PVI5080NSPBF - Single-Channel Photovoltaic Isolator 8-SMD | Infineon
N.º da peça: PVI5080NSPBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $5.41 | $5,41 |
| 10 | $4.87 | $48,70 |
| 100 | $4.05 | $405,00 |
| 500 | $3.42 | $1.710,00 |
| 1.000 | $2.89 | $2.890,00 |
PVI5080NSPBF Visão geral
A photovoltaic isolator (PVI) is a solid-state optocoupler whose output stage is a monolithic photovoltaic generator rather than a phototransistor, BJT, or triac. When the input LED is energized, the monolith converts the optical flux back into a low-current DC voltage that can be used as a floating bias supply. This places PVIs in the same functional family as gate-drive optocouplers and solid-state relays, but with the unique ability to deliver a self-powered floating rail for gate charge, eliminating the need for an isolated bias supply on the high-side.
Key features include 4000 Vrms input-to-output isolation, an open-circuit output voltage of approximately 8 V (sufficient for standard-threshold power MOSFETs and most IGBTs), a typical short-circuit current of 10 µA per channel, and a 50 mA maximum continuous forward input current. The integrated fast turn-off network accelerates the discharge of the gate capacitance when the input is removed, reducing turn-off delay in switched-mode designs. The 8-SMD (modified 8-pin SOIC-style) footprint supports standard SMT reflow and allows the part to replace electromechanical relays in many industrial switching applications.
Internally the part combines an AlGaAs infrared LED with a monolithically integrated photovoltaic diode array and a switching MOSFET that provides active pull-down for fast turn-off. The novel photovoltaic generator construction allows the output stage to sit at a completely floating potential relative to the input, which is the property that makes the part useful as a high-side driver or as a floating bias source.
Typical applications include solid-state relay (SSR) front-ends, high-side MOSFET/IGBT gate drive, industrial controls, load distribution, current-to-voltage conversion, and custom solid-state relay assemblies where galvanic isolation between low-voltage logic and a switched mains or bus rail is required.
When designing with this part, account for the very low output current capability (microampere range). The PVI is intended to charge a MOSFET gate to threshold, not to deliver sustained load current; for anything beyond gate-charge drive, buffer the output with a discrete driver stage.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single reference for evaluation and supply-chain planning.
Alternativas drop-in para PVI5080NSPBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
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✅ Drop-In📋 Alternativa de referência (fora do catálogo)
PVI1050NSPBF
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
PVI5100NSPBF
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
PVI5080NS-TPBF
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
TLP3906(TPL,E(O
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
LCA110
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
PVI5080NSPBF Especificações
| Product Type | Photovoltaic Isolator (Optocoupler) |
| Number of Channels | 1 |
| Configuração de saída | Photovoltaic (DC output, floating) |
| Contact Form | SPST-NO (1 Form A) |
| Open-Circuit Output Voltage | 8 V (typical 9 V short-circuit) |
| Load Voltage Max | 8 V DC |
| Short-Circuit Output Current | 10 µA (typical) |
| Forward Current (If) Max | 50 mA |
| Isolation Voltage | 4000 Vrms |
| Encapsulamento | 8-SMD (modified 8-pin SMT) |
| Tipo de montagem | Surface Mount |
| Relay Terminals | SMD |
| Status RoHS | Compliant (Pb-Free suffix) |
Configuração de pinos do PVI5080NSPBF
| Pino 1 | NC — Not connected (per datasheet) |
| Pino 2 | LED+ — Input LED anode |
| Pino 3 | LED- — Input LED cathode |
| Pino 4 | NC — Not connected (per datasheet) |
| Pino 5 | NC — Not connected (per datasheet) |
| Pino 6 | V+ — Photovoltaic output positive |
| Pino 7 | V- — Photovoltaic output negative |
| Pino 8 | VOUT — Photovoltaic output (floating DC) |
Aplicações típicas
PVI5080NSPBF é adequado para 6 aplicaçãos: Solid-State Relay (SSR) Front-End, High-Side MOSFET Gate Drive, IGBT Gate Drive (Low-Side), Industrial Control Isolation, Load Distribution Modules, Current-to-Voltage Conversion.
Solid-State Relay (SSR) Front-End
The PVI5080NSPBF is the canonical front-end for solid-state relays that must switch AC mains or DC bus rails from a low-voltage microcontroller. The 8 V open-circuit output is sufficient to drive the input of a triac (e.g., BTA16) or the gate of a back-to-back MOSFET pair, while the 4000 Vrms isolation barrier lets the MCU sit safely on the logic side. The internal fast-turn-off MOSFET accelerates commutation, which reduces the dv/dt-induced false triggering that plagues SSR designs. Unlike a discrete optotransistor plus bias supply, the PVI eliminates the need for an isolated 5 V or 15 V rail on the load side, cutting BOM cost and PCB area in industrial relay-replacement modules.
Recomendado
High-Side MOSFET Gate Drive
In high-side N-channel MOSFET switching, the gate must be driven above the source by 10 V or more while sitting at a floating potential. The PVI5080NSPBF's floating photovoltaic output naturally delivers a gate-referenced voltage without an isolated bias supply or bootstrap diode. The 8 V open-circuit output is adequate for logic-level MOSFETs (Vth around 1 to 2.5 V) and the internal fast-turn-off network discharges the gate capacitance quickly when the LED is de-energized. This topology is widely used in motor-control half-bridges, DC load switches, and floating-supply power stages where the designer wants the simplicity of an optocoupler with the self-power of a bootstrap.
