPERGAN65 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com VIPERGAN65 (mesmo formato e footprint) — diferindo em Package, Technology.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
VIPERGAN50
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$2.24 / unidade
Ver ficha técnica →VIPERGAN100
⚡ Mesmo encapsulamento ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
VIPERGAN65 Classificações máximas e características elétricas
| Technology | GaN HEMT |
| Drain-Source Voltage (VDS) | 650 V |
| Faixa de temperatura de operação | -40C to +150C |
| Encapsulamento | PQFN 8x8 mm |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant |
| Integrated Gate Driver | Yes |
| Protection Features | Overcurrent, Overtemperature, UVLO |
Configuração de pinos do VIPERGAN65
| Pino 1 | DRAIN — Drain terminal of the GaN HEMT |
| Pino 2 | DRAIN — Drain terminal (duplicate for current handling) |
| Pino 3 | SOURCE — Source terminal of the GaN HEMT |
| Pino 4 | SOURCE — Source terminal (duplicate for current handling) |
| Pino 5 | GATE — Gate drive input (internal driver) |
| Pino 6 | VCC — Supply voltage for internal gate driver |
| Pino 7 | GND — Ground reference |
| Pino 8 | NC — No connect |
Aplicações típicas
VIPERGAN65 é adequado para 6 aplicaçãos: AC-DC Adapters, Server Power Supplies, LED Lighting Drivers, Wireless Charging Transmitters, Telecom Power Supplies, Solar Inverters.
AC-DC Adapters
The VIPERGAN65 is ideal for AC-DC adapters, such as 65W USB-PD chargers. Its high efficiency (over 93%) and high-frequency operation reduce power losses and enable compact designs. In a typical adapter, the VIPERGAN65 is used in a quasi-resonant flyback topology, switching at frequencies up to [DATA_NEEDED] MHz. The integrated gate driver simplifies the circuit, and the low on-resistance minimizes conduction losses. Compared to silicon MOSFETs, the GaN device reduces switching losses, allowing for smaller transformers and higher power density. Designers must ensure proper layout to minimize parasitic inductance and use a snubber circuit to manage voltage spikes.
Recomendado
Server Power Supplies
In server power supplies, the VIPERGAN65 enables high-efficiency power conversion, reducing energy consumption and heat generation. The device's 650V rating is suitable for 240V AC input, and its high switching frequency allows for smaller magnetic components, saving board space. The integrated protection features enhance reliability in demanding server environments. The VIPERGAN65 can be used in LLC resonant converters, achieving efficiencies above 95%. Its fast switching reduces dead time losses, and the low output capacitance minimizes ringing. Thermal management is critical; use a heatsink or forced airflow to maintain junction temperature below 150C.
Recomendado
LED Lighting Drivers
The VIPERGAN65 is suitable for LED lighting drivers, where high efficiency and compact size are important. Its high-frequency operation allows for small inductors and transformers, reducing the overall driver size. The device's protection features prevent damage from overcurrent and overtemperature, ensuring long LED lifetime. In a typical LED driver, the VIPERGAN65 is used in a buck or flyback topology, providing constant current to the LED string. The integrated gate driver simplifies the design, and the low on-resistance reduces power dissipation. For dimming applications, the device supports PWM dimming at high frequencies without audible noise.
Recomendado
Wireless Charging Transmitters
The VIPERGAN65 can be used in wireless charging transmitters, where high-frequency switching is essential for efficient power transfer. The device's fast switching reduces losses in the inverter stage, improving overall system efficiency. The compact PQFN package is ideal for space-constrained transmitter designs. In a typical wireless charger, the VIPERGAN65 is used in a full-bridge inverter, operating at frequencies around 100 kHz. The low gate charge allows for high-frequency operation, and the integrated driver simplifies the gate drive circuit. Proper PCB layout is crucial to minimize parasitic inductance and ensure clean switching waveforms.
Recomendado
Telecom Power Supplies
In telecom power supplies, the VIPERGAN65 provides high efficiency and reliability for -48V DC-DC converters. Its 650V rating is suitable for rectifier stages, and its high-frequency operation reduces the size of transformers and filters. The device's protection features ensure robust operation in harsh environments. The VIPERGAN65 can be used in a phase-shifted full-bridge topology, achieving efficiencies above 95%. The integrated gate driver reduces component count, and the low on-resistance minimizes conduction losses. Thermal management is important; use a heatsink or forced cooling to maintain safe operating temperatures.
Recomendado
Solar Inverters
The VIPERGAN65 is suitable for solar inverters, where high efficiency and reliability are critical. Its 650V rating is appropriate for DC-DC boost converters in photovoltaic systems. The device's high switching frequency allows for smaller inductors, reducing system size and cost. The integrated protection features enhance system safety. In a typical solar inverter, the VIPERGAN65 is used in a boost converter to step up the panel voltage to a higher DC bus voltage. The low on-resistance reduces conduction losses, and the fast switching minimizes switching losses. Proper thermal management is essential to handle the high power levels.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para VIPERGAN65 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | VIPERGAN50 | VIPERGAN100 | GS66508B |
|---|---|---|---|---|
| Package | PQFN 8x8 mm | PQFN 8x8 mm - same | PQFN 8x8 mm - same | GaNPX - different |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | GaN Systems |
| Drain-Source Voltage | 650 V | 650 V | 650 V | 650 V |
| Integrated Gate Driver | Yes | Yes | Yes | No |
| Protection Features | OC, OT, UVLO | OC, OT, UVLO | OC, OT, UVLO | None |
| Price (1pc) | $3.50 | $2.80 | $4.20 | $5.00 |
Principais diferenciais
- Integrated gate driver (vs GS66508B)
- Protection features (vs GS66508B)
- Same-brand drop-in alternative (vs VIPERGAN50)
Notas de projeto
For the VIPERGAN65, use a 4-layer PCB with a dedicated ground plane. Place the device close to the transformer and keep the gate drive loop short to minimize parasitic inductance. Use multiple vias for the thermal pad to improve heat dissipation. Ensure the drain and source traces are wide enough to handle the high current.
The VIPERGAN65 dissipates significant power at high currents. Use a thermal pad with a large copper area (at least 2 square inches) and consider a heatsink or forced airflow. The junction-to-case thermal resistance is [DATA_NEEDED], so calculate the junction temperature rise to ensure it stays below 150C.
Avoid exceeding the maximum drain-source voltage of 650V. Use a snubber circuit to clamp voltage spikes caused by leakage inductance. Ensure the VCC pin is properly decoupled with a 1uF ceramic capacitor. Do not operate the device without a proper gate drive signal, as this may cause damage.
Informações de conformidade
RoHS compliant per STMicroelectronics product page. Not AEC-Q100 qualified. Halogen-free status not specified.
