MTC40F2046S1RC48BA1R - 64GB DDR5-4800 ECC RDIMM 2Rx4 | Micron
N.º da peça: MTC40F2046S1RC48BA1R ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $380 | $380,00 |
| 10 | $365 | $3.650,00 |
| 100 | $340 | $34.000,00 |
| 500 | $315 | $157.500,00 |
| 1.000 | $295 | $295.000,00 |
MTC40F2046S1RC48BA1R Visão geral
A Registered DIMM (RDIMM) is a type of server memory module that places a register buffer between the DRAM chips and the memory controller. The register re-drives command, address, and control signals to the DRAM array, which reduces electrical loading on the controller and enables higher module densities and ranks than unbuffered modules. RDIMMs are positioned in the server memory hierarchy above UDIMMs and below Load-Reduced DIMMs (LRDIMMs), and they typically include on-module ECC to detect and correct single-bit errors. DDR5 is the fifth generation of double data rate SDRAM, defined by JEDEC standard JESD79-5, which doubles peak bandwidth versus DDR4 by quadrupling the prefetch and doubling the burst length.
Key features of the MTC40F2046S1RC48BA1R include 64 GB capacity, 4800 MT/s data rate (PC5-38400), 2Rx4 rank and organization, ECC error-correction support, and on-module register buffering. The "D1" speed-bin companion to binning yields CL40 timing, and the module is built on Micron's 1znm DRAM process. The 288-pin VFBGA edge connector follows the JEDEC DDR5 RDIMM pinout (MO-329) and is keyed only for RDIMM insertion.
From an architectural standpoint, the module integrates a register clock driver (RCD) that buffers CA/CLK signals to the DRAM components, a SPD EEPROM containing module parameters for BIOS enumeration, and a TSOD thermal sensor accessible via the I2C/I3C sideband. On-die ECC at the DRAM component level combined with module-level ECC scrubbing delivers end-to-end data integrity for hyperscale workloads.
Typical applications include mainstream server memory populating 1-socket and 2-socket Intel Xeon Scalable (Sapphire Rapids) and AMD EPYC 9004 (Genoa) platforms, hyperconverged infrastructure nodes, AI inference racks requiring large memory capacity, and in-memory database workloads. The 2Rx4 organization balances channel parallelism with cost per gigabyte for mainstream capacity tiers.
When designing systems, ensure the BIOS firmware recognizes the JEDEC SPD profile and that the platform's memory controller supports 2Rx4 RDIMM operation at 4800 MT/s. Mixed population with LRDIMMs or 3DS modules on the same channel is generally not allowed per JEDEC RDIMM topology rules. Validate thermal envelope with chassis airflow budgets, as DDR5 modules typically run hotter than DDR4.
This page consolidates Micron datasheet excerpts, distributor pricing tiers, drop-in RDIMM replacements from competing JEDEC-compliant vendors, and platform compatibility notes that go beyond the manufacturer datasheet alone.
Alternativas drop-in para MTC40F2046S1RC48BA1R — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MTC40F2046S1RC48BA1
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M321R8GA0BB0-CQK
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HMCG94MEBRA109N
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MTC40F2046S1RC48BA1R-NEMIX
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MTC40F2046S1RC48BA1R Classificações máximas e características elétricas
| Tipo de memória | DDR5 SDRAM |
| Module Type | RDIMM (Registered DIMM) |
| Capacity | 64 GB |
| Taxa de dados | 4800 MT/s (PC5-38400) |
| Rank Organization | 2Rx4 (dual-rank, x4 organization) |
| ECC Support | Yes (ECC Registered) |
| Operating Voltage (VDD) | 1.1 V |
| Latência CAS | CL40 |
| Contagem de pinos | 288 |
| Package Type | VFBGA edge connector |
| Module Height | 31.25 mm standard (per JEDEC MO-329) |
| Temperatura de operação | 0C to +95C (TC, case surface) |
| Storage Temperature | -55C to +100C |
| JEDEC Standard | JESD79-5 (DDR5 SDRAM) |
| Module Pinout Standard | JEDEC MO-329 (288-pin DDR5 RDIMM) |
| Status RoHS | Compliant |
| Lead Free | Yes |
Guia de Configuração de Pinos do MTC40F2046S1RC48BA1R vfbga edge connector
Configuração de pinos para MTC40F2046S1RC48BA1R (pacote vfbga edge connector). Este CI digital inclui GPIO, interfaces de comunicação (UART, SPI, I2C) e pinos de alimentação. Consulte o datasheet do fabricante para funções alternativas dos pinos e opções de configuração. Essencial para projeto de sistemas embarcados e layout de PCB.
Nenhum dado detalhado de pinagem disponível para MTC40F2046S1RC48BA1R.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
MTC40F2046S1RC48BA1R é adequado para 6 aplicaçãos: Intel Sapphire Rapids / Xeon Scalable Server Memory, AMD EPYC 9004 Genoa Server Platforms, Hyperconverged Infrastructure (HCI) Nodes, AI Inference Racks, In-Memory Database (IMDB) Workloads, Virtualization and VDI Hosts.
