IRFS52N15DTRLP - 150V 51A N-Channel HEXFET MOSFET D2PAK
N.º da peça: IRFS52N15DTRLP ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $3.18 | $3,18 |
| 10 | $2.74 | $27,40 |
| 100 | $2.21 | $221,00 |
| 500 | $1.85 | $925,00 |
| 1.000 | $1.62 | $1.620,00 |
IRFS52N15DTRLP Visão geral
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to route or modulate high currents in power conversion circuits. As an N-channel enhancement-mode device, the IRFS52N15DTRLP conducts drain current when a positive gate-to-source voltage (VGS) is applied, and blocks current flow when VGS falls below the threshold. Within the broader taxonomy, this part sits at: power MOSFET -> discrete semiconductor -> power management component, and is a building block in SMPS, motor controllers, and Class D audio amplifiers.
Key features include a 60 A continuous drain current rating at 25 C, low gate charge for reduced switching losses, a fully characterized capacitance profile, and an avalanche-rated body diode for unclamped inductive switching. The D2PAK package provides a low thermal-resistance path from the die to the PCB drain tab, allowing high currents to be handled without external heatsinks in many surface-mount designs.
The device is built on Infineon's planar HEXFET process, which optimizes the trade-off between on-resistance, switching speed, and avalanche ruggedness. Its low gate-to-drain charge (Qgd) reduces the Miller plateau region, enabling faster switching transitions and lower drive losses in high-frequency topologies such as forward converters, half-bridge stages, and synchronous rectifiers in telecom and server power supplies.
Typical applications include high-current DC-DC converters (48 V to 12 V buck and 12 V to 1 V buck for server VRMs), uninterruptible power supplies (UPS) and battery protection, plasma display panel drivers, automotive relay replacement, and high-current synchronous rectification where the D2PAK footprint is preferred for PCB-side cooling.
When designing with the IRFS52N15DTRLP, place it on a minimum 1 square inch of copper pour on the D2PAK tab to dissipate 230 W at TC = 25 C, and ensure the VGS drive reaches at least 10 V for full Rds(on) saturation. Always derate drain current to roughly half the 25 C rating once the case reaches 100 C, and add a gate-source Zener clamp for transient robustness in motor-drive environments.
This page synthesizes distributor pricing, drop-in D2PAK alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternativas drop-in para IRFS52N15DTRLP — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IRFS52N15DTRLP (mesmo formato e footprint) — diferindo em Technology, Package, FET Type, Gate Threshold Voltage (VGS(th)), MSL Level.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRFS52N15DPBF
✅ Drop-In✓ Em estoque
$2.15 / unidade
Ver ficha técnica →IRFB52N15DPBF
✅ Drop-In✓ Em estoque
$1.65 / unidade
Ver ficha técnica →VBL1154N
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFS4321TRLPBF
✅ Drop-In✓ Em estoque
$1.73 / unidade
Ver ficha técnica →FQB45N15V2TM
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFS52N15DTRLP Classificações máximas e características elétricas
| FET Type | N-Channel MOSFET |
| Technology | HEXFET (Planar) |
| Drain-to-Source Voltage (Vdss) | 150 V |
| Continuous Drain Current (Id) @ TC = 25 C | 51 A (Tc) |
| Continuous Drain Current (Id) @ TC = 100 C | 36 A (Tc, estimated) |
| Continuous Drain Current (Id) @ TA = 25 C | 60 A (Ta, datasheet) |
| On-Resistance Rds(on) max @ VGS = 10 V | 32 mOhm |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical 3 V) |
| Power Dissipation (Pd) @ TC = 25 C | 230 W (Tc) |
| Power Dissipation (Pd) @ TA = 25 C | 3.8 W (Ta) |
| Faixa de temperatura de operação | -55 C to +175 C (junction) |
| Encapsulamento | D2PAK (TO-263) surface mount |
| Tipo de montagem | Surface Mount |
| Contagem de pinos | 3 (Gate, Drain, Source) + tab |
| Status RoHS | Compliant |
| Lead-Free Finish | Yes (matte tin) |
| Nível MSL | 1 (per JEDEC J-STD-020, typical for D2PAK) |
Configuração de pinos do IRFS52N15DTRLP
| Pino 1 | Gate — Gate drive input - apply VGS = 10 V to fully enhance |
| Pino 2 | Drain — Power drain - internally bonded to the metal tab |
| Pino 3 | Source — Power source return |
| Pino Tab | Drain — Metal tab - electrically tied to pin 2 (Drain), serves as primary thermal path to PCB copper |
Área de Operação Segura - IRFS52N15DTRLP
Aplicações típicas
IRFS52N15DTRLP é adequado para 7 aplicaçãos: High-Current DC-DC Converters, Synchronous Rectification in SMPS, Industrial Motor Drives, Uninterruptible Power Supplies (UPS) and Battery Protection, Plasma Display Panel (PDP) Drivers, Automotive Relay Replacement, Class D Audio Amplifier Output Stage.
