FOD8314TR2V - 1.0A Gate Drive Optocoupler, 6-SOP | onsemi
N.º da peça: FOD8314TR2V ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.55 | $25,50 |
| 100 | $2.18 | $218,00 |
| 500 | $1.86 | $930,00 |
| 1.000 | $1.62 | $1.620,00 |
| 2.500 | $1.41 | $3.525,00 |
FOD8314TR2V Visão geral
An optocoupler (also called an opto-isolator or photocoupler) is a semiconductor device that transmits electrical signals between two isolated circuits using light. Gate-drive optocouplers are a specialized class that integrate a high-current output stage capable of charging and discharging the gate capacitance of power transistors. Within the broader taxonomy, gate-drive optocouplers sit between standard logic optocouplers and digital isolators: they provide reinforced galvanic isolation (necessary for high-voltage safety), fast propagation delay, and high peak output current - all critical for driving power semiconductors in motor drives, solar inverters, and industrial power supplies.
Key features include 1.0 A peak output current, 5000 Vrms isolation voltage, a wide operating supply range on the output side, under-voltage lockout (UVLO) for safe IGBT operation, and high common-mode transient immunity (CMTI) typically exceeding 20 kV/s. The stretched SO6 footprint offers 8 mm creepage/clearance, which is important for 600 V and 1200 V power stages where PCB contamination or humidity can degrade standard SO-6 footprints over time. The integrated UVLO prevents the gate driver from operating the IGBT in its partially-on linear region, which would otherwise cause excessive switching losses and thermal runaway.
The FOD8314 uses onsemi's proprietary LED + CMOS/DMOS output architecture. The input LED is an AlGaAs type optimized for high-speed modulation and long lifetime; the output side uses a high-voltage driver stage capable of sourcing and sinking peak gate currents of 1.0 A. Typical propagation delay is in the 200-500 ns range, depending on supply voltage and load, which is well within the requirements for IGBT modules switching at up to 20 kHz. The device is qualified for industrial and motor-control environments where reinforced isolation, high CMTI, and reliable gate drive strength are mandatory.
Typical applications include motor-control inverters (driving IGBT modules in 3-phase bridges), solar power inverters, industrial servo drives, and induction-heating power stages. The combination of 8 mm creepage and high output current makes it well suited to drive 600 V/1200 V class IGBT modules directly without external buffer stages.
When designing with this part, ensure that the output-side bypass capacitor is placed within a few millimeters of the VCC and VEE pins, and that the gate resistor is selected to limit the peak gate current within the SOA. The stretched-body footprint has a different PCB land pattern from a standard SO-6 - PCB layouts are not interchangeable without redesign.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical gate-drive design notes that go beyond the manufacturer datasheet's typical application circuits.
Alternativas drop-in para FOD8314TR2V — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com FOD8314TR2V (mesmo formato e footprint) — diferindo em Manufacturer, Package, Part Number, Peak Output Current, RoHS Status.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
FOD8314T
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
FOD8314
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
FOD8314R2
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
ACPL-P314
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
TLP350
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
FOD8314TR2V Especificações
| Part Number | FOD8314TR2V |
| Manufacturer | onsemi (ON Semiconductor) |
| Product Type | Gate Drive Optocoupler (Logic Output Optocoupler) |
| Peak Output Current | 1.0 A |
| Output Current Rating (per DigiKey) | 1.5 A |
| Isolation Voltage | 5000 Vrms |
| Number of Channels | 1 |
| Encapsulamento | Stretched Body SOP-6 (6-SOP) |
| Creepage / Clearance | 8 mm (stretched-body variant) |
| Tipo de saída | Gate driver (push-pull CMOS/DMOS output stage) |
| Input Drive Type | AlGaAs LED (high-speed) |
| Propagation Delay (typical) | 200 ns to 500 ns |
| Under-Voltage Lockout (UVLO) | Yes (integrated) |
| Common-Mode Transient Immunity (CMTI) | >= 20 kV/us (typical) |
| Faixa de temperatura de operação | -40C to +100C (industrial) |
| Tipo de montagem | Surface Mount |
| Nível MSL | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant |
| Lead-Free | Yes |
| Packaging | Tape & Reel (TR2 = 750 pcs/reel per onsemi convention) |
Configuração de pinos do FOD8314TR2V
| Pino 1 | VCC — Output-side positive supply (typically 15-30 V for IGBT drive) |
| Pino 2 | GND1 / NC — Input-side ground reference (verify against datasheet pin map) |
| Pino 3 | VIN+ — LED anode (input-side) |
| Pino 4 | VIN- — LED cathode (input-side) |
| Pino 5 | VOUT — Gate drive output (to IGBT/MOSFET gate) |
| Pino 6 | VEE — Output-side negative supply (typically 0 V or -10 V) |
Aplicações típicas
FOD8314TR2V é adequado para 6 aplicaçãos: Industrial Motor-Control Inverters, Solar Power Inverters, Industrial Servo Drives, Induction Heating Power Stages, Uninterruptible Power Supplies (UPS), EV Charging Station Power Modules.
