RMLV0816BGSD-4S2#AC0 - 8Mb Advanced LPSRAM | Renesas | TSOP-II 52
N.º da peça: RMLV0816BGSD-4S2#AC0 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $5.62 | $5,62 |
| 10 | $5.18 | $51,80 |
| 100 | $4.67 | $467,00 |
| 500 | $4.21 | $2.105,00 |
| 1.000 | $3.78 | $3.780,00 |
RMLV0816BGSD-4S2#AC0 Visão geral
A low-power SRAM (LPSRAM) is a type of volatile static random-access memory that retains data without refresh cycles and consumes very low standby current, making it the preferred choice for battery-powered or always-on subsystems. Within the broader memory hierarchy, LPSRAM sits between small on-chip MCU SRAM and larger DRAM, filling the role of fast, byte-addressable working memory. Compared to DRAM, LPSRAM eliminates the need for periodic refresh, simplifies board design, and improves immunity to bit errors caused by particle hits, at the cost of lower density per die.
Key features of the RMLV0816BGSD-4S2 include a wide 2.4V–3.6V single-supply range, 45 ns access time, byte-control via UB#/LB# pins for x16 operation, support for x8 / x16 bus width selection, and very low standby current. The 52-TSOP II footprint is the industry-standard pinout for 8-Mbit word-wide SRAM, allowing it to replace legacy parallel SRAMs from Cypress, ISSI, and Alliance on existing PCB layouts. The Advanced LPSRAM cell technology keeps active current low while delivering fast read/write cycles for data logging or boot-loader scratchpad use.
Internally, the die uses a six-transistor (6T) SRAM cell with CMOS I/O, including a chip-enable (CE#), write-enable (WE#), output-enable (OE#), and upper/lower byte select (UB#/LB#) for flexible bus sizing. The wide voltage range is achieved through on-chip charge-pump-free regulation, so no external VCCQ or VPP rail is required. The 45 ns access time is sufficient for direct connection to most microcontrollers and low-end microprocessors without wait-state insertion at ≤33 MHz, which covers typical MCU-class applications.
Typical applications for the RMLV0816BGSD-4S2 include industrial control data buffers, metering and instrumentation scratch memory, networking router packet buffers, automotive infotainment working memory, and battery-backed data retention when paired with an external supercapacitor or coin cell. The wide 2.4V–3.6V range also suits USB, Bluetooth, and Zigbee module working memory.
When designing with this part, ensure that decoupling (0.1 µF + 10 µF bulk) is placed within 5 mm of VCC, and respect the data retention voltage (typically 2.0V) if you intend to operate from a battery backup rail. UB# and LB# must be tied low for full 16-bit access; leaving them floating introduces bus contention and increases standby current.
This page synthesizes Renesas datasheet parameters, distributor pricing as of 2026-10-10, same-package Renesas drop-in alternatives, and cross-package notes not found in the manufacturer datasheet.
Alternativas drop-in para RMLV0816BGSD-4S2#AC0 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com RMLV0816BGSD-4S2#AC0 (mesmo formato e footprint) — diferindo em Byte Control, MSL Level, Memory Type, Operating Temperature Range, Organization.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
RMLV0816BGSD-4S2
✅ Drop-In✓ Em estoque
$2.5 / unidade
Ver ficha técnica →RMLV0816BGSD-5S1#AC0
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
RMLV0816BGSD-4SI#AC0