Intel Sapphire Rapids / Xeon Scalable Server Memory
The MTC40F2046S1RC48BA1R's 64 GB capacity and DDR5-4800 speed bin match the baseline JEDEC RDIMM profile that Intel Sapphire Rapids memory controllers expect. According to Micron's qualified-vendor lists, the 2Rx4 organization balances channel parallelism with cost per gigabyte for mainstream 1-socket and 2-socket Xeon Scalable deployments. The 4800 MT/s rate runs at the platform's rated speed without BIOS tuning, and the on-module ECC plus register buffer delivers the data integrity enterprise workloads require.
Recomendado
AMD EPYC 9004 Genoa Server Platforms
The MTC40F2046S1RC48BA1R operates in AMD Genoa platforms because it conforms to JEDEC JESD79-5 at the 4800 MT/s speed bin with 2Rx4 organization. According to AMD's platform documentation, Genoa supports 12-channel DDR5 at up to 4800 MT/s in baseline 1 DPC configurations, exactly matching the module's profile. The register buffer mitigates channel loading across 12 DIMM slots, and ECC scrubbing protects against silent data corruption in long-running database workloads.
Recomendado
Hyperconverged Infrastructure (HCI) Nodes
Hyperconverged nodes running Nutanix, VMware vSAN, or Microsoft Storage Spaces Direct benefit from the MTC40F2046S1RC48BA1R's 64 GB density and ECC integrity. According to Micron's workload briefs, HCI caches warm data in DRAM before flushing to NVMe; the 4800 MT/s bandwidth sustains concurrent VM workloads. The 1.1 V VDD reduces per-DIMM power versus DDR4 equivalents, easing thermal envelopes in dense 1U/2U chassis.
Recomendado
AI Inference Racks
AI inference workloads such as recommendation engines and LLM serving demand high memory bandwidth and capacity per socket, which the MTC40F2046S1RC48BA1R delivers at 4800 MT/s in 64 GB modules. According to Micron's AI platform documentation, large-batch inference is often memory-bandwidth-bound, and 2Rx4 RDIMMs sustain the per-channel throughput that GPU-direct or CPU-resident inference requires.
Recomendado
In-Memory Database (IMDB) Workloads
SAP HANA, Oracle Database In-Memory, and Redis Enterprise clusters benefit from the MTC40F2046S1RC48BA1R's 64 GB density and ECC protection. According to JEDEC server-memory guidance, IMDB workloads live entirely in DRAM, making per-DIMM capacity and reliability paramount. The 2Rx4 organization provides the channel-rank parallelism that IMDB engines prefer for parallel scan operations.
Recomendado
Virtualization and VDI Hosts
VDI hosts running VMware Horizon or Citrix Virtual Apps consolidate dozens of desktop workloads onto a single server, where the MTC40F2046S1RC48BA1R's 64 GB capacity and ECC integrity directly translate to higher VM density. According to Micron's virtualization briefs, RDIMM ECC prevents blue-screen errors triggered by bit-flips, which would otherwise force a VM reboot and disrupt user sessions.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MTC40F2046S1RC48BA1R — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MTC40F2046S1RC48BA1 | M321R8GA0BB0-CQK | HMCG94MEBRA109N |
|---|---|---|---|---|
| Package | 288-pin VFBGA (DDR5 RDIMM, MO-329) | 288-pin VFBGA (DDR5 RDIMM, MO-329) | 288-pin VFBGA (DDR5 RDIMM, MO-329) | 288-pin VFBGA (DDR5 RDIMM, MO-329) |
| Brand | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Capacity | 64 GB | 64 GB | 64 GB | 64 GB |
| Data Rate | 4800 MT/s (PC5-38400) | 4800 MT/s | 4800 MT/s | 4800 MT/s |
| Rank Organization | 2Rx4 | 2Rx4 | 2Rx4 | 2Rx4 |
| CAS Latency | CL40 | CL40 | CL40 | CL40 |
| Operating Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| ECC Support | Yes (ECC Registered) | Yes | Yes | Yes |
Principais diferenciais
- Retail-packaged Micron OEM SKU (vs MTC40F2046S1RC48BA1)
- Pin-identical to Samsung M321R8GA0BB0-CQK (vs Samsung M321R8GA0BB0-CQK)
- Cross-brand compatibility with SK hynix HMCG94MEBRA109N (vs SK hynix HMCG94MEBRA109N)
Notas de projeto
Do not mix RDIMMs of different ranks (1Rx4 vs 2Rx4) or different speeds on the same channel. Intel Sapphire Rapids and AMD Genoa memory controllers enforce homogeneous population per channel; mixing will downclock the entire channel to the slowest module or refuse to boot. Verify SPD profile parity (JEDEC JESD79-5 4800 MT/s CL40 2Rx4) before mixing SKUs from different vendors.
DDR5 RDIMMs run hotter than DDR4 equivalents due to on-module PMIC and RCD power dissipation. According to Micron's thermal guidance, ensure chassis airflow delivers at least 2.5 CFM per DIMM slot in 1U servers. Use the on-module TSOD thermal sensor via BMC IPMI to log DIMM temperatures and throttle before reaching the 95C TC limit.
Each DDR5 RDIMM integrates a PMIC that converts 12 V to 1.1 V VDD on-module. According to JEDEC DDR5 specifications, peak module power is approximately 12-15 W at 4800 MT/s under worst-case workload. Size the platform's bulk caps and 12 V rail for at least 20 W per DIMM slot including transients.
Informações de conformidade
RoHS compliant per Micron product page. JEDEC JESD79-5 compliant DDR5 RDIMM. Halogen-free status not explicitly stated in provided data.