Industrial Motor-Control Inverters
The FOD8314TR2V directly drives IGBT modules in 3-phase inverter bridges for industrial motor drives. Its 1.0 A peak output current is sufficient to charge and discharge the gate capacitance of 600 V/1200 V class IGBT modules (typical Qg = 1-3 uC) within a few hundred ns. The 5000 Vrms isolation meets IEC 61800-5-1 reinforced-insulation requirements, while the stretched 8 mm creepage/clearance geometry reduces PCB contamination risk in high-humidity industrial environments. Integrated UVLO prevents the IGBT from operating in its linear region during low VCC conditions, eliminating shoot-through failure in 3-phase bridges.
Recomendado
Solar Power Inverters
The FOD8314TR2V drives the IGBT or MOSFET power stage in solar string inverters and central inverters, where reinforced isolation between the low-voltage control side and the high-voltage DC bus is mandatory. Its 5000 Vrms isolation and 8 mm creepage exceed the requirements of IEC 62109-1 for PV converters. The 1.0 A peak output supports direct gate drive of high-current SiC MOSFET modules when used with reduced gate resistor values. The integrated UVLO is critical during grid-fault ride-through events when the DC bus sags below nominal and the auxiliary supply droops.
Recomendado
Industrial Servo Drives
Servo drives require precise IGBT switching at 10-20 kHz with very low dead-time distortion. The FOD8314TR2V's 200-500 ns propagation delay (depending on bias) is consistent with this switching frequency and enables tight timing control. The 1.0 A peak output drives 50-100 A class IGBT modules used in servo amplifiers without external buffers. The 8 mm creepage footprint supports the 600 V DC bus typical of AC servo systems. CMTI of >= 20 kV/us rejects the high dV/dt noise generated by the IGBT switching transitions and prevents false triggering.
Recomendado
Induction Heating Power Stages
Induction-heating inverters operate at 20-200 kHz with IGBTs at high di/dt and dV/dt. The FOD8314TR2V's high CMTI (>= 20 kV/us) is essential for rejecting the high-frequency noise from the resonant tank circuit. The 1.0 A peak output current drives the IGBT gate capacitance with fast turn-on and turn-off transitions, reducing switching losses. The 5000 Vrms isolation safely separates the user-facing control panel from the resonant tank. Integrated UVLO prevents the IGBT from operating in linear mode during resonant-startup transients when VCC sags.
Recomendado
Uninterruptible Power Supplies (UPS)
Online UPS systems use an IGBT-based inverter stage to convert DC battery voltage to AC mains output. The FOD8314TR2V drives the IGBTs in this inverter with 1.0 A peak output and 5000 Vrms isolation between the battery-side high voltage and the low-voltage control logic. The integrated UVLO protects the IGBTs during battery brown-out events. The stretched 8 mm footprint supports the 400 V DC bus typical of 3-phase UPS systems. The device's high CMTI rejects the switching noise from the IGBT bridge, ensuring clean gate signals.
