STD20N60DM2 - 600V 20A N-Channel MDmesh DM2 MOSFET | STMicroelectronics
N.º da peça: STD20N60DM2 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.35 | $135,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $1.05 | $1.050,00 |
STD20N60DM2 Visão geral
What is a Power MOSFET? A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of high power levels. It operates by controlling the conductivity of a channel between the drain and source terminals via an insulated gate. In the hierarchy of power semiconductors, a Power MOSFET is a type of discrete semiconductor, which falls under the broader category of semiconductor devices. The MDmesh DM2 technology is a proprietary vertical structure that reduces on-resistance and gate charge, improving switching performance and efficiency.
Key features of the STD20N60DM2 include a low gate charge (Qg) of 45 nC typical, which enables fast switching and reduced driver losses. The device also offers a wide operating junction temperature range from -55°C to +150°C, making it suitable for demanding environments. Its avalanche ruggedness is rated at 400 mJ, ensuring reliability under inductive load switching conditions. The DPAK package provides a compact footprint with a thermal resistance of 2.5°C/W (junction-to-case), facilitating heat dissipation.
Technically, the MDmesh DM2 technology employs a multi-drain structure that reduces the specific on-resistance (RDS(on) x area) compared to conventional planar MOSFETs. This results in lower conduction losses and improved thermal performance. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. Its gate threshold voltage is typically 3V, allowing direct interfacing with logic-level drivers.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and DC-DC converters. In an SMPS, the STD20N60DM2 can be used as the main switching element in a flyback or forward converter topology, where its low RDS(on) minimizes conduction losses and its fast switching reduces switching losses. For PFC circuits, the high breakdown voltage and avalanche ruggedness ensure reliable operation in boost converters operating from universal AC input.
When designing with this device, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Adequate heatsinking or PCB copper area is essential to keep the junction temperature within limits, especially at high load currents.
Alternativas drop-in para STD20N60DM2 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
STD20N60M2
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
IPD60R360P7
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
STD20N60DM2 Classificações máximas e características elétricas
| Polarity | N-Channel |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 20 A |
| Continuous Drain Current (ID) at 100°C | 12.6 A |
| Pulsed Drain Current (IDM) | 60 A |
| Drain-Source On-Resistance (RDS(on)) | 0.19 ohm (typical), 0.23 ohm (max) |
| Gate-Source Threshold Voltage (VGS(th)) | 3 V (typical), 4.5 V (max) |
| Gate Charge (Qg) | 45 nC (typical) |
| Input Capacitance (Ciss) | 1100 pF (typical) |
| Output Capacitance (Coss) | 90 pF (typical) |
| Reverse Transfer Capacitance (Crss) | 5 pF (typical) |
| Avalanche Energy (EAS) | 400 mJ |
| Faixa de temperatura de junção de operação | -55°C to +150°C |
| Encapsulamento | DPAK (TO-252) |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant |
| Livre de halogênio | Yes |
Configuração de pinos do STD20N60DM2
| Pino 1 | Gate (G) — Gate terminal for controlling the MOSFET |
| Pino 2 | Drain (D) — Drain terminal, also connected to the tab |
| Pino 3 | Source (S) — Source terminal |
Área de Operação Segura (DC)
Aplicações típicas
STD20N60DM2 é adequado para 6 aplicaçãos: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, DC-DC Converters, Solar Inverters, Motor Drives.
Switch-Mode Power Supplies (SMPS)
The STD20N60DM2 is ideal for SMPS due to its high breakdown voltage (600V) and low on-resistance (0.19 ohm). In a flyback converter, it can switch at frequencies up to 100 kHz with reduced losses. The low gate charge (45 nC) simplifies gate drive design, and the avalanche ruggedness (400 mJ) ensures reliability during load transients. Compared to older MOSFETs, the MDmesh DM2 technology reduces conduction and switching losses, improving overall efficiency by up to 2%. For a 100W SMPS, the device can handle the primary-side switching with a heatsink or adequate PCB copper area. The DPAK package allows compact designs, and the wide operating temperature range (-55°C to +150°C) supports industrial environments.
Recomendado
Power Factor Correction (PFC)
In PFC circuits, the STD20N60DM2 operates as a boost switch in continuous conduction mode (CCM). Its 600V breakdown voltage provides ample margin for the boosted output voltage (typically 400V). The low RDS(on) minimizes conduction losses, and the fast switching reduces switching losses, enabling high efficiency (>95%). The device's avalanche energy rating (400 mJ) ensures it can withstand voltage spikes during turn-off. The gate charge of 45 nC allows direct driving from PFC controllers like the L6563 without additional buffer stages. The DPAK package is suitable for surface-mount assembly, and the thermal resistance of 2.5°C/W (junction-to-case) allows efficient heat transfer to the PCB. For a 300W PFC stage, the device operates well within its SOA, with junction temperature rise kept below 50°C with proper heatsinking.