High-Current DC-DC Converters
The IRFS52N15DTRLP suits 48 V to 12 V buck converters and 24 V to 5 V high-current rails thanks to its 150 V Vdss headroom and 51 A TC-rated drain current. Its 32 mOhm Rds(on) keeps conduction losses under 6 W at 40 A load, while the D2PAK tab spreads heat across the PCB copper for compact surface-mount designs. Compared to a smaller DPAK MOSFET, the D2PAK thermal pad keeps Tj below 100 C without forced airflow. In a typical 300 kHz forward converter the part handles continuous drain currents of 30 to 35 A with 90 percent efficiency. The fully characterized capacitance profile also simplifies gate-drive timing and dead-time optimization for hard-switched topologies.
Recomendado
Synchronous Rectification in SMPS
On the secondary side of isolated SMPS topologies, the IRFS52N15DTRLP serves as a synchronous rectifier where its 32 mOhm Rds(on) directly competes with diode forward drops of 0.7 V to reduce conduction loss. The 150 V Vdss rating handles the reflected voltage stress of 24 V and 48 V primary designs with adequate margin. Low gate charge (Qg per datasheet family) reduces drive losses at switching frequencies of 100 to 500 kHz, allowing higher power density in server and telecom rectifiers. The D2PAK footprint supports the high peak currents typical of self-driven SR topologies without saturating the die.
Recomendado
Industrial Motor Drives
The IRFS52N15DTRLP is used in 48 V to 100 V brushed and brushless DC motor drives where its 150 V Vdss and 230 W power dissipation handle the back-EMF transients of inductive loads. The HEXFET process provides avalanche-rated ruggedness for unclamped motor demagnetization events, and the D2PAK package allows PCB-side cooling in space-constrained industrial cabinets. Gate-to-source Zener protection plus the device's wide VGS(th) tolerance simplify rugged low-side switch designs. With 32 mOhm Rds(on), a single IRFS52N15DTRLP can drive a 30 A continuous motor load with proper heatsinking.
Recomendado
Uninterruptible Power Supplies (UPS) and Battery Protection
In UPS battery-disconnect and protection circuits, the IRFS52N15DTRLP acts as a low-side disconnect switch that interrupts battery current during fault conditions. Its 51 A TC rating covers 1 kW to 1.5 kW UPS battery rails, and the 150 V Vdss safely handles 48 V battery stacks with transient headroom. The HEXFET body diode is avalanche-rated, allowing safe commutation of the battery's stored energy. Surface-mount D2PAK packaging reduces assembly cost compared to TO-220 through-hole equivalents in modern UPS designs.
Recomendado
Plasma Display Panel (PDP) Drivers
The IRFS52N15DTRLP was originally designed for plasma display panel sustain and address driver stages, where its 150 V Vdss and fast switching suit the high-voltage, high-frequency scan waveforms. The low Qgd reduces the Miller plateau losses during the rapid PDP switching transitions, while the 51 A current rating handles peak scan currents. The D2PAK footprint mounts on the PDP chassis heat-spreader, allowing dense driver layouts. Modern PDP designs are migrating to OLED, but the IRFS52N15DTRLP remains in legacy repair and industrial high-voltage pulser applications.
Recomendado
Automotive Relay Replacement
As an electromechanical relay replacement in 12 V and 24 V automotive subsystems, the IRFS52N15DTRLP provides silent, long-life switching with 32 mOhm Rds(on) carrying 30 A continuous loads. The 150 V Vdss safely clamps 24 V load-dump transients up to the ISO 7637-2 worst-case pulse. The D2PAK footprint is compatible with AEC-Q layout guidelines when paired with proper gate protection, although this specific part number is not AEC-Q100 qualified - automotive safety-critical designs should select the AEC-Q100 automotive-grade equivalent instead. Useful for body controllers, headlamp drivers, and HVAC blower switches.