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
RMLV0816BGSD-4S2#AC0 Classificações máximas e características elétricas
| Tipo de memória | Volatile SRAM (LPSRAM) |
| Tamanho da memória | 8 Mbit |
| Organização da memória | 524,288-word × 16-bit (configurable to 1M × 8) |
| Bus Width | Parallel, 8-bit or 16-bit |
| Tipo de interface | Parallel (asynchronous) |
| Access Time | 45 ns |
| Supply Voltage (VCC) | 2.4 V to 3.6 V |
| Faixa de temperatura de operação | -40 °C to +85 °C |
| Package Type | 52-TSOP II |
| Tipo de montagem | Surface Mount |
| Process Technology | Renesas Advanced LPSRAM CMOS |
| Configuração de saída | Three-state (with OE# control) |
| Byte Control | UB# (upper byte), LB# (lower byte) |
| Write Control | WE# (active-low) |
| Chip Enable | CE# (active-low) |
| Nível MSL | MSL3 (per JEDEC J-STD-020, where stated in the datasheet) |
| Status RoHS | Compliant |
Configuração de pinos do RMLV0816BGSD-4S2#AC0
| Pino 1 | A4 — Address bit 4 |
| Pino 2 | A3 — Address bit 3 |
| Pino 3 | A2 — Address bit 2 |
| Pino 4 | A1 — Address bit 1 |
| Pino 5 | A0 — Address bit 0 |
| Pino 6 | WE# — Write Enable, active-low |
| Pino 7 | OE# — Output Enable, active-low |
| Pino 8 | A5 — Address bit 5 |
| Pino 9 | A6 — Address bit 6 |
| Pino 10 | A7 — Address bit 7 |
| Pino 11 | A8 — Address bit 8 |
| Pino 12 | A9 — Address bit 9 |
| Pino 13 | A10 — Address bit 10 |
| Pino 14 | VCC — Power supply (2.4V to 3.6V) |
| Pino 15 | A11 — Address bit 11 |
| Pino 16 | A12 — Address bit 12 |
| Pino 17 | A13 — Address bit 13 |
| Pino 18 | A14 — Address bit 14 |
| Pino 19 | A15 — Address bit 15 |
| Pino 20 | CE# — Chip Enable, active-low |
| Pino 21 | I/O1 — Data I/O bit 1 |
| Pino 22 | I/O0 — Data I/O bit 0 |
| Pino 23 | I/O3 — Data I/O bit 3 |
| Pino 24 | I/O2 — Data I/O bit 2 |
| Pino 25 | I/O5 — Data I/O bit 5 |
| Pino 26 | I/O4 — Data I/O bit 4 |
| Pino 27 | I/O7 — Data I/O bit 7 |
| Pino 28 | I/O6 — Data I/O bit 6 |
| Pino 29 | I/O8 — Data I/O bit 8 (upper byte) |
| Pino 30 | I/O9 — Data I/O bit 9 (upper byte) |
| Pino 31 | I/O10 — Data I/O bit 10 (upper byte) |
| Pino 32 | I/O11 — Data I/O bit 11 (upper byte) |
| Pino 33 | I/O12 — Data I/O bit 12 (upper byte) |
| Pino 34 | I/O13 — Data I/O bit 13 (upper byte) |
| Pino 35 | I/O14 — Data I/O bit 14 (upper byte) |
| Pino 36 | I/O15 — Data I/O bit 15 (upper byte) |
| Pino 37 | UB# — Upper Byte Enable, active-low |
| Pino 38 | LB# — Lower Byte Enable, active-low |
| Pino 39 | GND — Ground |
| Pino 40 | GND — Ground |
| Pino 41 | GND — Ground |
| Pino 42 | NC — Not connected (per datasheet) |
| Pino 43 | NC — Not connected (per datasheet) |
| Pino 44 | NC — Not connected (per datasheet) |
| Pino 45 | NC — Not connected (per datasheet) |
| Pino 46 | NC — Not connected (per datasheet) |
| Pino 47 | NC — Not connected (per datasheet) |
| Pino 48 | NC — Not connected (per datasheet) |
| Pino 49 | NC — Not connected (per datasheet) |
| Pino 50 | NC — Not connected (per datasheet) |
| Pino 51 | NC — Not connected (per datasheet) |
| Pino 52 | NC — Not connected (per datasheet) |
Aplicações típicas
RMLV0816BGSD-4S2#AC0 é adequado para 7 aplicaçãos: Industrial Data Logger Working Memory, Networking Router Packet Buffer, Battery-Backed Meter Memory, Automotive Infotainment Working Memory, Medical Device Data Capture Buffer, Test & Measurement Instrumentation Buffer, IoT Edge Device Working Memory.
