PJA3415AE - 20V P-Channel MOSFET, ESD Protected | SOT-23 | Panjit
N.º da peça: PJA3415AE ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.36 | $3,60 |
| 100 | $0.28 | $28,00 |
| 500 | $0.21 | $105,00 |
| 1.000 | $0.17 | $170,00 |
| 3.000 | $0.14 | $420,00 |
PJA3415AE Visão geral
A P-Channel Enhancement Mode MOSFET is a type of field-effect transistor in which conduction is controlled by applying a negative gate-to-source voltage relative to the threshold. P-Channel MOSFETs sit in the power-management and discrete-semiconductor hierarchy alongside N-Channel MOSFETs, IGBTs, BJTs, and JFETs, and they are the preferred high-side switch in low-voltage (<30V) battery and USB-powered systems because the gate drive is referenced to the source and needs no charge pump or bootstrap. The enhancement-mode construction means the channel does not conduct at Vgs = 0 V, giving a normally-off safe behavior ideal for power-rail switching.
Key electrical characteristics of the PJA3415AE include low on-resistance that minimizes conduction loss during load switching, a low gate threshold that allows direct drive from 1.8V to 5V logic-level GPIOs, and integrated ESD protection on the gate pin to withstand HBM discharge events that would damage unprotected small-signal MOSFETs. The SOT-23 footprint is the industry-standard 3-pin surface-mount outline and enables hand-solderable, compact designs in mobile and handheld applications.
The -AE variant adds on-board ESD protection to the basic PJA3415 part. This means the gate oxide is shielded against human-body-model and machine-model discharge, enabling handling without special ESD precautions and improving field reliability in consumer products.
Typical applications for this part include USB load-switch and power-mux circuits in smartphones and tablets, battery protection / discharge control in single-cell Li-ion packs, notebook and ultrabook power-rail management, and portable-device load switching where space is constrained. It can also serve as a reverse-current blocking switch for OTG / 5V boost output protection.
When designing with the PJA3415AE, gate-drive timing and pull-down resistors should be considered. A 100 kohm gate-to-source resistor ensures the MOSFET stays off during MCU reset, and a 10 kohm series gate resistor dampens ringing on fast switching edges to limit EMI.
This page combines manufacturer specifications, parametric alternatives, and practical design notes not aggregated on a single sheet elsewhere, helping engineers evaluate the PJA3415AE against adjacent P-Channel MOSFETs with comparable voltage and current ratings.
Alternativas drop-in para PJA3415AE — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com PJA3415AE (mesmo formato e footprint) — diferindo em Package, RoHS Status.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
PJA3415
✅ Drop-In✓ Em estoque
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Ver ficha técnica →PJA3415A
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PJA3412-AU
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✅ Drop-In📋 Alternativa de referência (fora do catálogo)
DMG3415U-7
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PJA3415AE Classificações máximas e características elétricas
| Polarity | P-Channel |
| Drain-Source Voltage (Vdss) | -20 V |
| Continuous Drain Current (Id) | -4.3 A (Ta) |
| Power Dissipation (Pd) | 1.25 W (Ta) |
| Operating Mode | Enhancement Mode |
| ESD Protection | Yes (gate-integrated, -AE variant) |
| Encapsulamento | SOT-23 (3-pin, surface mount) |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant (per Panjit product page) |
Configuração de pinos do PJA3415AE
| Pino 1 | Gate — Gate control input (drive low to turn ON; ESD protected in -AE variant) |
| Pino 2 | Source — Source terminal (connected to load-positive rail for high-side P-Channel switching) |
| Pino 3 | Drain — Drain terminal (connects to downstream load) |
Aplicações típicas
PJA3415AE é adequado para 6 aplicaçãos: USB Load Switch / Power Mux, Single-Cell Li-Ion Battery Protection, Reverse-Current Blocking for OTG / Boost Output, Notebook / Ultrabook Power Rail Management, Portable Device Load Switching (Phone, Tablet, Wearable), Industrial Low-Voltage Module Switching.
USB Load Switch / Power Mux
The PJA3415AE sits between a 5V USB input and a downstream regulator as a high-side load switch in smartphones, tablets, and notebooks. Its P-Channel topology places the source on the 5V rail and drains to the load, so a logic-level GPIO pulling the gate low turns the device ON without any charge pump or bootstrap. The -4.3A continuous drain rating supports USB Power Delivery up to 5V/3A with comfortable margin, while the integrated gate ESD diode (in the -AE variant) survives user-touch events on the USB-C connector. Estimated: at 5V/1A load the on-resistance drop is roughly I*Rds(on); check the datasheet Rds(on) before final spec.
Recomendado
Single-Cell Li-Ion Battery Protection
The PJA3415AE is well suited as the high-side discharge control element in single-cell Li-Ion battery packs, where the -20V Vdss comfortably exceeds the 4.2V max charge voltage and the -4.3A continuous drain covers typical 1C to 2C discharge rates. The SOT-23 footprint allows the entire protection circuit to fit in small wearable and IoT battery enclosures alongside a protection IC and sense resistor. The integrated ESD diode in the -AE variant prevents gate oxide breakdown during pack-assembly handling, which reduces factory-floor failures. Estimated: at 3.7V and 2A discharge the device dissipates roughly 2A*Rds(on); reference the datasheet for Rds(on) at Vgs = 3.7V before thermal sizing.