Recomendado
EV Charging Station Power Modules
Level 2 and DC fast-charging stations use IGBT or SiC MOSFET power stages that the FOD8314TR2V can drive directly. The 5000 Vrms isolation meets the reinforced-insulation requirements of IEC 61851-1 for EV chargers. The 1.0 A peak output supports SiC MOSFETs when paired with appropriate gate resistors, taking advantage of SiC's fast switching for higher efficiency. The stretched SOP-6 footprint with 8 mm creepage handles the high-humidity environments of outdoor charging stations. The integrated UVLO protects the power stage during grid-fault events.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para FOD8314TR2V — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | FOD8314T | FOD8314 | FOD8314R2 | ACPL-P314 | TLP350 |
|---|---|---|---|---|---|---|
| Package | Stretched SOP-6 (8 mm creepage) | Stretched SOP-6 (8 mm creepage) - same | Optimized SOP-6 (shorter body) | Stretched SOP-6 (8 mm creepage) - same | Stretched SOP-6 (8 mm creepage) | SOP-6 (standard) |
| Brand | onsemi | onsemi | onsemi | onsemi | Broadcom | Toshiba |
| Peak Output Current | 1.0 A | 1.0 A | 1.0 A | 1.0 A | 1.0 A | 2.0 A |
| Isolation Voltage | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms | 3750 Vrms |
| Creepage / Clearance | 8 mm | 8 mm | < 8 mm (optimized footprint) | 8 mm | 8 mm | Standard SOP-6 |
| Integrated UVLO | Yes | Yes | Yes | Yes | Yes | No |
| Output Stage | DMOS (push-pull) | DMOS (push-pull) | DMOS (push-pull) | DMOS (push-pull) | CMOS (rail-to-rail) | DMOS (push-pull) |
| Propagation Delay (typ.) | 200-500 ns | 200-500 ns | 200-500 ns | 200-500 ns | ~300 ns | ~500 ns |
Principais diferenciais
- Stretched-body package achieves 8 mm creepage without external insulation (vs Standard SO-6 footprint (TLP350))
- Integrated UVLO prevents IGBT partial turn-on (vs TLP350 (no UVLO))
- 1.0 A peak output directly drives medium-power IGBT modules (vs Standard optocouplers (e.g., 4N25, 6N137))
- AlGaAs LED input provides fast switching and long lifetime (vs GaAs LED input (older generations))
Notas de projeto
The stretched-body SOP-6 footprint provides 8 mm creepage and clearance, but the land pattern differs from a standard SO-6. Do not reuse a standard SO-6 PCB footprint - the body length is longer and pins are positioned differently. Use the onsemi-recommended land pattern from the FOD8314 datasheet, which accounts for both package body length and pin pitch. The exposed pad on the bottom (if present on the variant) must be soldered to a copper pour to meet the rated isolation voltage.
Place the VCC bypass capacitor (typically 1 uF ceramic + 10 uF electrolytic) within 3 mm of pins 1 and 6 (VCC and VEE). Insufficient decoupling causes VCC droop during gate-charge events, triggering the UVLO and causing IGBT partial turn-on. Use a low-ESR ceramic (X7R) for high-frequency bypass; the electrolytic handles the peak gate-charge current. A gate resistor of 10-33 ohm between pin 5 (VOUT) and the IGBT gate controls the peak gate current within the 1.0 A SOA.
The FOD8314 has CMTI of >= 20 kV/us, which is sufficient for most IGBT applications switching up to 1200 V class at 20 kHz. For SiC MOSFET applications with dV/dt exceeding 50 kV/us, consider digital isolators (e.g., ADuM4135) instead. Keep the input-side LED drive traces short and routed away from the output-side high-voltage traces to minimize coupling. If false triggering occurs at high dV/dt, add a 1-10 nF capacitor between pin 5 (VOUT) and VEE to filter high-frequency common-mode noise.
The FOD8314TR2V's stretched SOP-6 package has a thermal resistance (theta_JA) of approximately 150-200 C/W, depending on PCB copper area. At continuous output current of 50 mA (typical for 20 kHz switching into 100 nC Qg), power dissipation is around 50-100 mW, which is well within the thermal limit. However, during fault conditions or short-circuit events, the output stage may dissipate significantly more power. Ensure the PCB copper pour on VCC and VEE pins provides adequate thermal relief.
Common design pitfalls with the FOD8314 series include: (1) reusing a standard SO-6 land pattern (the stretched body requires the onsemi-recommended pattern); (2) omitting the VCC bypass capacitor or placing it more than 5 mm from the pins; (3) failing to verify UVLO threshold for the specific IGBT module - some IGBTs require 12 V UVLO, others 15 V; (4) overlooking the creepage distance requirement for the specific end-product standard (IEC 61800-5-1, IEC 62109-1, IEC 61851-1). Always validate the design against the target safety standard's insulation coordination requirements.
Informações de conformidade
RoHS compliant and lead-free per onsemi product page and distributor listings (DigiKey, Mouser). Not AEC-Q100 qualified - this is an industrial-grade optocoupler, not automotive. For automotive applications, consider AEC-Q100 qualified alternatives in onsemi's portfolio.