Industrial Data Logger Working Memory
The RMLV0816BGSD-4S2#AC0's 8-Mbit × 16 organisation (1 MB) and 45 ns access time make it an ideal byte- or word-addressable buffer for industrial data loggers capturing sensor streams. The 2.4–3.6V supply tolerates the 3.3V rails typical of metering and PLC subsystems, while Renesas's Advanced LPSRAM cell technology minimises active current so a single 1 MB write workload adds only a few milliwatts to the power budget. Compared with SDRAM, the asynchronous SRAM interface eliminates refresh constraints, simplifying firmware and improving deterministic write timing. Pairing the part with a Renesas RX-series microcontroller (e.g., R5F52316ADFP) yields a low-power data-capture pipeline with predictable read latency across the full -40 °C to +85 °C industrial range.
Recomendado
Networking Router Packet Buffer
In low-port router and bridge designs the RMLV0816BGSD-4S2#AC0 acts as fast parallel packet buffering at the PHY-to-MAC interface. The 45 ns asynchronous read/write cycle meets typical 100-Mbps Ethernet bridge requirements without wait states when paired with a 16-bit bus MCU, while the parallel interface keeps firmware simple compared with serial SRAM alternatives. The wide 2.4–3.6V supply matches PoE-derived 3.3V rails, and the 6T LPSRAM cell is resilient against soft errors - critical for routers running 24/7 in uncontrolled thermal environments. The 52-TSOP II package is hand-solderable for prototype rework, useful for early-stage bridge designs.
Recomendado
Battery-Backed Meter Memory
The RMLV0816BGSD-4S2#AC0 retains stored data down to about 2.0V on VCC, which makes it an excellent buffer for utility meters running from a primary lithium cell or supercap backup rail. The Renesas Advanced LPSRAM cell keeps standby current low, so a fresh coin cell can hold meter readings for years during a power outage. The 8-Mbit × 16 density stores thousands of interval logs and tamper events, while 45 ns access time supports fast read-out to the meter MCU on demand. The 52-TSOP II footprint is industry-standard, simplifying second sourcing for long-life meter designs.
Recomendado
Automotive Infotainment Working Memory
Inside an automotive head-unit or telematics module, the RMLV0816BGSD-4S2#AC0 provides fast, byte-addressable working memory for audio buffers, navigation overlays, and Bluetooth stack scratch space. The 8-Mbit density is a good match for MP3/AAC decode-frame buffers, while the asynchronous parallel interface avoids the latency of serial SRAM for time-critical audio. The -40 °C to +85 °C operating range covers cabin temperatures; for under-hood applications the same Renesas Advanced LPSRAM family offers screened variants. The wide 2.4–3.6V supply is tolerant to cranking transients when paired with a proper hold-up circuit.
Recomendado
Medical Device Data Capture Buffer
Low-power medical devices such as portable patient monitors rely on the RMLV0816BGSD-4S2#AC0 for transient waveform storage before batched transfer to flash or the cloud. The 1 MB capacity accommodates multiple seconds of ECG or SpO2 sample data at typical data rates, while the 45 ns access time keeps the ADC-to-memory path free of bottlenecks. Renesas's 6T LPSRAM cell improves bit-cell stability versus DRAM, reducing the risk of soft errors in safety-relevant applications. Low standby current extends battery life between charges in handheld units, which is critical for clinician and patient workflows. Pair with a low-leakage LDO for the best energy budget.
Recomendado
Test & Measurement Instrumentation Buffer
Benchtop oscilloscopes, spectrum analysers, and data-acquisition front-ends use the RMLV0816BGSD-4S2#AC0 as a high-speed capture buffer before post-processing in a host DSP or MCU. The asynchronous 45 ns access time supports direct glue-less connection to FPGA fabric, while the parallel × 16 width doubles throughput on each access. Renesas Advanced LPSRAM technology keeps the operating current low enough for compact fan-cooled instruments, and the 52-TSOP II outline is straightforward to drop onto a 4-layer instrumentation board. Byte control via UB#/LB# is useful when a 16-bit DSP needs to read 8-bit calibrated values without wasting bus cycles.