Recomendado
Reverse-Current Blocking for OTG / Boost Output
In OTG and 5V boost configurations, the PJA3415AE serves as a reverse-current blocker that prevents the boosted 5V rail from back-feeding into the Li-Ion cell when an external USB host is plugged in. With Pin 1=Gate pulled to ground (ON) during normal OTG operation and pulled to the source rail (OFF) when external power is detected, the MOSFET isolates the two supplies at the micro-amp level thanks to its low leakage. The -20V Vdss handles 5V OTG plus inductive ringing, and the 100 kohm gate-source pull-down resistor ensures the device latches OFF during MCU reset. Estimated: at 5V/500mA OTG output, conduction loss is roughly I^2 * Rds(on); verify against datasheet Rds(on) curve.
Recomendado
Notebook / Ultrabook Power Rail Management
The PJA3415AE enables per-rail ON/OFF control of low-voltage aux rails (1.8V, 3.3V, 5V) inside ultrabooks where it is paired with a system EC and a downstream buck regulator. The P-Channel high-side configuration allows a 1.8V or 3.3V GPIO to switch a 5V or 12V supply without level-shifters, simplifying the EC firmware. Its -4.3A rating covers typical auxiliary power requirements, and the SOT-23 footprint preserves PCB area in space-constrained ultrabook mainboards. The -AE variant's gate ESD protection improves field reliability when end users access internal boards during service. Estimated: at 5V/2A the device dissipates roughly (5V-Vout)*2A; reference the datasheet before thermal analysis.
Recomendado
Portable Device Load Switching (Phone, Tablet, Wearable)
In phones, tablets, and wearables the PJA3415AE is used as an inline load switch for cameras, sensors, radios, and haptic drivers where the supply needs to be sequenced ON/OFF by the application processor. The P-Channel high-side configuration eliminates the level-shifter required by an N-Channel alternative and works directly from 1.8V APMI logic. The 100 kohm gate-source pull-down prevents accidental turn-on during processor boot, while the integrated ESD diode (in the -AE variant) reduces field return rate from user-handled wearables and tablets. Estimated: at -4.3A peak with frequent PWM load management, verify junction temperature against RthJA for the SOT-23 2oz copper board.
Recomendado
Industrial Low-Voltage Module Switching
Industrial PLCs, sensor modules, and field-bus gateways use the PJA3415AE for isolated power-rail switching of low-voltage sub-modules such as analog sensor front-ends and isolated RS-485 transceivers. The P-Channel topology allows a 24V tolerant control signal to switch 5V or 12V rails after level translation, and the SOT-23 footprint allows dense PCB layouts in DIN-rail modules. The integrated ESD protection in the -AE variant adds resilience to the field-installed ESD environment typical of industrial cabinets. Estimated: at 24V bus and 5V/1A downstream, confirm that the -20V Vdss is not exceeded by transient over-voltage events before deployment.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para PJA3415AE — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | PJA3415 | PJA3415A | PJA3416AE | NTR4101PT1G | DMG3415U-7 | SSM3J332R |
|---|---|---|---|---|---|---|---|
| Package | SOT-23 | SOT-23 - same footprint | SOT-23 - same footprint | SOT-23 - same footprint | SOT-23 - same footprint | SOT-23 - same footprint | SOT-23 - same footprint |
| Brand | Panjit | Panjit (same brand, base part) | Panjit (same brand) | Panjit (same brand) | onsemi (cross-brand) | Diodes Incorporated (cross-brand) | Toshiba (cross-brand) |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (Vdss) | -20 V | -20 V | -20 V | -30 V (higher rating) | -20 V | -20 V | -30 V (higher rating) |
| Operating Mode | Enhancement Mode | Enhancement Mode | Enhancement Mode | Enhancement Mode | Enhancement Mode | Enhancement Mode | Enhancement Mode |
Principais diferenciais
- Integrated gate ESD protection in SOT-23 (vs PJA3415 (base part))
- Higher Vdss rating than typical -20V class (vs NTR4101PT1G)
- Standard Pin 1=Gate, Pin 2=Source, Pin 3=Drain layout (vs Some cross-brand SOT-23 P-Channel parts)
Notas de projeto
Estimated: at 5V/1A load on the PJA3415AE, conduction loss is roughly I^2 * Rds(on). The total steady-state dissipation must be kept below the 1.25W Ta rating, which means the actual continuous current capability at higher ambient temperature must be linearly derated. Reference the datasheet Rds(on) curve at the actual Vgs drive voltage before final thermal analysis. Below 5V gate drive, expect Rds(on) to rise sharply.
Always include a 100 kohm pull-down resistor between gate and source on the PJA3415AE. Without this resistor, the gate can float during MCU reset and partially turn ON, creating unexpected current flow into the downstream load. Additionally, add a small gate series resistor (10 kohm typical) to dampen ringing on fast switching edges and limit EMI from the gate-source capacitance.
The PJA3415AE is rated 1.25W on a 1-inch FR-4 2oz copper board per the datasheet note. In real-world dense boards with limited copper area, this rating may need substantial derating. Use a thermal copper pad under the drain tab to spread heat to the PCB ground plane. Estimated: at 1W steady dissipation on a tightly-routed dense PCB, the junction temperature can climb to 80-100C above ambient depending on layout.
For the SOT-23 footprint, place the gate resistor as close as possible to the gate pin to limit parasitic trace inductance. Keep the source trace short to minimize L*di/dt ringing during turn-off events. The integrated ESD diode on the -AE variant protects the gate, but a TVS on the drain is still recommended for hot-plug or inductive load applications.
Informações de conformidade
RoHS and REACH compliance per Panjit product family. Not AEC-Q100 qualified - this is a consumer-grade MOSFET. For automotive applications, select a part with explicit AEC-Q100 grade.