Recomendado
Class D Audio Amplifier Output Stage
In Class D audio amplifiers, the IRFS52N15DTRLP serves as the high-current half-bridge switch for subwoofer and PA amplifier outputs. The 150 V Vdss covers +/- 50 V audio rails in 200 W to 500 W amplifiers, and the 32 mOhm Rds(on) keeps idle losses below 1 percent. The HEXFET process minimizes body-diode recovery losses that would otherwise inject distortion into the audio output. The D2PAK footprint mounts directly to the amplifier's metal chassis or heat-spreader, supporting the 50 to 100 W continuous dissipation typical of pro-audio applications.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRFS52N15DTRLP — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRFS52N15DPBF | IRFB52N15DPBF | VBL1154N | IRFS4321 | FQB45N15V2TM |
|---|---|---|---|---|---|---|
| Package | D2PAK (TO-263) - surface mount | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vanguard Electronics | Infineon Technologies | onsemi |
| Drain-to-Source Voltage (Vdss) | 150 V | 150 V | 150 V | 150 V | 60 V | 150 V |
| Technology | HEXFET (Planar) | HEXFET (Planar) | HEXFET (Planar) | Trench MOSFET | HEXFET (Planar) | QFET |
| Mounting Type | Surface Mount | Surface Mount | Through-Hole (TO-220) | Surface Mount | Surface Mount | Surface Mount |
Principais diferenciais
- Tape-and-reel packaging optimized for high-volume SMT assembly (vs IRFS52N15DPBF)
- Same die family available in through-hole TO-220 variant (vs IRFB52N15DPBF)
- Vanguard VBL1154N provides Chinese-designed drop-in alternative (vs VBL1154N)
- IRFS4321 offers higher current at lower voltage (vs IRFS4321)
Notas de projeto
Estimated: at Id = 40 A and Rds(on) = 32 mOhm, conduction loss is approximately 40 A^2 * 0.032 ohm = 51 W. With the D2PAK thermal pad on 1 square inch of 2 oz copper (RthJA approximately 40 C/W), junction temperature rises 51 W * 40 C/W = 2040 C above ambient, which exceeds the 175 C rating. Designers must either reduce the operating current, increase the copper area to 4+ square inches, add forced airflow, or parallel multiple IRFS52N15DTRLP devices. For continuous operation above 30 A, a dedicated heatsink bonded to the D2PAK tab is recommended.
Use a minimum 1 square inch of 2 oz copper on the drain tab for thermal spreading; the D2PAK tab is internally bonded to pin 2 (Drain), so any thermal vias must be electrically isolated from the drain plane or treated as live circuits. Place a 100 nF ceramic bypass capacitor directly between the gate and source pins (within 5 mm) to suppress VGS ringing from the Miller effect. Use a 10 ohm gate resistor to dampen parasitic oscillations in the gate-drive loop, and route the gate trace away from the drain switching node to minimize dv/dt coupling.
Keep the source-pad return path (pin 3) physically short and wide to minimize parasitic source inductance, which can otherwise reduce effective VGS during fast switching transitions and increase switching losses. Place the gate-drive IC immediately adjacent to the gate pin to minimize loop inductance. For high-side switching, use a bootstrap or isolated gate driver such as IR2114STRPBF to lift the gate drive above the source potential. Avoid running sensitive analog signals across the drain switching node to prevent capacitive coupling.
Do not exceed VGS = 20 V absolute maximum - use a 16 V Zener clamp between gate and source if the gate driver is powered from a higher rail. Avoid operating in the linear region with high VDS for sustained periods, as the SOA curve drops to approximately 1.5 A at 150 V DC. The IRFS52N15DTRLP is not AEC-Q100 qualified - for automotive safety-critical designs use the BTS118DATMA1 or other qualified alternative. Always verify avalanche rating before switching inductive loads, and add a freewheeling diode if the body diode's reverse recovery is insufficient.
Informações de conformidade
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified - automotive safety-critical applications should use AEC-Q100 qualified alternatives such as BTS118DATMA1. Halogen-free matte-tin finish per Infineon datasheet.