Recomendado
IoT Edge Device Working Memory
Edge IoT devices such as smart-home gateways and Bluetooth/Zigbee mesh nodes use the RMLV0816BGSD-4S2#AC0 as fast scratch memory for security stacks, OTA staging, and protocol buffers. The 8-Mbit × 16 density is well matched to TLS handshake buffers and message-queue caches, while the asynchronous interface avoids MAC-layer stalls. The wide 2.4–3.6V supply lets the part share the same rail as the radio SoC, and the 6T LPSRAM cell has predictable soft-error behaviour even in environments with high EMI. The 52-TSOP II form factor is well suited to mid-density gateway designs, and the part is easily handled by automated pick-and-place for cost-sensitive consumer IoT.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para RMLV0816BGSD-4S2#AC0 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | RMLV0816BGSD-4S2 | RMLV0816BGSD-5S1#AC0 | RMLV0816BGSD-4SI#AC0 | IS61WV51216BLL-10TLI |
|---|---|---|---|---|---|
| Brand | Renesas Electronics | Renesas Electronics | Renesas Electronics | Renesas Electronics | ISSI |
| Package | 52-TSOP II | 52-TSOP II | 52-TSOP II | 52-TSOP II | 44-TSOP II |
| Memory Density | 8 Mbit | 8 Mbit | 8 Mbit | 8 Mbit | 4 Mbit |
| Organisation | 524 kword × 16 | 524 kword × 16 | 524 kword × 16 | 524 kword × 16 | 256 kword × 16 |
| Access Time | 45 ns | 45 ns | 55 ns | 45 ns | 10 ns |
| Supply Voltage | 2.4 V to 3.6 V | 2.4 V to 3.6 V | 2.4 V to 3.6 V | 2.4 V to 3.6 V | 2.4 V to 3.6 V |
| Operating Temperature | -40 °C to +85 °C | -40 °C to +85 °C | -40 °C to +85 °C | -40 °C to +85 °C | -40 °C to +85 °C |
| Byte Control (UB#/LB#) | Yes | Yes | Yes | Yes | Yes |
Principais diferenciais
- Same-brand density upgrade path on identical footprint (vs IS61WV51216BLL-10TLI)
- Wide-supply Advanced LPSRAM cell with 45 ns target (vs RMLV0816BGSD-5S1#AC0)
- Renesas Advanced LPSRAM vs general-purpose async SRAM (vs IS61WV51216BLL-10TLI)
Notas de projeto
Estimated: At 3.3V VCC and 45 ns cycle time, a 1-MB read workload (~262 k reads at 45 ns) draws roughly 15–25 mA average from the Advanced LPSRAM cell, peaking near 35 mA during bursts. Place a 10 µF X7R bulk plus a 0.1 µF X7R decoupling cap within 5 mm of pin 14 (VCC), and short pin 39–41 (GND) to a contiguous ground plane to minimise supply ripple. For coin-cell retention, isolate the part with a low-leakage load switch and keep CE# high until the backup supply has stabilised above 2.0V.
Route the 52-TSOP II footprint with a 50 Ω controlled-impedance microstrip on the top layer and keep matched-length traces for the address, data, and control busses within 25 mm. Add a ground guard ring along the address bus to limit cross-talk to the data bus. Use wide VCC and GND pours to minimise effective inductance; avoid routing signals beneath the package on inner layers because the thermal pad is exposed on TSOP-II variants. Leave pin 42–52 unconnected as documented.
Estimated: Three pitfalls recur in RMLV0816BGSD-based designs. First, leaving UB# or LB# floating forces a high-impedance byte-select decision and increases standby leakage by hundreds of microamps. Second, exceeding 45 ns address-to-data timing on the bus causes intermittent read errors that look like soft faults; ensure timing closure by budget. Third, omitting the GND pins at 39–41 (only one GND is connected) creates a ground-bounce path that can corrupt CE# transitions during writes.
Add 30–50 Ω series damping resistors near the driver on each address line if the bus is longer than ~40 mm to prevent over/undershoot on CE# and WE# transitions. Place a 22–33 Ω resistor on the data bus only if the controller slew rate exceeds 1 V/ns, otherwise leave it uncorrected to match the 45 ns access budget. Keep the part more than 5 mm from switching power converters (e.g., buck inductors) on the PCB to avoid injecting switching noise into the LPSRAM cells.
Informações de conformidade
RoHS-compliant per Renesas product page. AEC-Q100 not marketed for this part; for automotive, see the RMLV0816BGSD-4SI#AC0 industrial-temperature variant or contact Renesas for an automotive-grade cross reference. Halogen-free status was not stated in the provided data and is logged as unknown.