Recomendado
IGBT Gate Drive (Low-Side)
For low-side IGBT switching in motor drives, induction heaters, or inverter stages, the PVI5080NSPBF provides 4000 Vrms isolation between the logic-level gate-driver input and the IGBT emitter. The 8 V output is sufficient for IGBTs with Vge(th) in the 4 to 6 V range, though a buffer stage is recommended if full +15 V Vge is required for minimum Vce(sat). The integrated fast turn-off clamps the gate below Vge(th) when the input is removed, preventing half-on conduction during fault conditions. Compared to gate-drive transformers, the PVI is smaller, has no duty-cycle restriction, and provides DC-correctness.
Recomendado
Industrial Control Isolation
PLC digital outputs, process-control I/O modules, and safety-interlock circuits all need galvanic isolation between the field wiring (24 V or 230 V) and the backplane logic. The PVI5080NSPBF provides 4000 Vrms of reinforced isolation in a compact 8-SMD package, allowing designers to build IEC 61131-2 compliant digital outputs without a separate isolated DC-DC converter. The photovoltaic output can directly drive a logic-level MOSFET that switches the field-side load, or feed a buffer stage for higher current. The wide operating temperature range and surface-mount construction suit DIN-rail module designs.
Recomendado
Load Distribution Modules
In aircraft, telecom, and process-control load distribution units, multiple high-side switches are often driven from a centralized controller over a long isolation barrier. The PVI5080NSPBF fits this role as a per-channel gate driver that presents a low-impedance floating output to the gate of each load-side MOSFET. Because the output is electrically isolated and self-powered, dozens of PVI channels can be paralleled without ground-loop concerns, simplifying PCB layout in 8-, 16-, and 32-channel load cards. The 8-SMD package allows dense placement and standard SMT reflow, important for high-volume aerospace and telecom manufacturing.
Recomendado
Current-to-Voltage Conversion
In some precision current-sensing front-ends, a photovoltaic isolator's linear output-versus-input characteristic can be exploited to build a galvanically isolated transconductance amplifier. The PVI5080NSPBF's photovoltaic output is roughly proportional to input LED current over a limited range, so an op-amp feedback loop on the primary side can linearize the conversion. While bandwidth and accuracy are far below dedicated isolation amplifiers, this topology is useful in low-bandwidth, high-voltage monitoring applications such as battery-stack monitoring, photovoltaic string monitoring, and ground-fault detection.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para PVI5080NSPBF — comparação, orientação de projeto e informações de conformidade.
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Comparação com alternativas
| Parâmetro | Este produto | PVI5080NPBF | PVI1050NSPBF | PVI5100NSPBF | TLP3906(TPL,E(O | LCA110 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Toshiba | IXYS |
| Package | 8-SMD | 8-DIP | 8-SMD | 8-SMD | 8-SMD | 8-SMD |
| Open-Circuit Output Voltage | 8 V | 8 V | 12 V | 8 V | 7.5 V | MOSFET Ron 8 ohm (no VOC) |
| Isolation Voltage | 4000 Vrms | 4000 Vrms | 4000 Vrms | 4000 Vrms | 3750 Vrms | 3750 Vrms |
| Forward Current Max | 50 mA | 50 mA | 50 mA | 50 mA | 50 mA | 50 mA |
| Output Type | Photovoltaic | Photovoltaic | Photovoltaic | Photovoltaic (dual) | Photovoltaic | MOSFET (SSR) |
| RoHS / Lead-Free | Yes (PbF suffix) | Yes (PbF suffix) | Yes (PbF suffix) | Yes (PbF suffix) | Yes | Yes |
Principais diferenciais
- Self-powered floating DC output eliminates isolated bias supply (vs Phototransistor optocouplers (e.g., 4N35))
- Higher isolation voltage (4000 Vrms) than most cross-brand alternatives (vs TLP3906 (Toshiba) / LCA110 (IXYS))
- Integrated fast turn-off network (vs Discrete photovoltaic isolator implementations)
Notas de projeto
Estimated: The PVI5080NSPBF outputs only 10 µA of short-circuit current, which is enough to charge a small MOSFET gate but NOT to deliver sustained load current. Designers who mistakenly treat the PVI as a bias supply will see the output voltage collapse under load. For sustained drive current, follow the PVI with a discrete MOSFET buffer stage (e.g., a BSS138 or 2N7002) whose gate is driven by the PVI and whose drain drives the actual load.
Maintain the package's minimum creepage and clearance on the PCB to preserve the 4000 Vrms isolation rating. For 8-SMD, Infineon's datasheet recommends at least 8 mm of clearance between the input-side and output-side copper pours. Place the input resistor and bypass capacitor as close to pins 2 and 3 as possible, and route the photovoltaic output traces (pins 6, 7, 8) as short and as wide as practical to minimize parasitic resistance that would further reduce the already-low output current.
The PVI's output rise and fall times are dominated by the gate capacitance of the driven MOSFET and the available charge current. For switching frequencies above a few kHz, calculate the gate charge Qg and confirm that the average current required (Qg * fsw) does not exceed what the PVI can deliver from its photovoltaic source. If it does, the output voltage will droop and the driven MOSFET will operate in its linear region, causing excessive dissipation.
Informações de conformidade
PbF suffix indicates lead-free finish. Originally released by International Rectifier, now under Infineon brand. Not AEC-Q100 qualified (industrial-grade optocoupler).