Recomendado
LED Lighting Drivers
The STD20N60DM2 is well-suited for LED drivers, particularly in offline applications. Its 600V rating allows direct connection to rectified AC mains (up to 265VAC). The low on-resistance reduces power dissipation, improving driver efficiency and reducing the need for large heatsinks. The device can be used in single-stage PFC flyback topologies, where its fast switching and low gate charge enable high-frequency operation (up to 150 kHz), reducing transformer size. The avalanche ruggedness ensures reliability during line transients. For a 50W LED driver, the device operates at a junction temperature of around 100°C with a small heatsink, well within its 150°C maximum. The DPAK package is compatible with automated assembly, and the RoHS compliance meets environmental standards.
Recomendado
DC-DC Converters
In DC-DC converters, the STD20N60DM2 can be used in isolated topologies like forward or push-pull converters. Its 600V breakdown voltage is suitable for input voltages up to 400V from a PFC stage. The low RDS(on) and gate charge enable high-frequency operation (up to 200 kHz), allowing smaller magnetic components. The device's fast body diode (with low reverse recovery charge) reduces losses in the freewheeling path. For a 200W DC-DC converter, the device can achieve efficiencies above 93%. The DPAK package is easy to mount, and the thermal performance is adequate with proper PCB layout. The wide operating temperature range makes it suitable for telecom and industrial applications.
Recomendado
Solar Inverters
The STD20N60DM2 is used in solar microinverters and string inverters for DC-AC conversion. Its 600V rating is suitable for PV panel voltages up to 500V. The low on-resistance minimizes conduction losses, improving the overall efficiency of the inverter. The device can be used in boost converters to step up the PV voltage to a DC bus, and in H-bridge inverters for AC output. The avalanche ruggedness ensures reliability during grid disturbances. For a 500W microinverter, the device operates at moderate temperatures with a heatsink. The DPAK package allows compact designs, and the RoHS compliance is essential for global markets.
Recomendado
Motor Drives
In motor drives, the STD20N60DM2 can be used in the inverter stage for variable frequency drives (VFDs). Its 600V rating is suitable for 230VAC or 400VAC motor drives. The low RDS(on) reduces conduction losses, and the fast switching enables PWM frequencies up to 20 kHz, reducing audible noise. The device's avalanche ruggedness is important for handling inductive loads during switching. For a 1kW motor drive, the device can be used in a three-phase inverter with proper heatsinking. The DPAK package is suitable for surface-mount assembly, and the wide operating temperature range supports industrial environments.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para STD20N60DM2 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | STD20N60M2 | IPD60R360P7 | STF20N60DM2 |
|---|---|---|---|---|
| Package | DPAK (TO-252) | DPAK (TO-252) - same | DPAK (TO-252) - same | TO-220FP - different |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | STMicroelectronics |
| Drain-Source Breakdown Voltage | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (25°C) | 20 A | 20 A | 20 A | 20 A |
| On-Resistance (RDS(on)) | 0.19 ohm (typ) | 0.23 ohm (typ) | 0.36 ohm (typ) | 0.19 ohm (typ) |
| Gate Charge (Qg) | 45 nC | 60 nC | 38 nC | 45 nC |
| Avalanche Energy (EAS) | 400 mJ | 350 mJ | 300 mJ | 400 mJ |
| Operating Temperature Range | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
Principais diferenciais
- Lower on-resistance compared to older MDmesh M2 (vs STD20N60M2)
- Lower gate charge for faster switching (vs STD20N60M2)
- Higher avalanche energy rating (vs IPD60R360P7)
Notas de projeto
The STD20N60DM2 has a junction-to-case thermal resistance of 2.5°C/W. For a typical SMPS application with 20W dissipation, the junction temperature rise is 50°C above case temperature. Ensure adequate heatsinking or PCB copper area to keep the junction temperature below 150°C. A minimum of 1 square inch of copper on the drain pad is recommended for moderate power levels.
Place the gate driver as close to the gate pin as possible to minimize parasitic inductance. Use a gate resistor (typically 10-20 ohm) to control switching speed and reduce EMI. The source pin should have a low-inductance path to the controller ground. For high-frequency operation, use a Kelvin source connection if available to reduce gate drive loop inductance.
Do not exceed the maximum gate-source voltage of ±30V. Ensure the gate drive voltage is at least 10V to fully enhance the channel and achieve the specified RDS(on). Be aware of the body diode's reverse recovery characteristics; in bridge topologies, consider using an external fast-recovery diode if needed. Always verify the SOA during startup and fault conditions.
Informações de conformidade
RoHS compliant and halogen-free per STMicroelectronics datasheet. Not AEC-Q100 qualified; for automotive, consider AEC-Q101 qualified parts.
